• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.70.2-70.2
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• 2012

Ram pressure is known as one of the most efficient mechanisms to deplete the atomic gas of galaxies in the cluster environment. However, the influence of the ram pressure on the molecular gas is not yet clear. Since the molecular gas resides in the galactic center, thus in the deeper potential well, and has higher surface density than the atomic hydrogen, it has been known as that the molecular gas is not easily affected and/or stripped away by the ICM-ISM interaction. To investigate the influence of the ram pressure on the gas properties of galaxies, we compare HI and $^{12}CO$(J=1-0) distribution of NGC 4654 which is experiencing on-going ram pressure and shows distinct HI, CO, optical, and $H_2$ features due to the ram pressure. We discuss the possibilities of H2 formation from HI by the ram pressure and also the star formation activities.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.111-124
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• 2002

The ferroelectric RAM (FeRAM) has a great advantage for a system on a chip (SOC) and mobile product memory, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM and SRAM. This work develops at three levels: 1) low voltage operation with boost voltage control of bitline and plateline, 2) reducing bitline capacitance with multiple divided sub cell array, and 3) increasing chip performance with write operation sharing both active and precharge time period. The key techniques are implemented on the proposed hierarchy bitline scheme with proposed hybrid-bitline and high voltage boost control. The test chip and simulation results show the performance of sub-1.5 voltage operation with single step pumping voltage and self-boost control in a cell array block of 1024 ($64{\;}{\times}{\;}16$) rows and 64 columns.

• Journal of Korea Water Resources Association
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• v.45 no.3
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• pp.331-347
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• 2012

The downstream of the Nam River Dam is crucial region for long-term water resource planning for Busan and Gyeongnam Province. Thus, the analysis of flow behavior and water quality is necessary for the sustainable surface water management and the control of pollutant source. In this study, the flow field and BOD transport at the downstream of Nam River Dam were analyzed by incorporating 2-D water quality model, RAM4 and 3-D water quality model, WASP with the hydrodynamic model, RAM2 and EFDC, respectively. The application of 2-D flow analysis model, RAM2 showed that velocity distributions at the five transverse sections of the meandering part closely followed the measured values by ADCP, and the flow field and overflow characteristic at the submerged weir showed satisfactory performance compared with the result of 3-D EFDC model. In addition, the BOD concentration field obtained by RAM2-RAM4 coupled modeling was in good agreement with the result by EFDC-WASP model throughout the computational domain. The hydrodynamic characteristic and water quality at the downstream reach of Nam River Dam are mainly influenced by the Dam discharge, and the water quantity is closely related to the water quality control and fishery environment at the lower part of Nakdong River. Therefore, when further quantitative analysis is necessary regarding these issues, 2-D semi-coupled modeling is recommended in terms of computational effectiveness and model application aspect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.81-84
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• 2014

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on $HfO_2$ thin films have been demonstrated by using Ag/$HfO_2$/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with $HfO_2$ thin films as a transition layer. Compared to the as-deposited Ag/$HfO_2$/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/$HfO_2$/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> $10^4$ sec) were achieved.

• Proceedings of the Korea Water Resources Association Conference
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• 2009.05a
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• pp.895-899
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• 2009

