• Proceedings of the Ginseng society Conference
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• 2002.10a
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• pp.376-384
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• 2002

Object To find out which of the 27 ginsenosides isolated from Panax ginseng C.A. Mey that may inhibit the proliferation of human osteosaocoma cell line $U_2OS$. Methods Effects of each individual ginsenoside on the proliferation of $U_2OS$ cell were studied by determining the viability of cancer cells during culture with or without the presence of the test compound. DNA assay was determined by flow cytometry. Results Ginsonosides -Ro, $-Rh_l,\;-Rh_2,\;-F_1\;and\;-L_8$ at concentrations of 5 ,umol/L could obviously suppress the proliferation of $U_2OS$ cells while ginsenosides $-Rg_1,\;-F_3,$ -Rf, PPT and PT significantly inhibited the cancer cells. Flow cytometry revealed that ginsenosides $-Ro,-Rg_1-Rf,-F_1-Rh_2,PPT$ and PT induced cell cycle arrest at $G_0/G_1$ phase with obvious decrease of cell count at Sand $G_2+M$ phase, Moreover, ginsenosides $-Rf_1,-Rg_1,\;-F_1$ and PPT induced significantly high rates of cell death as compared with the control. Conclusion These data suggested that ginsenosides inhibited $U_2OS$ proliferation Via cell cycle arrest or induction of cell death.

• Korean Journal of Audiology
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• v.18 no.3
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• pp.105-111
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• 2014

Assistive listening devices (ALDs) refer to various types of amplification equipment designed to improve the communication of individuals with hard of hearing to enhance the accessibility to speech signal when individual hearing instruments are not sufficient. There are many types of ALDs to overcome a triangle of speech to noise ratio (SNR) problems, noise, distance, and reverberation. ALDs vary in their internal electronic mechanisms ranging from simple hard-wire microphone-amplifier units to more sophisticated broadcasting systems. They usually use microphones to capture an audio source and broadcast it wirelessly over a frequency modulation (FM), infra-red, induction loop, or other transmission techniques. The seven types of ALDs are introduced including hardwire devices, FM sound system, infra-red sound system, induction loop system, telephone listening devices, television, and alert/alarm system. Further development of digital wireless technology in hearing instruments will make possible direct communication with ALDs without any accessories in the near future. There are two technology solutions for digital wireless hearing instruments improving SNR and convenience. One is near-field magnetic induction combined with Bluetooth radio frequency (RF) transmission or proprietary RF transmission and the other is proprietary RF transmission alone. Recently launched digital wireless hearing aid applying this new technology can communicate from the hearing instrument to personal computer, phones, Wi-Fi, alert systems, and ALDs via iPhone, iPad, and iPod. However, it comes with its own iOS application offering a range of features but there is no option for Android users as of this moment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.1-8
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• 2005

A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of Satellite, Information and Communications
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• v.5 no.1
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• pp.58-62
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• 2010

This paper presents the effects of RF performance parameters on the Galileo receiver design via simulation after reviewing the requirements of the Galileo receiver structure. At first, we considered the general requirements, structure and characteristics of the Galileo system. Then we designed the Galileo receiver focused on performance requirement of 16 dB C/N which is equal to 15 % Error Vector Magnitude(EVM) by using Advanced Design System(ADS) simulation program. In order to verify the function of Automatic Gain Control(AGC)), we measured the IF output power level by changing the input power level at the front - end of the receiver. We analyzed the performance degradation due to phase noise variations of Local Oscillator(LO) in the Galileo receiver through EVM when the minimum sensitivity level of -127 dBm is applied at the receiver. We also analyzed the performance degradation according to variable Analog-to-Digital Converter(ADC) bits within the Dynamic range, -92 ~ -139 dBm, which has been defined by gain range (-2.5 ~ +42.5 dB) in the AGC operation. The results clearly show that the performance of the Galileo receiver can be improved by increasing ADC bits and reducing Phase Noise of LO.

