• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.133-133
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• 2002

• Journal of the Korea Institute of Military Science and Technology
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• v.24 no.3
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• pp.317-327
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• 2021

Low Frequency Active Sonobuoy(hereinafter referred to as LFAS) are being developed in Korea in consideration of compatibility with existing overseas sonobuoys, and a communication device for acoustic signals receiving and operating control of LFAS has been developed. The communication device needs to verify compatibility with the existing Sonobuoy, and for this purpose, the standardized Sonobuoy communication protocol was applied. The communication device is designed/manufactured to transmit the acoustic signal received in real time from the Sonobuoy through VHF band RF communication to the data processing device, and transmit CFS/CSG commands for operation control to the Sonobuoy through UHF band RF communication. In order to verify the manufactured communication device, the communication status and performance were verified by interlocking test through Ultra Electronics' PASS-II equipment and domestically developed electronic device of Sonobuoy. In addition, operability was verified through environmental tests, water tanks, and marine operations. In the future, the communication device of sonobuoy can be used for verification of the Sonobuoy developed in Korea.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.308-314
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• 2005

The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.3
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• pp.302-311
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• 2014

In this work, a FTTL (fishbone-type transmission line) structure was fabricated on PES (polyether sulfone) for a realization of transparent flexible wireless communication device, and its RF characteristics were investigated. According to the results, the FTTL on PES showed a short wavelength characteristic compared with conventional coplanar waveguide. Concretely, the wavelength of the FTTL was 2.23 mm at 50 GHz, which was 56.6 % of the conventional coplanar waveguide. According to the bandwidth extraction result, the passband of the FTTL on PES was 608 GHz. Unlike conventional periodic structures, the characteristic impedance of the FTTL on PES showed a very low frequency dependency, which means that the FTTL on PES can be used for application to transmission line and distributed passive components with a broadband operation frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.416-423
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• 2012

Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.

• The Magazine of the IEIE
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• v.29 no.9
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• pp.1020-1020
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• 2002

Wireless communication systems will be one of the biggest drivers of semiconductor products over the next decade. Global Positioning System (GPS) and Blue-tooth, HomeRF, and Wireless-LNA system are just a few of RF-module candidate awaiting integration into next generation mobile phone. Motivated by the growing needs for low-cost and multi-band/multi-function single chip wireless transceivers, CMOS technology has been recognized as a most promising candidate for the implementation of the future wireless communication systems. This paper presents recent developments in RF CMOS technology, which is classified into device technology and circuit technology and from them forecasts technology trends in the near future.

• The Magazine of the IEIE
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• v.29 no.9
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• pp.18-30
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• 2002

Wireless communication systems will be one of the biggest drivers of semiconductor products over the next decade. Global Positioning System (GPS) and Blue-tooth, HomeRF, and Wireless-LNA system are just a few of RF-module candidate awaiting integration into next generation mobile phone. Motivated by the generation mobile phone. Motivated by the growing needs for low-cost and multi-band/multi-function single chip wireless transceivers, CMOS technology has been recognized as a most promising candidate for the implementation of the future wireless communication systems. This paper presents recent developments in RF CMOS technology, which is classified into device technology and circuit technology and from them forecasts technology and from them forecasts technology trends in the near future.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.62-69
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• 1998

The general degradation model has been applied to analyze the hot carrier induced degradation of the DC and RF characteristics of RF-nMOSFET. The degradation of cut-off frequency has been severer than the degradation of bulk MOSFET drain current. The value of the degradation rate n and the degradation parameter m for RF-nMOSFET has been equal to those for bulk MOSFET. The decrease of device degradation with the increase of fingers could be explained by the large source/drain parasitic resistance and drain saturation voltage. It has been also found that the RF performance degradation could be explained by the decrease of $g_{m}$ and $C_{gd}$ and the increase of $g_{ds}$ after stress. The degradation of the DC and RF characteristics of RF-nMOSFET could be predicted by the measurement of the substrate current.t.