• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.1-9
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• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.19-27
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• 1998

The Transmitter part of single RF transceiver chip for an extended GSM handset application was circuit-designed, fabricated adn evaluated. The RF-IC Chip was processed by 0.8${\mu}m$ Si BiCMOS, 80 pin TQFP of $10 {\times} 10mm$ size, 3.3V operated RF-IC reveals, in general, quite reasonable integrity and RF performances. This paper describes development resuts of RF transmitter section, which includes IF/RF up-conversion mixer, IF/RF polyphase and pre-amplifier. The test results show that RF transmitter section is well operated within frequency range of 880~915MHz, which is defined on the extended GSM(E-GSM) specification. The transmitter section also reveals moderate power consumption of 71mA and total output power of 8.2dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.76-79
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• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.9-18
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• 1998

A single RF transceiver chip for an extended GSM handset application was designedm, fabricated and evaluated. A RFIC was fabricated by using silicon BiCMOS process, and then packaged in 80 pin TQFP of $10 {\times} 10 mm^{2}$ in size. As a result, it was achieved guite reasonable integraty and good RF performance at the operation voltage of 3.3V. This paper describes development results of RF receiver section of the RFIC, which includes LNA, down conversion mixer, AGC, switched capacitor filter and down sampling mixer. The test results show that RF receiver section is well operated within frequency range of 925 ~960 MHz, which is defined on the extended GSM specification (E-GSM). The receiver section also reveals moderate power consumption of 67 mA and minimum detectable signal of -105 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.1
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• pp.60-63
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• 2009

In this paper, Designed and implemented about module that generate division signal for uplink section and downlink section for controlling Tx/Rx antenna of 2.3-2.7GHz WiMAX TDD repeater. It is consisted of RF block and Baseband block, and because function of this module is that synchronize with WiMAX signal and create division signal for uplink section and downlink section, this module was designed only received path. And because of manufacturing of most RF block by one chip, this module could minimize area. And in baseband block, used the WiMAX Modem to detect Preamble and DL-MAP information of WiMAX signal. This design can process about 2.3-2.7GHz WiMAX.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.507-511
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• 2010

Digital Radio Frequency Memory (below, DRFM) performs RF signal data store, delay and re-transmission. DRFM is wildly used as core module of Jammer, EW simulator, Target Echo Generator etc. This paper suggests a hardware design of DRFM which is composed RF section(RF Input/Output Module, Local Oscillator Module) and Digital section(ADC module, memory, DAC module), and confirm the validity of the propose by the test result.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.512-515
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• 2010

SIGINT(SIGnal INTelligence) includes several parameters intercepted by measurement and analysis of the RF(Radio frequency) signal from free space. One of the important parameters is frequency information. Expecially, in order to perform instantaneous frequency measurement of Radar and Missile seeker's RF signals, we use dedicated RF modules as a DFD(Digital Frequency Discriminator) to provide frequency information by measurement of the relative phase difference between signals via intended RF delay lines. It must measure and provide realtime based frequency information on short pulsed RF signal up to 100 nSec or less. This document proposes Ultra wideband DFD consisted of a RF input section of Wideband 4 channel RF delay line and correlator, a digital processing section to measure and provide frequency information from I/Q signal, and a frequency calibration section. Also, it will show design suitability based on test results measured under test condition of very short input pulse signals.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.473-480
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• 2013

In this paper, location recognition algorithm is developed to improve the accuracy using improve Trilateration. The location recognition algorithm is first calculate the location refer to the measured signal power. Error can be occurred when measure distance with arranged node in specific location. If the distance data is received from node (receiver, coordinator), Node selected for location calculation is defined through section. If the distance data is received from node (receiver, coordinator), Node selected for location calculation is defined through section. Second, we apply algorithm of section filtering. If there are 4 sections in node, we consider 1 section to 6 location recognition coordinates. A special characteristic drawback of RF is that the actual distance is actually farther than the calculated received distance data. This is error is incurred when the signal strength increases. We reduce the location recognition error by applying an improved algorithm as secondary after filtering primary through section filtering.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.555-558
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• 2009

In this paper, stealth technology is investigated with RCS(Radar Cross Section) reduction to minimize detection range of retroreflective echoes from enemy. Most RCS reduction comes from shaping. RAM(Radar Absorbing Materials) are applied only in areas where there are special problems. Therefore, we designed and fabricated a RAM that has absorption ability higher than 17 dB at 94 GHz for RF stealth in millimeter wave range. As a result, detection range of enemy can be reduced in the 62 percent range by using a developed RAM.