• Journal of Ginseng Research
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• v.47 no.6
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• pp.726-734
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• 2023

Background: Skeletal muscles play a key role in physical activity and energy metabolism. The loss of skeletal muscle mass can cause problems related to metabolism and physical activity. Studies are being conducted to prevent such diseases by increasing the mass and regeneration capacity of muscles. Ginsenoside Rg5 has been reported to exhibit a broad range of pharmacological activities. However, studies on the effects of Rg5 on muscle differentiation and growth are scarce. Methods: To investigate the effects of Rg5 on myogenesis, C2C12 myoblasts were induced to differentiate with Rg5, followed by immunoblotting, immunostaining, and qRT-PCR for myogenic markers and promyogenic signaling (p38MAPK). Immunoprecipitation confirmed that Rg5 increased the interaction between MyoD and E2A via p38MAPK. To investigate the effects of Rg5 on prevention of muscle mass loss, C2C12 myotubes were treated with dexamethasone to induce muscle atrophy. Immunoblotting, immunostaining, and qRT-PCR were performed for myogenic markers, Akt/mTOR signaling for protein synthesis, and atrophy-related genes (Atrogin-1 and MuRF1). Results: Rg5 promoted C2C12 myoblast differentiation through phosphorylation of p38MAPK and MyoD/E2A heterodimerization. Furthermore, Rg5 stimulated C2C12 myotube hypertrophy via phosphorylation of Akt/mTOR. Phosphorylation of Akt induces FoxO3a phosphorylation, which reduces the expression of Atrogin-1 and MuRF1. Conclusion: This study provides an understanding of how Rg5 promotes myogenesis and hypertrophy and prevents dexamethasone-induced muscle atrophy. The study is the first, to the best of our knowledge, to show that Rg5 promotes muscle regeneration and to suggest that Rg5 can be used for therapeutic intervention of muscle weakness and atrophy, including cancer cachexia.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.5
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• pp.444-449
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• 2003

In this paper, a PCB(Printed Circuit Board) antenna for IMT-2000 is designed and analyzed. The antenna has a helical structure with via-holes and lines on FR-4($\varepsilon$$\sub$${\gamma}$/=4.6 ) PCB, and the type of feeding is GCPW(Grounded Co-Planar Waveguide). Using HFSS of Ansoft, the antenna was designed and the measured results of frequency and radiation characteristic,3 with VSWR<2.0 are satisfied within operating frequency band of 1.920∼2.170 GHz. And it has resonating frequency of 2.045 GHz and a bandwidth of 321 MHz. The radiation gain of the antenna was measured to be -1 dBi.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.249-254
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• 2020

An 80 nm thick zinc aluminate thin film was deposited on a glass substrate via radio-frequency (rf) magnetron sputtering and heat treated to analyze changes in the wetting angles due to a surface modification. The thin films were modified from hydrophilic to hydrophobic by a simple thermal treatment. The surface modification from a heat treatment increased the wetting angles up to 111°, which was explained by the relationship with the excess surface area. The wetting angles of the annealed thin films decreased with increasing exposure time under ambient conditions, which was attributed to the oxygen vacancies in the films that were introduced during deposition. The annealed thin films were treated by ionized oxygen via oxygen plasma. After the oxygen plasma treatment, the decreased wetting angles were maintained at ~95° for 11 days.

• Korean Journal of Plant Resources
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• v.21 no.6
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• pp.449-456
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• 2008

The flowers of Buddleja officinalis are used to treat sore and damaged eyes, a condition which is similar to skin wounds. However, whether it has any protective effect on oxidative DNA damage and cell death induced by hydroxyl radical remains unclear. In this study, we evaluated the protective effects of the extracts against oxidative DNA and cell damage caused by hydroxyl radical. DPPH radical, hydroxyl radical, hydrogen peroxide and intracellular ROS scavenging assay, and $Fe^{2+}$ chelating assay were used to evaluate the antioxidant properties. phi X 174 RF I plasmid DNA and intracellular DNA migration assay were used to evaluate the protective effect against oxidative DNA damage. Lastly, MTT assay and lipid peroxidation assay were used to evaluate the protective effect against oxidative cell damage. It was found to prevent intracellular DNA and the normal cells from oxidative damage caused by hydroxyl radical via antioxidant activities. These results suggest that Buddleja officinalis may exert the inhibitory effect on ROS-induced carcinogenesis by blocking oxidative DNA damage and cell death.