• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.185-197
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• 1996

We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.27-32
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• 1993

Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.

• Progress in Superconductivity
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• v.1 no.1
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• pp.31-35
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• 1999

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-$T_c$ superconducting (HTS) $YBa_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed on the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height, t/h. The spread of step-edge junction parameters was measured from each 13 junctions with t/h=1/3, 1/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.477-478
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• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.1085-1097
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• 2022

A printed circuit steam generator (PCSG) is being considered as the component for pressurized water reactor (PWR) type small modular reactor (SMR) that can further reduce the physical size of the system. Since a steam generator in many PWR-type SMR generates superheated steam, it is expected that dryout front oscillation can potentially cause thermal fatigue failure due to cyclic thermal stresses induced by the transition in boiling regimes between convective evaporation and film boiling. To investigate the fatigue issue of a PCSG, a reference PCSG is designed in this study first using an in-house PCSG design tool. For the stress analysis, a finite element method analysis model is developed to obtain the temperature and stress fields of the designed PCSG. Fatigue estimation is performed based on ASME Boiler and pressure vessel code to identify the major parameters influencing the fatigue life time originating from the dryout front oscillation. As a result of this study, the limit on the temperature difference between the hot side and cold side fluids is obtained. Moreover, it is found that the heat transfer coefficient of convective evaporation and film boiling regimes play an essential role in the fatigue life cycle as well as the temperature difference.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.465-470
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• 2021

Deuterium is a crucial clean energy source required for nuclear fusion and is a future resource needed in various industries and scientific fields. However, it is not easy to enrich deuterium because the proportion of deuterium in the hydrogen mixture is scarce, at approximately 0.016 %. Furthermore, the physical and chemical properties of the hydrogen mixture and deuterium are very similar. Therefore, the efficient separation of deuterium from hydrogen mixtures is often a significant challenge when using modern separation technologies. Recently, to effectively separate deuterium, studies utilizing the 'Kinetic Quantum Sieving Effect (KQS)' of porous materials are increasing. Therefore, in this review, two different strategies have been discussed for improving KQS efficiency for hydrogen isotope separation performance using nanoporous materials. One is the gating effect, which precisely controls the aperture locally by adjusting the temperature and pressure. The second is the breathing phenomenon, utilizing the volume change of the structure from closed system to open system. It has been reported that efficient hydrogen isotope separation is possible using these two methods, and each of these effects is described in detail in this review. In addition, a specific-isotope responsive system (e.g., 2nd breathing effect in MIL-53) has recently been discovered and is described here as well.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.3
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• pp.46-52
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• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1045-1057
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• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.193-193
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• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.467-471
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• 2000

The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.