• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.27-34
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• 2004

The study on the RF substrate circuit is necessary to model RF output characteristics of deep submicron MOSFETs below 0.2$\mum$ gate length that have bun commercialized by the recent development of Si submicron process. In this paper, direct extraction methods are developed to apply for a simple substrate resistance model as well as another substrate model with connecting resistance and capacitance in parallel. Using these extraction methods, better agreement with measured Y22-parameter up to 30 GHz is achieved for 0.15$\mum$ CMOS device by using the parallel RC substrate model rather than the simple resistance one, demonstrating the RF accuracy of the parallel model and extraction technique. Using this model, bias and gate length dependent curves of substrate parameters in the RF region are obtained by increasing drain voltage of 0 to 1.2V at deep submicron devices with various gate lengths of 0.11 to 0.5㎛ These new extraction data will greatly contribute to developing a scalable RF nonlinear substrate model.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.359.2-359.2
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• 2016

붕소의 높은 융점과 비점으로 인하여 일반적인 합성법으로는 제조가 어려운 붕화금속 나노물질을 효과적으로 합성하기 위하여 열플라즈마의 특성을 전산해석 하였다. RF (Ratio Frequency, 고주파) 열플라즈마 발생기는 일반적인 직류 열플라즈마 발생기와 비교해 볼 때, 전극 침식에 의한 수명 문제나 불순물의 오염 없이 고온의 열플라즈마를 안정적으로 발생시킬 수 있기 때문에 고순도의 나노입자 합성공정에 좋은 조건을 가지고 있다. 그러나 열플라즈마의 고온 부분은 10,000 K 이상의 높은 온도를 가지고 있기 때문에 직접적인 측정으로는 나노입자 합성에 최적의 조건을 찾기가 어렵고, 전산해석을 통하여 여러 변수들에 대한 열플라즈마의 특성을 분석하여야 한다. 해석조건으로 RF 플라즈마의 입력전력은 25 kW로 고정하고 발생기 직경 20~35 mm, 유도코일 감은 수 4~6 회, 첫 번째 코일으로 부터 분말 주입구까지의 길이 10~30 mm, 방전 기체 유량 30~70 L/min에 대한 변수들에 대하여 붕화금속 나노입자 합성에 최적의 조건을 가진 RF 플라즈마의 온도 및 속도분포를 파악하였다. 전산모사 결과 RF 열플라즈마 발생기의 직경 25 mm, 분말주입구 까지의 길이 10 mm, 유도코일 감은 수 6 회, 방전 기체 유량 50 L/min 일 때, 고온영역이 중심부에 넓게 분포하여 붕화금속 나노입자를 합성하는데 최적의 조건이라 파악되었다. 방전 기체 유량 증가에 따라 고온영역의 중심부 분포를 넓게 할 수 있었으나 유량이 증가할수록 플라즈마 속도가 증가하여 붕소를 기화시키기 위한 가열시간이 짧아지므로 방전기체 유량을 조절하여 적절한 속도를 가진 플라즈마를 발생시켜야 한다. 그리고 코일의 감은 수가 증가할수록 10,000 K 이상 고온영역이 출구 쪽으로 확장되어 붕화금속 나노입자를 합성하는데 좋은 조건이 형성되었다. 본 전산해석 결과를 바탕으로 붕화금속 나노입자를 합성하는 RF 플라즈마 발생장치의 설계 및 운전조건을 적용하여 실험과의 비교연구를 통해 붕화금속 나노입자의 합성공정을 최적화 시킬 수 있다.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.84-90
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• 2005

The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.

• Journal of Navigation and Port Research
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• v.28 no.10 s.96
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• pp.875-879
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• 2004

In this paper, sub-harmonic pumped(SHP) mixer using anti-parallel diode pair(APDP) is designed for 5 GHz band wireless communication system. Conventional mixers mix LO with RF, and obtain IF signal from the difference between LO and RF. As the frequency increase, LO signal requires higher LO power, better phase noise characteristics, more stable La. However, using APDP, the SHP mixer mixes the 2nd harmonics of LO signal. Therefore, the SHP mixer has an advantage that the LO signal frequency required for IF signal is reduced at half value of LO fundamental frequency. When LO power is 3 dBm, the conversion loss of manufactured SHP mixer is 12.83 dB. The isolation of LO/IF, 2LO/IF, RF/1F and LO/RF is 39.17 dB, 58 dB, 34 dB, and 67.9 dB. respectively. For this case, IP3 at input is 8 dBm.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.79-85
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• 2004

In this paper, Sub harmonic mixer using anti-parallel diode pair is designed for 5.8 GHz Wireless LAN. Conventional mixers mix LO with RF and obtain IF signal from the difference between LO and RF. As frequency increase, LO signal is required increasing LO power, better phase noise, stable LO. But, using APDP, the SHP mixer mix the harmonics of LO signal. Therefore, Sub harmonic mixer is advantage that necessary LO signal frequency was used to operate the 1/2. When LO power is 3 dBm, the conversion loss of manufactured SHP mixer is 12.83 dB. The isolation of LO/IF, 2LO/IF, RF/IF and LO/RF is 39.17 dB, 58 dB, 34 dB, 67.9 dB. And IIP3 is 8 dBm.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.4
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• pp.292-299
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• 2012

The line-of-sight(LOS) rate is estimated using Kalman filter in Radio-Frequency(RF) seeker. For the two axis gimbaled seeker, proper system modeling is considered and the basic filter structure is set up. The main issue for Kalman filter is choosing the proper process and measurement noise. For the measurement process, the signal to noise ratio(SNR) and other components are introduced. To cope with the eclipse problem or other abnormal seeker status, the pseudo input signal concept is proposed. By conditioning abnormal signals, the LOS rate estimation performance is increased. The process noise is also an important factor in the propagation phase. The analytical approach on a process noise component is performed and a reliable region for the filter is calculated based on the eigenvalue analysis. Some numerical simulations are performed to check the validity of suggested algorithm.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.6
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• pp.25-29
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• 2017

This paper presents a hetero-integration of electrostatically actuated RF MEMS Switch and step up DC-DC converter on a redistribution layer using commercial PCB process. RF characteristics of Duroid with $56{\Omega}$ impedance GCPW transmission line and that of FR4 with $59{\Omega}$ impedance CPW transmission line were analyzed. From DC to 6GHz, RF characteristics of Duroid were better than that of FR4, insertion loss was 2.08dB lower, return loss was 3.91dB higher, and isolation was 3.33dB higher.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.273-279
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}$/4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1581-1586
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• 2012

In this paper, a novel resonator using ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 7.6dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 9.5dB compared to one using the general ${\lambda}/4$ microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of ring type DGS, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed ring type DGS resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.