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http://dx.doi.org/10.5515/KJKIEES.2017.28.1.1

ETRI 0.25μm GaN MMIC Process and X-Band Power Amplifier MMIC  

Lee, Sang-Heung (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Kim, Seong-Il (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Ahn, Ho-Kyun (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Lee, Jong-Min (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Kang, Dong-Min (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Kim, Dong Yung (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Kim, Haecheon (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Min, Byoung-Gue (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Yoon, Hyung Sup (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Cho, Kyu Jun (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Jang, Yoo Jin (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Lee, Ki Jun (Department of Electronics Engineering, Chungnam National University)
Lim, Jong-Won (RF Convergence Components Research Section, Electronics and Telecommunications Research Institute)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.28, no.1, 2017 , pp. 1-9 More about this Journal
Abstract
In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.
Keywords
GaN HEMT; X-Band; Power Amplifier; MMIC;
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