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http://dx.doi.org/10.4191/KCERS.2006.43.1.038

The Plasma Modification of Polycarbonate and Polyethersulphone Substrates for Ta2O5 Thin Film Deposition  

Kang, Sam-Mook (Department of Advanced Materials Engineering, Sungkyunkwan University)
Yoon, Seok-Gyu (Department of Advanced Materials Engineering, Sungkyunkwan University)
Jung, Won-Suk (Department of Advanced Materials Engineering, Sungkyunkwan University)
Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
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Abstract
Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.
Keywords
Plasma treatment; Adhesion; Contact angle; Polyethersulphone; Polycarbonate;
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