• Title/Summary/Keyword: RF/DC magnetron sputtering

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Growth of p-ZnO by RF-DC magnetron co-sputtering (RF-DC magnetron co-sputtering법에 의한 p-ZnO 박막의 성장)

  • Kang Seung Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.6
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    • pp.277-280
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    • 2004
  • p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.

RF-enhanced DC-magnetron Sputtering of Indium Tin Oxide

  • Futagami, Toshiro;Kamei, Masayuki;Yasui, Itaru;Shigesato, Yuzo
    • The Korean Journal of Ceramics
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    • v.7 no.1
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    • pp.26-29
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    • 2001
  • Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

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Effect of RF Superimposed DC Magnetron Sputtering on Electrical and Bending Resistances of ITO Films Deposited on PET at Low Temperature (DC마그네트론 스퍼터링법으로 PET 기판위에 저온 증착한 ITO박막의 비저항과 굽힘 저항성에 대한 RF인가의 영향)

  • Park, Mi-Rang;Lee, Sung-Hun;Kim, Do-Geun;Lee, Gun-Hwan;Song, Pung-Keun
    • Journal of the Korean institute of surface engineering
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    • v.41 no.5
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    • pp.214-219
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    • 2008
  • Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

A Study on the Deposition Condition of Acoustic Bragg Reflector Using RF/DC Magnetron Sputtering (RF/DC Magnetron Sputtering을 이용한 Acoustic Bragg Reflector 최적 증착조건에 관한 연구)

  • ;Mai Linh
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.143-147
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    • 2002
  • In this paper, we investigated the deposition condition of Bragg reflector formation that will be expected to play an important role in future FBAR device applications. The thin films were deposited using an RF/DC magnetron sputtering technique. The material characteristics such as deposition rates, grain structures and surface roughnesses of the deposited silicon dioxide (SiO$_2$) and tungsten (W) films were investigated for various deposition conditions. As a result, it was found that the deposition condition could significantly affect the material characteristics of the deposited films and also the optimization of the deposition process is essentially important to obtain the desirable Brags reflector structure consisted of high-quality in films.

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A Study on the Characteristics of Ti Films Deposited by a DC Magnetron Sputtering Assisted with RF Voltage (고주파 마그네트론 스퍼터장치로 증착한 Ti 박막의 특성에 관한 연구)

  • Bae, Chang-Hwan;Lee, Ju-Hee;Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.22 no.3
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    • pp.143-148
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    • 2009
  • We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

A Study on the Annealed Properties of ITO Thin Film Deposited by RF-superimposed DC Reactive Magnetron Sputtering (RF/DC 동시인가 마그네트론 스퍼터링 방법으로 증착된 ITO 박막의 열처리 특성 연구)

  • Moon, Jin-Wook;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.40 no.3
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    • pp.117-124
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    • 2007
  • The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

A study of Nickel Oxide thin film deposited by DC magnetron and RF sputtering method (DC magnetron 방법과 RF 스퍼터링 방법으로 제작된 Nickel Oxide 박막의 특성 연구)

  • Choi, Kwang-Nam;Park, Jun-Woo;Baek, Seoung-Ho;Lee, Ho-Sun;Kwak, Sung-Kwan;Chung, Kwan-Soo
    • Proceedings of the IEEK Conference
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    • 2007.07a
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    • pp.441-442
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    • 2007
  • We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

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A Comparison of the Properties of DC and RF Sputter - deposited Cr films (DC 및 RF 스퍼터링법으로 증착한 Cr 박막의 특성 비교)

  • Park, Min-Woo;Lee, Chong-Mu
    • Korean Journal of Materials Research
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    • v.16 no.8
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    • pp.461-465
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    • 2006
  • Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as, hardness, surface roughness and corrosion-resistance of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. Salt fog tests were used to evaluate the corrosion resistance of the samples. The deposition rate, hardness, and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power but the adhesion strength is nearly independent of the sputtering power. The deposition rate, hardness, and adhesion strength of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface and higher corrosion-resistance. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one. The sputter-deposited Cr film also has higher corrosion-resistance than the electroplated one, which may be attributed to the smoother surface of the sputter-deposited film.

Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films Deposited by DC, RF Magnetron Co-sputtering (DC, RF 마그네트론 코스퍼터링법으로 증착한 ZTO/GZO 투명전도성막의 열처리 조건이 박막의 물성에 미치는 영향)

  • Oh, Sung-Hoon;Kang, Sae-Won;Lee, Gun-Hwan;Jung, Woo-Seok;Song, Pung-Keun
    • Journal of the Korean institute of surface engineering
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    • v.45 no.3
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    • pp.117-122
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    • 2012
  • ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and $SnO_2$ (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO ($Ga_2O_3$:5.57 wt%) target. These films were post-annealed at temperature of 200, $300^{\circ}C$ in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.

Pulsed DC Bias Effects on Substrate in TiNx Thin Film Deposition by Reactive RF Magnetron Sputtering at Room Temperature (반응성 RF 마그네트론 스퍼터링에 의한 TiNx 상온 성막에 있어서 기판 상의 펄스상 직류 바이어스 인가 효과)

  • Kim, Seiki
    • Journal of the Korean institute of surface engineering
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    • v.52 no.6
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    • pp.342-349
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    • 2019
  • Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N2/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiNx films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiNx films was decreased with application of the pulsed DC substrate bias voltage. The TiNx films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiNx films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.