Browse > Article
http://dx.doi.org/10.5370/KIEE.2011.60.6.1175

Polarization Characteristics of SBN Thin Film by RF Magnetron Sputtering  

Kim, Jin-Sa (조선이공대학 메카트로닉스과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.60, no.6, 2011 , pp. 1175-1177 More about this Journal
Abstract
The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.
Keywords
Sputtering; Polarization; Coercive voltage; Leakage current; Fatigue;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
Times Cited By SCOPUS : 0
연도 인용수 순위
1 Jin-Sa Kim " Electrical Properties with Annealing Temperature of SBN Thin Film" Trans. KIEE, Vol. 59, No. 6 pp. 1083-1086, 2010.
2 Seung-Chang Shin, Moon-Kee Lee et al, "Electric Properties of BST Thin with Ar/O2 ratio", J. of KIEEME, Vol. 12, No. 5 pp. 437-439, 1999.
3 Dong Hoon Kang, Hoon Sang Choi "Growth and Characteristics of $SrBi_2Ta_2O_9$ Thin Films for Memory Devices", Korean Journal of Materials Research, Vol. 12, No. 6 pp. 464-469, 2002.   DOI   ScienceOn
4 C Bedoya, Ch Muller, F Jacob, Y Gagou, M-A Fremy and E Elkaim "Magnetic- field-induced orientation in Co-doped $SrBi_2Ta_2O_9$ ferroelectric oxide" J. Phys.: Condens. Matter 14, No. 45 pp. 11849-11857, 2002.   DOI   ScienceOn
5 Nak-jin Seong and Soon-Gil Yoon "Preparation and Characteristics of Ferroelectric $SrBi_2Ta_2O_9$ Thin Films Deposited by Plasma-Enhanced Metalorganic Chemical Vapor Depotion Technique with Various Depotion Temperature", Korean Journal of Materials Research, Vol. 7, No. 5 pp. 381-385, 1997.
6 Jin-Sa Kim and Chung-Hyeok Kim "Surface Morphology and Dielectric Properties of SBN Thin Film by RF Sputtering Method", J. of KIEEME, Vol. 22, No. 8 pp. 671-672, 2009.
7 Jin-Sa Kim "Properties of Annealing Temperature of Ceramic Thin Film by RF Sputtering Method" Trans. KIEE, Vol. 58p, No. 4 pp. 538-540, 2009.
8 Keisuke Saito, Masatoshi Mitsuya, Norimasa Nukaga, Isao Yamaji, Takao Akai and Hiroshi Funakubo, "Method of Distinguishing $SrBi_2Ta_2O_9$ Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping", Jpn. J. Appl. Phys. Vol. 39 Pt.1, No. 9B, pp. 5489-5495, 2000.