• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.1-5
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• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37A no.10
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• pp.834-840
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• 2012

The use of ranging sensors on automobiles is becoming common with the desire of traffic safety by providing drivers the information of the relative distance between the vehicles. In this paper, the LED visible light ranging system different from the conventional ranging systems using the RF signal is investigated. For such a system, we propose a novel ranging algorithm which combines the time-of-flight (TOF) with the CDMA technology. Via the CDMA technology, the TOF ranging system can accurately distinguish the desired ranging signal from the visible light interferences of the neighbor vehicles. In addition, the proposed system can also overcome the light noise from other luminaries, i.e. sun-light, traffic-light, and so on. The simulation results show that the CDMA-based LED ranging system has a significant improvement for the ranging accuracy compared with the case without employing the CDMA.

• The Korea Journal of Herbology
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• v.26 no.4
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• pp.95-99
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• 2011

Objective : In this study, we demonstrate the protective effect on oxidative DNA damage of leaf extracts from Abeliophylli distichi Folium via its antioxidant activity for the establishment of new value for the herbal medicine. Methods : Abeliophylli distichi Folium leaves were extracted with hot-water and ethylacetate (EtOAC). The 1,1-diphenyl-2- picrylhydrazyl (DPPH) radical and hydroxyl scavenging assay and $Fe^{2+}$ chelating assay were performed for antioxidative effect and ${\varphi}$X-174 RF I DNA cleavage assay and intracellular DNA damage assay were used for inhibitory effect of intracellular DNA damage. Results : In DPPH, Hydroxyl radical scavenging activity and $Fe^{2+}$ chelating activity of EtOAC extracts were 94.72%, 62.88%, 41.13%, and hot-water extracts were 88.86%, 56.7%, 37.4% at 200 ${\mu}g/m{\ell}$, respectively. Also, those extracts showed protective effect of DNA damage against the oxidative stress. Conclusion : These results indicated that the leaf extracts of Abeliophylli distichi Folium can be used as a natural antioxidants, which effectively inhibits the oxidative DNA damage.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.503-504
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• 2006

This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

• Journal of Ginseng Research
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• v.20 no.3
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• pp.318-324
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• 1996

The effects of light on the growth and ginsenosides production were examined in the hairy roots of Panax ginsen C.A. Meyer induced by Agrobacterium rhizogines A4. The 9rowth of ginseng hairy roots in 1/2MS liquid medium was significantly decreased with an increment of light intensity (1,000~7,000 lux). The growth of hairy roots under 7,000 lux condition was decreased at 17% compared to the dark condition. The production of 7 ginsenosides in hairy root was very high in 3,500 lux condition. The production of ginsenoside-Rg, and Rf increased 3.3 and, 2.4 times respectively as compared to dark condition. The growth of hairy roots was inhibited by blue light, while ginsenosides production was increased. The sucrose demands of hairy roots was examined in light condition(3,500 lux). The growth of hairy roots in 1/2MS liquid medium with various sucrose concentrations(1~4%) was high in IVp sucrose, while ginsenosides production was high in 3% sucrose condition. The growth and ginsenosides production were high when hairy roots were cultured in dark condition for 1 week and then transferred to light condition(3,500 lux) for 4 weeks. It is suggested that ginsenosides production could be accelerated by light intensity of specific wavelength in cultures of ginseng hairy roots.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.43-49
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• 2014

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1995.05a
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• pp.171-175
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• 1995

Semiconductor diode lasers that can generate one watt or more of optical energy for tens of milliseconds (quasi continuous wave) are now readily available. Several researchers have demonstrated that this power level, when properly coupled, can reliably initiate pyrotechnic mixtures. This means that the initiator containing the pyrotechnic can be protected against inadvertent initiation from electromagnetic radiation or electrostatic discharge by a conducting Faraday cage surrounding the explosive. Only a small dielectric window penetrates the housing of the initiator, thereby eliminating the conductors necessitated by a bridgewire electroexplosive device. The diode laser itself, however, functions at a low voltage (typically 3 volts) and hence is susceptible to inadvertent function from power supply short circuits, electrostatic discharge or induced RF energy. The rocket motor arm-fire device de-scribed in this paper uses a diode laser, but protects it from unintentional function with a Radio Frequency Attenuating Coupler (RFAC).The RFAC, invented by ML Aviation, a UK company, transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit and the pyrotechnic from all electromagnetic and electrostatic hazards. The first production application of a diode laser and RFAC device was by the Korean Agency for Defense Development.

• Journal of the Korea Institute of Military Science and Technology
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• v.20 no.6
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• pp.813-821
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• 2017

This paper presents the study result on a realization of wireless umbilical device for missile systems. In general, a missile system is connected to a fire control equipment via an umbilical connector to get the electrical power for its internal equipment and communicate with each other. And these connectors inherently have many problems of mis-contact between pin and socket, and mis-separation during missile firing, etc. A wireless umbilical device using LC resonance is devised to solve these problems of the current technology. For hundreds of watts power transmission under the missile system environment of restricted space, we designed and made a prototype of wireless umbilical device. And we tested this wireless umbilical device with an aluminum cylinder having cutout windows which simulate missiles. We realized that the wireless technology can be used as a substitute for the conventional umbilical connectors, and EMI and environment tests should be followed further.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2016-2020
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• 2010

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.