• Title/Summary/Keyword: R&D process

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A Comparative Study by Subject on the New R&D Planning Process (신규 R&D 기획 프로세스에 관한 주체별 비교연구)

  • Bae, Junhee;Park, Jungkyu
    • Economic and Environmental Geology
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    • v.52 no.3
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    • pp.243-250
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    • 2019
  • The purpose of this study is to pro-actively respond to changes in government R&D policy and start to supplement the limitations of previous KIGAM R&D planning process. We looked out through the existing literature for a variety of R&D planning process, and analyzed the R&D planning process characteristics of each institution through the interview. As a result, we can be derived conclusions and implications from three sides, environmental analysis, demand excavation methods, R&D project configuration and selection method. In the case of environmental analysis and the overall need to enhance the skills and mega trend analysis by market trend analysis. And in the demand side, the institute need to establish challenging and specific R&D goals. In addition, in case of configuration and selection of R&D projects we derived several implications, such as convergence, SME support, resource analysis, selection of long-term project.

A Study on the process modeling for weapon system R&D CALS system (무기체계 연구개발 CALS체계 구현 프로세스 모델링 연구)

  • 김철환;김동순;정진원
    • The Journal of Society for e-Business Studies
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    • v.4 no.2
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    • pp.177-196
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    • 1999
  • The current process of weapon system R&D has lots of problems that the phase is complex, the concept of integration and/or connection of related data is laked and don't be digitalized. To solve these problems we should establish the R&D CALS system and to do this, analysis the R&D process is necessary. In this paper, We suggested weapon system R&D CALS concept and model, and analysed R&D process with ARIS Toolset and proposed the new R&D process and operation scenarios with CALS concept.

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Application of the Analytic Hierarchy Process (AHP) on the National Nuclear R&D Projects (원자력연구개발사업의 사후평가를 위한 계층화 분석법(AHP)의 적용)

  • 곽승준;유승훈;신철오
    • Proceedings of the Korea Technology Innovation Society Conference
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    • 2001.05a
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    • pp.369-385
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    • 2001
  • A R&D project evaluation method has been applied for the national nuclear R&D projects in a developing-country setting. In the methodology, Saaty's analytic hierarchy process model is used to evaluate and rank of the selected nuclear R&D project which have a wide range of objectives and characteristics. The criteria used for evaluation related specifically to the Korea's evaluation needs and culture, and they are weighted according to their relative importance as perceived by the evaluator of the R&D project. As a real-world case of evaluation, we elicited and reproduced the evaluation process of the nuclear R&D projects which is going under the research process. As the results of the paper suggests, the methodology can be applied to the evaluation of the R&D projects and has much potential.

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A Case Study on R&D Process Innovation Using PI6sigma Methodology (PI6sigma를 이용한 R&D 프로세스 혁신 사례 연구)

  • Kim, Young-Jin;Jeong, Woo-Cheol;Choi, Young-Keun
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.33 no.1
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    • pp.17-23
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    • 2010
  • The corporate R&D(Research and Development) has a primary role of new product development and its potential is the most crucial factor to estimate corporate future value. However, its systemic inadequacies and inefficiencies, the shorten product life-cycle to satisfy customer needs, the global operations by outsourcing strategy, and the reduction of product cost, are starting to expose to R&D business processes. The three-phased execution strategy for R&D innovation is introduced to establish master plan for new R&D model. From information technology point of view, PLM(Product Life-cycle Management) is one of the business total solutions in product development area. It is not a system, but the strategic business approach that collaboratively manage the product from beginning stage to end of life in all business areas PLM functions and capabilities are usually used as references to re-design new R&D process. BPA(Business Process Assessment) and 5DP(Design Parameters) in PI6sigma developed by Samsung SDS Consulting division are introduced to establish R&D master plan and re-design process respectively. This research provides a case study for R&D process innovation. How process assessment and PMM(Process Maturity Model) can be applied in business processes, and also it explains process re-design by 5DP method.

