• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.248-251
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• 2000

본 논문에서는 SIEMENS사의 BAS125 소자의 I-V curve에서 RF신호를 고려하여 파라미터를 추출하였으며, 바이어스에 독립적인 외부소자를 추출하고, 바이어스에 종속적인 접합캐패시터를 S-parameter를 fitting하여 추출하였다.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2300-2302
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• 2005

Metal-Semiconductor-Metal type photodetector was fabricated with AlGaAs/InGaAs Quantum Well FET structures using simplified processing steps. The DC and RF responses were measured by 850nm wavelength injection laser. A DC responsivity in the quasisaturated regime was 0.45 A/W in CW measurements, and a bandwidth measured using a 850nm 40 ps pulsed laser was 16GHz. An electrical equivalent circuit model was extracted from measured S-parameter.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.208-213
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• 2003

In this paper, we have designed the duplexer using non-radiative dielectric (NRD) guide in millimeter band. The designed duplexer is composed of two stepped-impedance filters and T-junction. Stepped-impedance filters are designed with an equivalent circuit model of evanescent waveguide and the T-junction is optimized to minimize return loss. The characteristics of duplexer shows a good agreement with the expected results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.349-354
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• 2004

As a transmitter sub-assembly in the XFP(10 Gb/s Small Form Factor Pluggable) transceiver module, a transmitter optical sub-assembly(TOSA) is designed, fabricated and characterized in view of electrical and thermal performances. For a low-cost and compact packaging TOSA, the bias-tee and the matching resistor are monolithically integrated on the AlN sub-mount and a newly designed coplanar waveguide is drawn in the TO-stem. All optoelectronic components packaged in the TOSA are modeled by the equivalent circuit, which helps to improve and characterize the TOSA performance. The fabricated TOSA shows the -3㏈ bandwidth as high as 11 GHz at an elevated temperature of 85$^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.104-109
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• 2012

In this paper, we propose a way to improve the quality of L-band wireless communication from unfriendly influential factors lying in the neighboring RF bands. The UHF-band system has resonator components and they generate harmonics as the spurious in the L-band. Therefore, a metamaterial CRLH bandpass filter is designed for the purpose of system miniaturization and smaller insertion loss, and its spurious phenomenon is observed in the frequency domain. And its harmonics in the L-band are suppressed by a compact bandstop filter whose equivalent circuit is newly developed. The design methodology is validated by the equivalent circuit to be compared with commercial full-wave EM software simulations, where the spurious is dropped by 20dB. Also, the advantage of the proposed design is presented by the comparison where our filter is much smaller than the conventional parallel edge coupled filter by over 50%, with excellent harmonic suppression.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.158-162
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• 1995

We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV$\_$CEO/ of 10 V, fT of 30 GHz and f$\_$max/ of 17 GHz for device with 6x14$\mu\textrm{m}$$^2$emitter size. To extract accurate equivalent parameters, the De-embedded method was applied for extraction of parasitic parameters and the calculation of circuit equations for intrinsic parameters. Based on the Load-pull method, power characteristics was simulated and measured to get the maximum output power of the device.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.124-130
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• 2005

In this paper, we designed a cylindrical type light source having an electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the transformer principle, an electrically equivalent circuit cylindrical type light source was analyzed. According to the parameters of electromagnetic induction, which were diameter of coil with cpO.3$\~$ 1.2mm, number of turns with 4$\~$ 12 turns, distance with 40$\~$ l20mm and RF power with 10$\~$ 150W, the electrical .md optical properties were measured. When the diameter of the coil was cp0.3mm, number of turns was 8 and distance was 40mm, and the maximum brightness of 29,730 cd/m$^{2}$ was shown with RF power l50W. The relationship between electromagnetic induction and plasma discharges was demonstrated using the mode transition from E-mode to H-mode

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.54-61
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• 1997

An accurate extraction technique is developed to determine full euqivalent circuit parameters of Si MOSFETs using 1 set of measured S-parametes without complicated optimization process. This technique is based on the use of anlytic Z-parameters experessions for resistances and inductances and the Y-parameter ones for ntrinsic parameters. This accuracy is proved over the wide range of gate voltage by observing good agreement between measured and fitted Z-parameter equations and frequency-independent response of the extracted intrinsic parameters. Using this technique, gate voltage-dependencies of model parameters are obained in the saturation region and these results show the similar behavior to the short-channel effects expected from the device theory.