• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1069-1072
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

• 제어로봇시스템학회논문지
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• 제10권7호
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• pp.604-610
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.199-202
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• 한국진공학회지
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• 제13권1호
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• pp.39-45
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• 2004

UV-나노임프린팅 (Ultraviolet-Nanoimprinting Lithography:UV-NIL) 공정 기술은 수십 나노에서 수 나노미터 크기의 구조물을 적은 비용으로 대량생산 할 수 있다는 장점을 가지고 있는 기술로 최근 전세계적으로 연구가 활발히 진행되고 있다. 본 연구에서는 반도체 공정 중 마스크 제작 공정을 이용하여 나노패턴을 가진 5${\times}$5${\times}$0.09 인치 크기의 수정스탬프(quartz stamp)를 제작하였고, 임프린팅 (imprinting)시에 레지스트(resist)와 스탬프(stamp) 사이에서 발생하는 점착현상(adhesion)을 방지하고자 그 표면에 Fluoroalkanesilane(FAS) 표면처리를 하였다. 웨이퍼의 평탄도를 개선하고 친수(hydrophilic) 상태의 표면을 만들기 위해 그 표면에 평탄화층을 스핀코팅하였고, 1 nl의 분해능을 가진 디스펜서(dispenser)를 이용하여 레지스트 액적을 도포하였다. 스템프 상의 패턴과 레지스트에 임프린트된 패턴은 SEM, AFM 등을 이용하여 측정하였으며, EVG620-NIL 장비를 이용한 임프린팅 실험에서 370 nm - 1 um 크기의 다양한 패턴을 가진 스탬프의 패턴들이 정확하게 레지스트에 전사됨을 확인하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.676-679
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• 2005

Nano imprint Lithography (NIL) is regarded as one of the next-generation lithography technologies with EUV lithography, immersion lithography, Laser interference lithography. Because a Si wafer stamp and a quartz stamp, used to imprinting usually are very expensive and easily broken, it is suggested that master stamp is duplicated by PDMS and the PDMS stamp uses to imprint .For using the PDMS stamp, a thermally curable monomer resin was used for the imprinting process to lower pressure and temperature. As a result, NIL patterns were successfully fabricated.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.672-675
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• 2005

To imprint 70-nm wide line-patterns, we used a newly developed ultraviolet nanoimprint lithography (UV-NIL) process in which an elementwise patterned stamp (EPS), a large-area stamp, and pressurized air are used to imprint a wafer in a single step. For a single-step UV-NIL of a 4' wafer, we fabricated two identical $5'\times5'\times0.09'(W{\times}L{\times}H)$ quartz EPSs, except that one is with nanopatterns and the other without nanopatterns. Both of them consist of 16 small-area stamps, called elements, each of which is $10\;mm\;\times\;10\;mm$. UV-curable low-viscosity resin droplets were dispensed directly on each element of the EPSs. The volume and viscosity of each droplet are 3.7 nl and 7 cps. Droplets were dispensed in such a way that no air entrapment between elements and wafer occurs. When the droplets were fully pressed between ESP and wafer, some incompletely filled elements were observed because of the topology mismatch between EPS and wafer. To complete those incomplete fillings, pressurized air of 2 bar was applied to the bottom of the wafer for 2 min. Experimental results have shown that nanopatterns of the EPS were successfully transferred to the resin layer on the wafer.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.126-126
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• 2004

1996년 Chou 등이 개발한 가열방식의 나노임프린트 리소그래피(nanoimprint lithography, NIL)은 선폭 100nm 이하의 나노구조물을 경제적으로 제작할 수 있는 대표적인 나노패턴닝(nano-patterning) 공정으로 많은 기대가 모아지고 있으나, 열변형에 의해 다층정렬이 어렵다는 점과, 점도가 큰 레지스트(resist)를 임프린트하기 위해서는 고압(∼30 bar)이 필요하다 점 등의 문제점이 있다. 이를 해결할 수 있는 방법으로 UV 나노임프린트 리소그래피(ultraviolet nanoimprint lithography, UV-NIL)를 들 수 있다.(중략)

• 한국광학회지
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• 제17권4호
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• pp.317-322
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• 2006

본 논문에서는 폴리머 광도파로 열 격자(arrayed waveguide grating: AWG)를 나노임프린트 방법을 이용하여 제안하고 구현하였다. 빔전파방법을 도입하여 소자를 설계하고 해석하였다. 균일한 접착 및 분리 특성을 갖는 임프린트용 PDMS(polydimethylsiloxane) 스탬프(stamp)를 쿼츠 글래스 물질로 만들어진 마스터 몰드를 이용하여 개발하였다. 이 PDMS 스탬프로 폴리머층을 눌러서 소자 패턴을 형성하고 폴리머를 스핀코팅하여 소자를 완성하였다. 이러한 소자는 식각공정 없이 간단한 스핀코팅과 임프린트 공정만으로 만들어지기 때문에 대량 생산에 적합할 것이다. 제작된 폴리머 AWG 소자의 출력 채널 수는 8개, 채널 간격은 0.8nm, 각 채널의 중심파장은 1543.7nm $\sim$ 1548.3nm 였다. 평균적인 채널 누화와 대역폭은 각각 $\sim$10dB와 0.8nm였다.