• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.577-577
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• 2006

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.1-11
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• 1999

It is now common practice to utilize the quadrature RF coils to improve the signal-to-noise ratio (SNR) in the Magnetic Resonance Imaging (MRI) System. In addition, to make such an available SNR improvement, it is mandatory to use a well-designed quadrature coupler, which facilitates a perfect 3-dB coupling and quadrature-phase shift. However, the four ports matching condition has to be well considered during the RF excitation and the signal detection period. This work investigates the effects of such a mismatching condition (especially, due to patient) from the analysis, simulation, and real implementation and firstly proposes dynamic loading technique for a quadrature coupler and transmitting/receiving switch module to minimize a patient mismatching and enhance a system reliability. Also, we designed and implemented the quadrature coupler and transmitting/receiving switch module using microstrip. As a result, the SNR of our MRI system using the microstrip quadrature coupler and transmitting/receiving switch module with dynamic load increases 3 dB compared with the old one using USA quadrature switch. Also, the power capability of quadrature coupler and transmitting/receiving switch module is 5-kw peak power. Considering power loss and reduction of size, we used a RT/duroid 6010 substrate with high permittivity and for simulation we use Compact Software.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.953-956
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• 2005

Low voltage actuation and high isolation characteristics are key features to be solved in electrostatic RF switch design. Since these parameters in the conventional parallel plate MEMS switch design are in trade-off relation, both requirements cannot be met simultaneously. In vertical comb design, however, the actuation voltage is independent to the vertical separation distance between the contact electrodes. Then, we can design the large separation distance between contact electrodes to get high isolation. We have designed an RF MEMS switch which has -40dB isolation at 5 GHz and 6 V operation voltages. The characteristics of the fabricated switch are being evaluate.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.389-393
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• 2003

This paper describes the design of enhanced TSSI RF Power Detector which has wide dynamic range using switch and Log amp. This Power Detector consists of low and high gain loops, and they adaptively switched by output DC voltage which is proportioned to input power level. Because Power Detector needs to separate the channel, so architecture is heterodyne system having 70MHz intermediate frequency. This proposed RF Power Detector is settle to the satisfaction of Closed loop power control system for W-CDMA optic repeater, and the obtained dynamic range cover the higher than 50dB.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.147-150
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• 2005

Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.58-63
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• 2011

A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.134-138
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• 2006

The isolation performance of the S-band single-pole single-throw(SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide(GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9 dB is obtained with the coplanar wire-bond interconnection(CWBI) at a 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion(IMD3) are less than 1.94 dB over $3.2{\sim}3.6\;GHz$ and greater than 64 dBc.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2A
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• pp.201-206
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• 2006

A SPST Switch MMIC which used for Microwave Switch Matrix(MSM) of communications satellite payload with multi-beam function has been designed and fabricated. New RE FET switch configuration has been devised to improve power characteristics and isolation. Input and output return losses are better than another switches reported previously for both On and Off states. The MMIC chips were fabricated in 0.15um GaAs pHEMT process and measured insertion loss less than 2.0dB and isolation more than 63dB in the frequency range of 3GHz$\∼$4GHz. Output 3rd order interceptpoint above 32dBm has been recorded and the value is very high even though the unit pHEMT has gate width of 0.2mm and only four pHEMT are used in the MMTC.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.59-60
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• 2008

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.791-796
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• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.