• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.5
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• pp.910-916
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• 2010

A modern artillery use a FMCW Proximity Fuze for effectively target destruction. FMCW Proximity Fuze can be deceived by Jamming Technique because it uses RF for distance estimation. FMCW Proximity Fuze algorithm is similar to FMCW radar's, but normal Jamming Tech. like Noise and Mulitone is useless. Most Shots with FMCW Proximity Fuze have a additional mechanical fuze against RF Jamming. Shots explode by mechanical fuze when Proximity Fuse is Jammed. However, distance Deception is available because shots can not distinguish between deception jamming signal and ground reflected signal. For making Distance Deception Jamming, FMCW signal tracking is demanded. In this paper, we propose a FMCW tracking method and develop the Jammer to show Jamming signal.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.38-46
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• 1999

o.25${\mu}m$ T-shaped gate P-HEMT is fabricated and used for design of X0band three stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA). The fabricated P-HEMT exhibits an extrinsis transconductance of 400mS/mm and a drain current of 400mA/mm. The RF and noise characteristics show that the current gain cut off frequency is 65GHz and minimum noise figure(NFmin) of 0.7dB with an associated gain of 14.8dB at 9GHz. In the design of the three stage LNA, we have used the inductive series feedback circuit topology with the short stub. The effects of series feedback to the noise figure, the gain, and the stability have been investigated to find the optimal short stub length. The designed three staage LNA showed a gain of above 33dB, a noise figure of under 1.2dB, and ainput/output return loss of under 15dB and 14dB, respectively. The results show that the fabricated P-HEMT is very suitable for a X-band LNA with high gain.

• Journal of Biomedical Engineering Research
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• v.16 no.3
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• pp.309-316
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• 1995

RF (radio-frequency) probes of Nuclear Magnetic Resonance are one of the important factors and should be designed and built properly depending upon the geometry of the samples and the information. In general there are two kinds of rf probes : one encircles the sample while the other is placed on the surface of the sample. However, in case that the samples on human internal organs have a tube shape, the two kinds of rf probes, as specified above, are usually unsuitable for the internal imaging due to the degradation of signal-to-noise ratios (SNR's). In this case a probe should be positioned as close to the area as possible by putting the probe in the tubelike sample to improve filling factor In the present study inside-out probes have been constructed in the three different shapes such as an anti-solenoidal, a saddle and a dual surface types. RF-field distributions have also been calculated depending upon the geometrical changes of anti-solenoid probes. Moreover, the performance of the inside-out probes has been checked by measuring SNR's of the images acquired. The inside-out probes constructed in this study produced better SWR's and rf-field uniformity in the area close to the probes in comparing with any other commercial probes. There is a high feasibility that the constructed probes in the present study are applicable to the diagnosis of human bodies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.6
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• pp.682-690
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• 2012

In this paper, a highly linear self oscillating mixers(SOM) using second harmonic injections are presented. The H-slot defected ground structure(DGS) is designed as a balanced resonator for oscillation in the proposed SOM. Since the H-slot DGS resonator achieves a high Q factor, it is a suitable structure to provide low phase noise for the oscillator. The single balanced mixer is utilized in this work and it provides good LO-RF isolation since balanced LO signals are suppressed at the RF input port. In order to inject the second harmonic of the IF, we propose two different methods using feedback loops. In the first method, IF achieves a 3.08 dB conversion gain at 226 MHz with input power of -20 dBm at 5 GHz RF input signal. The IF achieves 2 dB conversion gain at 423 MHz with the input power of -20 dBm at 5.2 GHz RF input signal in the second method. The measured IMD3s are 61.8 dB and 65 dB for the each method. These SOMs present improved linearity compared to that without the second harmonic injection because IMD3s are improved by 18. dB and 21 dB for each method.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• ETRI Journal
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• v.36 no.3
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• pp.510-513
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• 2014

A Q-band pHEMT image-rejection low-noise amplifier (IR-LNA) is presented using inter-stage tunable resonators. The inter-stage L-C resonators can maximize an image rejection by functioning as inter-stage matching circuits at an operating frequency ($F_{OP}$) and short circuits at an image frequency ($F_{IM}$). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L-C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR-LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and $F_{IM}/F_{OP}$ of the reported millimeter/quasi-millimeter wave IR-LNAs.

• Journal of electromagnetic engineering and science
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• v.7 no.2
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• pp.91-95
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• 2007

In this paper, a new linearization method has been proposed for a CMOS low noise amplifier(LNA) using the Post IM3 Compensator. The fundamental operating theory of the proposed method is to cancel the IM3 components of the LNA output signal by generating another IM3 components, which are out-phase with respect to that of the LNA, from the Post IM3 Compensator. A single stage common-source LNA has been designed to verify the linearity improvement of the proposed method through $0.13{\mu}m$ RF CMOS process for WiBro system. The designed LNA achieves +7.8 dBm of input-referred 3^{rd}$-order intercept point (IIP3) with 13.2 dB of Power Gain, 1.3 dB of noise figure and 5.7mA @1.5V power consumption. IIP3 is compared with a conventional single stage common-source LNA, and it shows IIP3 is increased by +12.5 dB without degrading other features such as gain and noise figure.

• Journal of Electrical Engineering and Technology
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• v.7 no.1
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• pp.81-85
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• 2012

This paper presents a wideband and low-noise direct conversion front-end receiver supporting VHF and UHFbands simultaneously. The receiver iscomposed of a low-noise amplifier (LNA), a down conversion quadrature mixer, and a frequency divider by 2. The cascode configuration with the resistor feedback is exploited in the LNA to achieve a wide operating bandwidth. Four gainstep modesare employed using a switched resistor bank and a capacitor bank in the signal path to cope with wide dynamic input power range. The verticalbipolar junction transistors are used as the switching elements in the mixer to reduce 1/f noise corner frequency. The proposed front-end receiver fabricated in 0.18 ${\mu}m$ CMOS technology shows very low minimum noise figureof 1.8 dB and third order input intercept pointof -12dBm inthe high-gain mode of 26.5 dBmeasured at 500 MHz.The proposed receiverconsumeslow current of 20 mA from a 1.8 V power supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.670-680
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• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.6
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• pp.149-154
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• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.