• Journal of the Semiconductor & Display Technology
• /
• v.19 no.3
• /
• pp.43-48
• /
• 2020

The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.1
• /
• pp.55-60
• /
• 2020

This study designed High impedance filter to reduce RF loss to heater heating wire and increase RF current flowing to heater ground wire. Effects such as D / R improvement and process reproducibility could be seen. In addition, RF parameter distribution optimization was possible by understanding the RF path of PE-CVD equipment using Plasma and designing filter.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.2
• /
• pp.6-10
• /
• 2016

In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.68 no.2
• /
• pp.304-309
• /
• 2019

This paper presents a CMOS RF-to-DC converter for video surveillance disposable IoT applications. It widely harvests RF energy of 3G/4G cellular low-band frequency range by employing a tunable impedance matching network. The proposed converter consists of the differential-drive cross-coupled rectifier and the matching network with a 4-bit capacitor array. The proposed converter is designed using 130-nm standard CMOS process. The designed energy harvester can rectify the RF signals from 700 MHz to 900 MHz. It has a peak RF-to-DC conversion efficiency of 72.25%, 64.97%, and 66.28% at 700 MHz, 800 MHz, and 900 MHz with a load resistance of 10kΩ, respectively.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.27 no.3
• /
• pp.217-223
• /
• 2007

This paper introduces an active sensing node using radio-frequency (RF) telemetry. This device has brought the traditional impedance-based structural health monitoring (SHM) technique to a new paradigm. The RF active sensing node consists of a miniaturized impedance measuring device (AD5933), a microcontroller (ATmega128L), and a radio frequency (RF) transmitter (XBee). A macro-fiber composite (MFC) patch interrogates a host structure by using a self-sensing technique of the miniaturized impedance measuring device. All the process including structural interrogation, data acquisition, signal processing, and damage diagnostic is being performed at the sensor location by the microcontroller. The RF transmitter is used to communicate the current status of the host structure. The feasibility of the proposed SHM strategy is verified through an experimental study inspecting loose bolts in a bolt-jointed aluminum structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.6
• /
• pp.886-892
• /
• 2000

In this paper, surface transfer impedance measurement of RF cables according to IEC(International Electrotechnical Commission) Standard 96-1 is described and surface transfer impedance of a commercial RF cable is obtained from the measured voltage and scattering parameter with a triaxial fixture fabricated in the operating frequency range from 1 MHz to 30 MHz.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.35 no.12
• /
• pp.560-566
• /
• 1986

In the design of an RF discharge system, the electrical equivalence of the gas discharge must be known. With this knowledge, one can design a suitable matching network for a maximum power transfer from the RF generator into the discharge. For this purpose, an experiment has been conducted in which the electrical impedance (conductance and capacitance) was determined as a function of power. In parallel with this, a detailed theoretical analysis has been done and the results are in accord with those of our experiment. Design equations are also given for a simple matching network, and a design example is presented to demonstrate its application. During the actual operation of an RF discharge system, however, it has been often observed that the reflected power tends to vary in small values due to the changes in the impedance of the system. This problem can be relieved by adding an automatic impedance matching circuit to the system and this paper presents such an automatic impedance matching network.

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.4
• /
• pp.13-17
• /
• 2003

An adaptor is designed for chamber impedance measurement of plasma process. Copper rod, fixed board and compensation circuit are the major components of the adaptor. An adaptor can be to measure chamber impedance on time unless stopping a process and Data to measure can do the database. We can use it to a criteria data for a failure diagnosis. So developed adaptor could be used for diagnosis the plasma process chamber in semiconductor industry.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.32 no.3A
• /
• pp.319-323
• /
• 2007

In this paper, the automatic precision measurement of RF voltage has been done using the power and impedance standards [1] in the frequency range of 50 to 1000 MHz. A coaxial microcalorimeter and an automatic network analyzer were used for the determination of the RF-DC differences and the total uncertainty is about 1.0 %. A HP computer, a commodore computer and IEEE-488 interface bus were used for measuring the effective efficiency of thermistor mount and the RF-DC difference of thermal voltage converter, All processes of measurement were accomplished by self-developed program automatically.

• Journal of Advanced Marine Engineering and Technology
• /
• v.32 no.8
• /
• pp.1248-1256
• /
• 2008

In this paper, basic characteristics of transmission line employing PPGM (periodically perforated ground metal) were investigated using theoretical and experimental analysis.According to the results, unlike the conventional PBG (photonic band gap) structures, the characteristic impedance of the transmission line employing PPGM structure showed a real value, which exhibited a very small dependency on frequency. The transmission line employing PPGM structure showed a loss (per quarter wave length) higher by $0.1{\sim}0.2\;dB$ than the conventional microstrip line. According to the investigation of the dependency of RF characteristic on ground condition, the RF characteristic of the transmission line employing PPGM structure was hardly affected by the ground condition in the frequency lower than Ku band, but fairly affected in the frequency higher than Ku band, which indicated that coplanar waveguide employing PPGM structure was optimal for RF characteristic and reduction of size. Considering above results, impedance transformer was developed using coplanar waveguide with PPGM structure for the first time, and good RF characteristics were observed from the impedance transformer. In case that {\lambda}/4$ impedance transformer with a center frequency of 9 GHz was fabricated for a impedance transformation from 20 to10 {\Omega}$, the line width and length were 20 and $500\;{\mu}m$, respectively, and its size was only 0.64 % of the impedance transformer fabricated with conventional microstrip lines. Above results indicate that the transmission line employing PPGM is a promising candidate for a development of matching and passive elements on MMIC.