Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Implementation of a Low Actuation Voltage SPDT MEMS RF Switch Applied PZT Cantilever Actuator and Micro Seesaw Structure

PZT 캔틸레버 구동기와 마이크로 시소구조를 적용한 저전압 SPDT MEMS RF 스위치 구현

  • Lee, Dae-Sung (Nano-Fusion Division, Korea Electronics Technology Institute) ;
  • Kim, Won-Hyo (Nano-Fusion Division, Korea Electronics Technology Institute) ;
  • Jung, Seok-Won (Nano-Fusion Division, Korea Electronics Technology Institute) ;
  • Cho, Nam-Kyu (Nano-Fusion Division, Korea Electronics Technology Institute) ;
  • Sung, Woo-Kyeong (Nano-Fusion Division, Korea Electronics Technology Institute) ;
  • Park, Hyo-Derk (Nano-Fusion Division, Korea Electronics Technology Institute)
  • 이대성 (전자부품연구원 나노융합본부) ;
  • 김원효 (전자부품연구원 나노융합본부) ;
  • 정석원 (전자부품연구원 나노융합본부) ;
  • 조남규 (전자부품연구원 나노융합본부) ;
  • 성우경 (전자부품연구원 나노융합본부) ;
  • 박효덕 (전자부품연구원 나노융합본부)
  • Published : 2005.11.26
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Abstract

Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

Keywords