• Title/Summary/Keyword: RF contact

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The Design and Modeling of a Reconfigurable Inset-Fed Microstrip Patch High Gain Antenna for Wireless Sensor Networks

  • Phan, Duy-Thach;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.20 no.3
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    • pp.145-150
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    • 2011
  • In this paper, we designed a tunable microstrip patch antenna using RF MEMS switches. The design and simulation of the antenna were performed using a high frequency structure simulator(HFSS). The antenna was designed for use in the ISM band and either operates at 2.4 GHz or 5.7 GHz achieving -10 dB return-loss bandwidths of 20 MHz and 180 MHz, respectively. In order to obtain high efficiency and improve the ease of integration, a high resistivity silicon(HRS) wafer on a glass substrate was used for the antenna. The antenna achieved high gains: 8 dB at 5.7 GHz and 1 dB at 2.4 GHz. The RF MEMS DC contact switches were simulated and analyzed using ANSYS software.

A Study on Tribological Properties of Diamond-like Carbon Thin Film for the Application to Solid Lubricant of MEMS Devices (MEMS 소자의 고체윤활박막으로 활용하기 위한 다이아몬드상 카본 박막의 트라이볼로지 특성 분석)

  • Choi, Won-Seok;Hong, Byung-You
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.11
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    • pp.1010-1013
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    • 2006
  • Hydrogenated Diamond-like carbon (DLC) films were Prepared by the radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas for the application to solid lubricant of MEMS devices. We have checked the influence of varying RF power on tribological properties of DLC film. We have checked their performance as two kinds of method such as FFM (Friction Force Microscope) and BOD (Ball-on Disk) measurement. The friction coefficients and the contact number of cycles to steady state decreased as the increase of RF power with FFM and BOD measurement, respectively.

A Study on Improvement of Heater Rod Adhesion in Semiconductor Equipment (반도체 장비 히터로드 유착 개선에 관한 연구)

  • Wang, Hyun-Chul;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.67-72
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    • 2020
  • This study analyzes the method of adhesion and improvement between heat.er and RF filter in PE-CVD equipment through TRIZ method and proposes a solution. TRIZ Solution such as function analysis, 9-window matrix, ASIT, and Root cause analysis were used. The contact temperature between the heater and the RF filter was 20% and the surface temperature was lowered to 5.7℃, suggesting an improvement method for the thermal expansion of the PE-CVD equipment hot zone.

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

  • Gogna, Rahul;Jha, Mayuri;Gaba, Gurjot Singh;Singh, Paramdeep
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.7-12
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    • 2016
  • This paper proposes a metal contact RF MEMS switch which utilizes a see-saw mechanism to acquire a switching action. The switch was built on a quartz substrate and involves vertical deflection of the beam under an applied actuation voltage of 5.46 volts over a signal line. The see-saw mechanism relieves much of the operation voltage required to actuate the switch. The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of −90.9 dB (compared to − 58 dB in conventional designs ), the insertion of −0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design ) making the switch suitable for wide band applications.

Properties of Ga-doped ZnO transparent conducting oxide fabricated on PET substrate by RF magnetron sputtering (RF 마그네트론 스퍼터링 공정으로 PET 기판 위에 제조한 Ga-doped ZnO 투명전도막의 특성)

  • Kim, Jeong-Yeon;Kim, Byeong-Guk;Lee, Yong-Koo;Kim, Jae-Hwa;Woo, Duck-Hyun;Kweon, Soon-Yong;Lim, Dong-Gun;Park, Jae-Hwan
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.1
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    • pp.19-24
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    • 2010
  • The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

Opportunistic Spectrum Access Using Optimal Control Policy in RF Energy Harvesting Cognitive Radio Networks (무선 에너지 하비스팅 인지 무선 네트워크에서 최적화 제어 정책을 이용한 선택적 스펙트럼 접근)

  • Jung, Jun Hee;Hwang, Yu Min;Cha, Gyeong Hyeon;Kim, Jin Young
    • Journal of Satellite, Information and Communications
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    • v.10 no.3
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    • pp.6-10
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    • 2015
  • RF energy harvesting technology is a promising technology for generating the electrical power from ambient RF signal to operate low-power consumption devices(eg. sensor) in wireless communication networks. This paper, motivated by this and building upon existing CR(Cognitive Radio) network model, proposes a optimal control policy for RF energy harvesting CR networks model where secondary users that have low power consumption harvest ambient RF energy from transmission by nearby active primary users, while periodically sensing and opportunistically accessing the licensed spectrum to the primary user's network. We consider that primary users and secondary users are distributed as Poisson point processes and contact with their intended receivers at fixed distances. Finally we can derive the optimal frame duration, transmission power and density of secondary user from the proposed model that can maximize the secondary users's throughput under the given several conditions and suggest future directions of research.

