• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.55-60
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• 2001

RF MEMS is an exciting emerging technology that has great potential to develop TOC (Transceiver-on-Chip). Applications of the RF MEMS to wireless communications systems are presented. The ability of the RF MEMS technology to enhance the performance and to reduce the size of passive components, in particular, switches, inductors, and tunable capacitors, is addressed. A number of potential wireless system opportunities for the TOC are awaiting the maturation of the RF MEMS technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.129-129
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• 2009

In this paper, a tunable microstrip patch antenna designed using RF MEMS switches is reported. The design and simulation antenna were performed using high frequency structure simulator (HFSS). The antenna was designed in ISM Band and operates simultaneously at 2.4 GHz and 5.7 GHz with a -10 dB return-loss bandwidth of 20 MHz and 180 MHz, respect-tively. To obtain high efficiency and improve integrated ability, the High Resistivity Silicon (HRS) wafer was used for the antenna. The antenna achieved high gain with 8 dB at 5.7 GHzand 1.5 dB at 2.4 GHz. The RF MEMS DC contact switches was simulated and analysis by ANSYS software.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.145-150
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• 2011

In this paper, we designed a tunable microstrip patch antenna using RF MEMS switches. The design and simulation of the antenna were performed using a high frequency structure simulator(HFSS). The antenna was designed for use in the ISM band and either operates at 2.4 GHz or 5.7 GHz achieving -10 dB return-loss bandwidths of 20 MHz and 180 MHz, respectively. In order to obtain high efficiency and improve the ease of integration, a high resistivity silicon(HRS) wafer on a glass substrate was used for the antenna. The antenna achieved high gains: 8 dB at 5.7 GHz and 1 dB at 2.4 GHz. The RF MEMS DC contact switches were simulated and analyzed using ANSYS software.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.11-14
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• 2004

In this paper, a novel tunable bandpass filter using tunable series inductors and MEMS switches for wireless LAN applications was proposed. The proposed tunable filter was fabricated using a micromachining technology and performances of the fabricated filter were estimated. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was 58 V, and the measured center frequencies were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2010.05a
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• pp.562-563
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• 2010

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.04a
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• pp.325-326
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• 2011

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1507_1508
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• 2009

This study proposes a composite right/left-handed transmission line (CRLH-TL) that permits switching between the right-handed (RH) and left-handed (LH) modes using single crystalline silicon (SCS) RF MEMS switches. It is possible to change modes from the RH to LH mode, or vice versa, by controlling the admittance of capacitors and the impedance of inductors using switch operations. The proposed switchable CRLH-TL consists of SCS RF MEMS switches, metal-insulator-metal (MIM) capacitors and shunt inductors. At 8 GHz, the fabricated device shows a phase response of $87^{\circ}$ with an insertion loss of 2.7 dB in the LH mode, and a phase response of $-77^{\circ}$ with an insertion loss of 0.56 dB in the RH mode.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.77-81
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• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.882-885
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• 2011

This paper presents testing and self-calibration of RF circuits using MEMS switches to identify process-related defects and out of specification circuits. We have developed a novel multi-tone dither test technique where the test stimulus is generated by modulating the RF carrier signal with a multi-tone signal generated using an Arbitrary Waveform Generator (AWG) with additive white Gaussian noise. This test stimulus is provided as input to the RF circuit and peak-to-average ratio (PAR) is measured at the output. For a faulty circuit, a significant difference is observed in the value of PAR as compared to a fault-free circuit. Simulation is performed for various circuit conditions such as fault-free as well as fault-induced and their corresponding PARs are stored in the look-up table. This testing and self-calibration technique is exhaustive and efficient for present-day communication systems.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.