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http://dx.doi.org/10.6109/jkiice.2012.16.3.416

Design of Multilayer LPF and RF diode switch for GSM  

Choi, U-Sung (원광대학교 공과대학 전기정보통신공학부)
Yang, Sung-Hyun (광운대학교 전자공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.3, 2012 , pp. 416-423 More about this Journal
Abstract
Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.
Keywords
GSM; Multilayer; LPF; RF diode switch;
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