Performance Optimization Study of FinFETs Considering Parasitic Capacitance and Resistance

  • An, TaeYoon;Choe, KyeongKeun;Kwon, Kee-Won;Kim, SoYoung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.525-536
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    • 2014
  • Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

Power Transmission Mechanism and Data Communication of the Dosimeter using Contactless Powerless Transmission (선량계의 무선전력 전송 메카니즘과 데이터 통신 시스템 구현)

  • Lee, Seung-Min;Chung, Sung-In;Lee, Heung-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.4
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    • pp.814-819
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    • 2010
  • This study proposes the antenna circuit design for the transmitting wireless power, the development of the RF non-contact type Dosimeter. That is, the study designed the optimization and numerical analysis of the antenna circuit for the antenna design of 13.56MHz over the frequency bands for transmitting wireless power. We studied the needed items in the existing RF type Dosimeter with battery to implement the wireless power non-contact Dosimeter within the battery. We compared to the real measurement value as calculating the value of the inductance and capacitance through the numerical analysis for the antenna LC resonance using the theory of the electromagnetic induction method. This method to drive low power is designed to simplify the circuit and to improve the efficiency of the rectifier. We convince our research contributes not only to understand the simplified circuit and miniaturization, but also to help the design and application technology of the wireless power transmit system which is received power supply with wireless.

Studies on the Optimization of Contact Oxide Etching Process Using Taguchi Method (Taguchi 방법을 사용한 콘택 산호막 식각 공정 최적화 연구)

  • Jeon, Yeong-Jin;Kim, Chang-Il;Gu, Jin-Geun;Yu, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.5 no.1
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    • pp.63-74
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    • 1995
  • Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. From the two times experiments of Taguchi method, the overall behaviors of the etchmg characteristics depending upon the equipment parameters were understood at the 1st Taguchi experiment, the detail and optimal process conditions were extracted from the 2nd Taguchi experiment. As a final analysis of experimental results, the optimal etching characteristics were obtalned at the process conditions of $CHF_{3}/CF_{4}$ gas flow rate=72/8 sccm, chamber pressure=50 mTorr, RF power=300 Watts, magnetic field intensity=90 Gauss.

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Surface Modification of Polystyrene (PS) by Atmospheric Pressure Plasma (상압 플라즈마를 이용한 Polystyrene (PS)의 표면개절)

  • Lee, Jong-Su;Shin, Hyun-Seok;Seok, Jin-Woo;Jang, Gyu-Wan;Beag, Yeong-Hwan
    • Journal of the Korean Vacuum Society
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    • v.18 no.1
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    • pp.1-8
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    • 2009
  • Hydrophilic Surface modification of Polysarene (PS) was performed by Atmospheric Pressure Plasma (APP). Air or 0, gases were used for carrier gases and RF power was changed from 150 to 350 W. We controlled the treatment time as 1 time to 4 time passing through the plasma region. when the carrier gas was air, the water contact angle on the PS surface was decreased from $91^{\circ}$ to $20^{\circ}$. And the surface energy increased from 45.74 dyne/cm to 68.48 dyne/cm. In case of the $O_2$ plasma treatment, at 300 W of RF power and 4 times treatment, the water contact angle on the PS. Surface was decreased from $91^{\circ}$ to $17^{\circ}$ and the surface energy was increased from 45.74 dyne/cm to 69.73 dyne/cm. The surface energy was increased by polar force not by dispersion force. Improvement of surface properties can be explained by the formation of new hydrophilic groups which is identified as C-O, C=O by XPS analysis. The contact angle of APP treated PS surface kept in air was increased with time elapse, but maintained same value when it was kept in water. We treated the PS surface by APP and deposited Cu as $4,000\;{\AA}$ and $8,000\;{\AA}$ by thermal evaporation. The adhesion between sample and Cu thin film improvement of treated PS surface against untreated sample. could be verifiable by Tape test (ASTM D3359)