• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.953-956
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• 2005

Low voltage actuation and high isolation characteristics are key features to be solved in electrostatic RF switch design. Since these parameters in the conventional parallel plate MEMS switch design are in trade-off relation, both requirements cannot be met simultaneously. In vertical comb design, however, the actuation voltage is independent to the vertical separation distance between the contact electrodes. Then, we can design the large separation distance between contact electrodes to get high isolation. We have designed an RF MEMS switch which has -40dB isolation at 5 GHz and 6 V operation voltages. The characteristics of the fabricated switch are being evaluate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.64-69
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• 2011

Super-hydrophobic properties have been achieved on the rf-sputtered polytetrafluoroethylene(PTFE) films deposited on etched aluminum surfaces. The microstructural evolution created after etching has been investigated by FESEM. The water contact angle over $160^{\circ}$ can be achieved on the rf-sputtered ultra-tihn PTFE film less than 10 nm coated on aluminum surface etched with 7 wt.%, 12.5 wt.%, and 15 wt.% HCl concentration for 12 min. XPS analysis have revealed the presence of a large quantity of $-CF_3$ and $-CF_2$ groups in the rf-sputtered PTFE films that effectively can reduce the surface energy of etched aluminum. The presence of patterned morphology along with the low surface energy at the rf-sputtered PTFE coating makes the aluminum surface with high super-hydrophobic property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.96-96
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• 2010

To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.543-549
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• 2006

Polyimides (PI) are treated with $He/O_2$ and $He/O_2/NF_3$ atmospheric pressure rf dielectric barrier discharge in order to investigate the roles of $NF_3$ that is one of the PI etching gases. Surface changes are analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurement. The surface roughness of PI and the ratio of C=O, which is hydrophilic functional group, is more increased by $He/O_2/NF_3$ discharge than by $He/O_2$ discharge. The C=O species on the PI surface is increased up to 30 percent with rf power. The surface roughness of PI is increased from 0.4 to 11 nm with rf power. The water drop contact angles on PI, however, are reduced from $65^{\circ}\;to\;9^{\circ}$ by plasma treatment independently of $NF_3$.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.22-27
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• 2010

To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.774-779
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• 1995

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1306-1308
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• 2003

RF-ID technic will got over not only damage which can be caused by contact ID technic but also worse awareness with the lapse of time. In advance, for subway the fares of mass transportation at rush hours of the days, it's important to find a way to collect fares without unnecessarily delaying passengers. In this paper. we are proposing RF-ID system using the RF Communication Technic and Energy Transformation Technic.