The Effect of Process Maturity on the Performance of Industrial R&D Projects (프로세스 성숙도가 기업 R&D 프로젝트의 성과에 미치는 영향에 관한 연구)

  • Hong, Soon-Wook
    • IE interfaces
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    • v.16 no.3
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    • pp.362-374
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    • 2003
  • The major objective of this paper is to empirically examine the effect of process maturity on the performance of industrial R&D projects. Process maturity, a fundamental concept of the Capability Maturity Model developed by Software Engineering Institute, represents the essential of Total Quality Management (TQM). Based on literature, our research model constructs process maturity in terms of structured process, goal setting and controlling, metrics, and process learning; and links it to the R&D performance that consists of technical, commercial and managerial successes. The model also includes firm size as a moderator of different effects that process maturity may have across firms. Measures for process maturity are based on the best practices identified in literature. Data are obtained from 77 successful R&D projects carried out by Korean manufacturing firms. Multiple regression and t-test are used to test proposed hypotheses. Findings are as follows. (1) In the R&D process, process maturity partially contributes to the performance of R&D projects. More specifically, goal setting and controlling-related practices drive both technical and commercial successes, while process learning-related practices drive commercial success. In contrast, traditionally emphasized elements such as structured process or metrics are found not to be significant. (2) The degree of process maturity is significantly higher in large firms. (3) Process maturity impacts on commercial success in the case of large firms, whereas it does on technical success in the case of small firms. The results imply that the TQM principles are partially associated with R&D performance, and the nature of benefit from high maturity could vary according to firm size.

Plastic Substrate for Flexible TFT LCD

  • Hwang, Hee-Nam;Choi, Jae-Moon;Yeom, Eun-Hee;Park, Yong-Ho;Kim, Lee-Ju;You, Ho-Young;Lee, Ki-Ho;Kim, In-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1406-1408
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    • 2006
  • Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

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Correlation between spin density and Vth instability of IGZO thin-film transistors

  • Park, Jee Ho;Lee, Sohyung;Lee, Hee Sung;Kim, Sung Ki;Park, Kwon-Shik;Yoon, Soo-Young
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1447-1450
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    • 2018
  • The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

Analysis of Process Parameters to Improve On-Chip Linewidth Variation

  • Jang, Yun-Kyeong;Lee, Doo-Youl;Lee, Sung-Woo;Lee, Eun-Mi;Choi, Soo-Han;Kang, Yool;Yeo, Gi-Sung;Woo, Sang-Gyun;Cho, Han-Ku;Park, Jong-Rak
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.100-105
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    • 2004
  • The influencing factors on the OPC (optical proximity correction) results are quantitatively analyzed using OPCed L/S patterns. ${\sigma}$ values of proximity variations are measured to be 9.3 nm and 15.2 nm for PR-A and PR-B, respectively. The effect of post exposure bake condition is assessed. 16.2 nm and 13.8 nm of variations are observed. Proximity variations of 11.6 nm and 15.2 nm are measured by changing the illumination condition. In order not to seriously deteriorate the OPC, these factors should be fixed after the OPC rules are extracted. Proximity variations of 11.4, 13.9, and 15.2 nm are observed for the mask mean-to-targets of 0, 2 and 4 nm, respectively. The decrease the OPC grid size from 1 nm to 0.5 nm enhances the correction resolution and the OCV is reduced from 14.6 nm to 11.4 nm. The enhancement amount of proximity variations are 9.2 nm corresponding to 39% improvement. The critical dimension (CD) uniformity improvement for adopting the small grid size is confirmed by measuring the CD uniformity on real SRAM pattern. CD uniformities are measured 9.9 nm and 8.7 nm for grid size of 1 nm and 0.5 nm, respectively. 22% improvement of the CD uniformity is achieved. The decrease of OPC grid size is shown to improve not only the proximity correction, but also the uniformity.

Structure and Properties of Hemispherical Grain LPCVD Polycrystalline Silicon Films (반구형 LPCVD 다결정 실리콘 박막의 구조 및 특성)

  • Park, Yeong-Jin;Jeon, Ha-Eung;Lee, Seung-Seok;Lee, Seok-Hui;U, Sang-Ho;Kim, Jong-Cheol;Park, Heon-Seop;Cheon, Hui-Gon;O, Gye-Hwan
    • Korean Journal of Materials Research
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    • v.1 no.2
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    • pp.77-85
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    • 1991
  • In this study we have investigated surface morphologies of as-deposited silicon films on the various deposition conditions using LPCVD(Low Pressure Chemical Vapor Deposition) System. The processing conditions such as deposition temperature, pressure and flow rate of $SiH_4$ gas were found to determine the surface morphology. The optimum temperature of maximum effective surface area increased with increasing the deposition pressure and the flow rate of $SiH_4$ gas, These experimental results were also in quite good agreement with the equation derived under the assumption that the maximum effective surface area is obtained on the condition of maximum nucleation rate.

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