• Journal of Korean Society for Quality Management
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• v.43 no.4
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• pp.511-520
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• 2015

Purpose: This study suggests a method of risk assessment based on RAM analysis in order to reduce the subjectivity. Methods: RAM analysis is used to assessment risk consequence(RC) and risk likelihood(RL). Result: The calculated result of the product, which has higher risk assessment, shows lower MTBF system. Conclusion: Risk assessment based on objective database will provide objectivity and effective quality control.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.1473-1480
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• 2008

This article deals with a case study on evaluating RAM(Reliability, Availability and Maintainability) performance of the door systems. The RAM performance is analysed based on the field data. The definition and category of failures of the door systems are presented and reliability for each categories is predicted with field data. MTTR(Mean Time To Repair) is estimated through the replacement time of line replaceable units(LRU). The availability is predicted based on the estimated reliability and maintainability.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.5
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• pp.855-866
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• 2023

With the rapid advancement and sophistication of defense weapon systems, the government, military, and the defense industry have conducted various innovative attempts to improve the efficiency of post-logistics support(PLS). The Ministry of Defense has mandated RAM-C(Reliability, Availability, and Maintainability-Cost) analysis as a requirement according to revised Total Life Cycle System Management Code of Practice in May 2022. Especially, for the project budget forecast of new PBL(Performance Based Logistics) business contacts, RAM-C is recognized as an obligatory factor. However, relevant entities have not officially provided guidelines or manuals for RAM-C analysis, and each defense contractor conducts RAM-C analysis with different standards and methods to win PBL-related business contract. Hence, this study aims to contribute to the generalization of the analysis procedure by presenting a cost analysis case based on RAM-C for the supply of military depot maintenance PBL project. This study presents formulas and procedures to determine requirements of military depot maintenance PBL project for repair parts supply. Moreover, a sensitivity analysis was conducted to find the optimal cost/utilization ratio. During the process, a correlation was found between supply delay and total cost of ownership as well as between cost variability and utilization rate. The analysis results are expected to provide an important basis for the conceptualization of the cost analysis for the supply of military depot maintenance PBL project and are capable of proposing the optimal utilization rate in relation to cost.

• Proceedings of the Korean Information Science Society Conference
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• 2011.06b
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• pp.364-365
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• 2011

본 논문에서는 FeRAM을 주 기억장치 및 보조 기억장치로 활용하는 다중 채널 FeRAM 시스템을 설계한다. FeRAM 의 비 위발성과 저 전력 소모의 장점을 활용하는 한편 다중 채널을 이용한 병렬 처리와 FPGA 내부 버퍼를 사용을 통해 읽기/쓰기 속도를 향상시켰다[1].

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.6
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• pp.102-116
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• 2008

In the development stage of weapon system, it is important to analyze RAM(Reliability, Availability and Maintainability) characteristics. RAM simulation is one of the advanced techniques for analyzing RAM to overpass the limit of mathematical techniques. However, it is necessary to obtain correct input data for reliability and maintainability about target and support system to get highly accurate results through RAM simulation. In this study, we propose the technical method to improve the results by defining input data of simulation more correctly based on analyzing effects of RAM characteristics by major factors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.1
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• pp.50-59
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• 1987

So far a variety of RAM-based approaches including the Filtering Method have been suggested to shorten the rule seletion time in production systems, but this paper presents a somewhat different approach based on the use of CAM. This paper suggests a proper use of CAM bits respect to their characteristics and describes data stsuctures for basic Artificial Intelligence symbolic list processing, and finally compares the simulation results from the CAM-based approach to those from RAM-based approaches.

• Journal of the Korea Convergence Society
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• v.11 no.10
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• pp.1-7
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• 2020

The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO₂/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 10³ ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.659-660
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• 2006

The low crosstalk row-decoder is studied for PoRAM applications. Because polymer-based memories can be more densely integrated than established silicon-based ones, PoRAM is highly sensitive for the crosstalk problem. To overcome the problem and to suggest the suitable decoder for PoRAM, this paper shows the comparison of the row-path characteristics for both the 2-stage dynamic logic decoder and the 2-stage static logic decoder. Moreover, to suppress the Glitch effect which is observed by using the static logic decoder, the Master-Slave(M/S) D-Flip/Flop(D-F/F) is applied as a deglitch. Finally, the improved output result of the 2-stage static logic decoder with the M/S D-F/F is shown..