실제 하천에서는 지형적 이산화에 따른 복잡성으로 인해 마름/젖음 현상이 발생하며 그로 인해 작은 수심에서 수치해석의 안정성에 영향을 주어 해석을 불가능하게 한다. 자연수로는 저수시 및 평수시에 물을 소통시키는 주수로부와 홍수시 수위 상승에 따라 주수로부에서부터 범람하게 되는 홍수터로 구성된다. 홍수터는 홍수류의 일시적인 저장이나 하류로 흐름을 전달하는 복합수로의 부분으로 사용된다. 자연수로에서 이와같은 흐름구조는 불규칙한 단면형상, 조도계수 등에 의해서 더욱 복잡하게 나타난다. 본 연구에서는 복잡한 지형과 자연 하천구조에 대한 동역학적인 흐름특성을 해석하고 오염물질의 이송-확산 해석 및 토사이송 해석과 연계하기 위해서 개발된 RAM-2 모형에 동수역학적 해석을 실시하였다. RAM-2 모형에는 대상하도에 대한 마름/젖음의 처리를 위해 흐름의 시간별 수위상승 및 하강 속도를 고려한 Deforming Grid 기법을 적용하였으며, 이에 대한 적용성을 검토하기 위해 마름/젖음 조건을 가지는 실험수로와 홍수터를 가진 사다리꼴 단면 그리고 실제 하도에 대해 적용하여 그 결과를 살펴보았다.

• 한국방재학회:학술대회논문집
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• 2010.02a
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• pp.98.1-98.1
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• 2010

본 연구에서는 한강 본류 팔당댐부터 잠실수중보까지의 22.5 km 구간에서 발생할 수 있는 수질 오염사고에 대한 오염물질 혼합거동 모의를 위해 RAMS를 이용하였다. 이를 위해서 2차원 흐름모형인 RAM2를 이용하여 유속장을 모의하고, 2차원 수질해석 모형인 RAM4를 이용하여 사고주입에 의한 오염물질의 시간에 따른 거동을 분석하였다. 최종적으로 잠실수중보에 위치한 주요 취수장에 미치는 영향을 분석하였다. 모의를 진행한 결과 오염물질의 이송 및 확산 거동은 투입 위치에 따라 크게 달라진다는 것을 알 수 있었다. 특히 팔당대교에서 투입된 오염물질이 풍납 취수장에 도착하는데 까지 걸리는 시간이 좌안주입과 우안주입의 경우 60시간 가까이 차이가 나는 것으로 나타났다. 따라서 오염 물질이 투입되었을 시에 일괄적으로 취수를 통제할 것이 아니라 상황에 따라 오염물질 투입 지점에 맞춰서 적절한 대책을 세워야 하는 것이 필요하다. 이 때 본 연구가 기초적인 정보를 제공할 수 있을 것이다.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1985.10a
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• pp.3.2-6
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• 1985

There are two major fields for system effectiveness investogations-RAM analysis and performance(capacity) analysis. The investgation methods for system effectiveness are discussed. And two prototypes are presented for RAM analysis and performance analysis.

• Journal of the Korean Society of Systems Engineering
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• v.14 no.1
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• pp.44-51
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• 2018

The purpose of RAM analysis in weapon systems is to reduce life cycle costs, along with improving combat readiness by meeting RAM target value. We analyzed the sensitivity of the RAM analysis parameters to the use of the operating system by using the Markov Process based model (MPS, Markov Process Simulation) developed for RAM analysis. A Markov process-based RAM analysis model was developed to analyze the sensitivity of parameters (MTBF, MTTR and ALDT) to the utility of the 81mm mortar. The time required for the application to reach the steady state is about 15,000H, which is about 2 years, and the sensitivity of the parameter is highest for ALDT. In order to improve combat readiness, there is a need for continuous improvement in ALDT.

• Journal of Applied Reliability
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• v.17 no.2
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• pp.150-158
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• 2017

Purpose: The RAM objective is a very important factor that has a great effect on the improvement of the operation ration during the operation maintenance and the reduction of the life cycle cost. It is used as a design criterion during the system development, and its sufficiency should be evaluated during its test evaluation. Method: This study analyzed the cases related to RAM objective setting and suggested the improvement measures. Result: The base data for RAM objective is OMS/MP, which needs to be drawn up under the supervision of the requirement military, and a high-accuracy operating availability should be set through ALDT calculation which reflects the military logistics support environment. In addition, data collection necessary for RAM objective and RAM analysis should be made by supplementing the input data of DELIIS. Conclusion: This study suggests improvement of RAM objective considering for the weapon system.