• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.123-123
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• 2009

In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.307-311
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• 2017

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1175-1177
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• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.249-255
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• 1990

High Tc Supperconducting thin films were fabricated by rf magnetron sputtering method. We have successfully controlled the compositions of films by adding sintered CuO pellets on YBa2Cu3O7-x single target. High Tc thin films with large grian size and good crystal habit were obtained by rapid thermal annealing process. The films deposited on SrTiO3(100) single crystal substrate indicated the existence of c-axis prefered orientation confirmed by XRD and SEM analysis. The Tc, zero's of sharp resistive transition for rapid annealed films deposited on polycrystalline YSZ substrate and on SrTiO3(100) single crystal substrate were 79K and 88K, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.329.1-329.1
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• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.71-75
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• 2006

ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture $In_{2}O_{3]$(90 wt%) and $SnO_{2}$ (10 wt%). ITO films were sputtered with substrate temperature from 30 to $300^{\circ}C$ and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was $1.8{\times}10^{-5}{\Omega}/cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.624-630
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• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.