• Title/Summary/Keyword: Quantum-Dots

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Specific Detection of DNA Using Quantum Dots and Magnetic Beads for Large Volume Samples

  • Kim, Yeon-Seok;Kim, Byoung-Chan;Lee, Jin-Hyung;Kim, Jung-Bae;Gu, Man-Bock
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.11 no.5
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    • pp.449-454
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    • 2006
  • Here we present a sensitive DNA detection protocol using quantum dots (QDs) and magnetic beads (MBs) for large volume samples. In this study, QDs, conjugated with streptavidin, were used to produce fluorescent signals while magnetic beads (MBs) were used to isolate and concentrate the signals. The presence of target DNAs leads to the sandwich hybridization between the functionalized QDs, the target DNAs and the MBs. In fact, the QDs-MBs complex, which is bound using the target DNA, can be isolated and then concentrated. The binding of the QDs to the surface of the MBs was confirmed by confocal microscopy and Cd elemental analysis. It was found that the fluorescent intensity was proportional to concentration of the target DNA, while the presence of non-complementary DNA produced no significant fluorescent signal. In addition, the presence of low copies of target DNAs such as 0.5 pM in large volume samples up to 40mL was successfully detected by using a magnet-assisted concentration protocol which consequently results in the enhancement of the sensitivity more than 100-fold.

Photocurrent of HgTe Quantum Dots (HgTe 양자점의 광전류 특성)

  • Kim, Hyun-Suk;Kim, Jin-Hyoung;Lee, Joon-Woo;Song, Hyun-Woo;Cho, Kyoun-Gah;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.84-87
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    • 2003
  • HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed $H_2O$ containing in thiol by the remarkable drop of current at the state of vacuum. It was thought that the proper passivation layer on the top of HgTe film reduce the dark current and the adequate choice of capping material improves the efficiency of the photocurrent in the HgTe QDs. This study suggests that HgTe QDs are very prospective materials for optoelectronics including photodetectors in the IR range.

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Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs

  • Song, J.D.;Han, I.K.;Choi, W.J.
    • Applied Science and Convergence Technology
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    • v.24 no.6
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    • pp.254-256
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    • 2015
  • Effect of growth temperature ($T_g$) on the structural and optical properties of $In_{0.5}Ga_{0.5}As$ atomic layer epitaxial (ALE) quantum dots (QDs) is investigated in the range of $T_g=480-510^{\circ}C$. $In_{0.5}Ga_{0.5}As$ ALE QDs consist of 5 periods of short-period superlattices (SPSs) of 1 monolayer-thick InAs and GaAs. Number of coalescent QDs decreases as $T_g$ increases, and they disappear at $T_g=510^{\circ}C$. As $T_g$ increases in the range of $480-495^{\circ}C$, sizes of QDs increase, and densities of QDs decrease due to merge of QDs. On the contrary, although sizes of QDs are maintained at $T_g=495-510^{\circ}C$, densities of QDs decrease. This is attributed to the desorption of material-mainly indium-during the growth interruption. This conjecture is supported by the optical properties of the QDs as a function of $T_g$. As a result, we propose that optimum growth temperature of the QD is $495^{\circ}C$ with less repetition of SPSs than 5.

Rapid Topological Patterning of Poly(dimethylsiloxane) Microstructure (Poly(dimethylsiloxane) 미세 구조물의 신속한 기하학적 패터닝)

  • Kim, Bo-Yeol;Song, Hwan-Moon;Son, Young-A;Lee, Chang-Soo
    • Textile Coloration and Finishing
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    • v.20 no.1
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    • pp.8-15
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    • 2008
  • We presented the modified decal-transfer lithography (DTL) and light stamping lithography (LSL) as new powerful methods to generate patterns of poly(dimethylsiloxane) (PDMS) on the substrate. The microstructures of PDMS fabricated by covalent binding between PDMS and substrate had played as barrier to locally control wettability. The transfer mechanism of PDMS is cohesive mechanical failure (CMF) in DTL method. In the LSL method, the features of patterned PDMS are physically torn and transferred onto a substrate via UV-induced surface reaction that results in bonding between PDMS and substrate. Additionally we have exploited to generate the patterning of rhodamine B and quantum dots (QDs), which was accomplished by hydrophobic interaction between dyes and PDMS micropatterns. The topological analysis of micropatterning of PDMS were performed by atomic force microscopy (AFM), and the patterning of rhodamine B and quantum dots was clearly shown by optical and fluorescence microscope. Furthermore, it could be applied to surface guided flow patterns in microfluidic device because of control of surface wettability. The advantages of these methods are simple process, rapid transfer of PDMS, modulation of surface wettability, and control of various pattern size and shape. It may be applied to the fabrication of chemical sensor, display units, and microfluidic devices.

Optical Properties of InAs Quantum Dots Grown by Using Arsenic Interruption Technique

  • Choe, Yun-Ho;Kim, Hui-Yeon;Ryu, Mi-Lee;Jo, Byeong-Gu;Kim, Jin-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.268-268
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    • 2011
  • GaAs (001) 기판에 MBE를 이용하여 자발형성법으로 성장한 InAs 양자점(QDs: quantum dots)의 광학적 특성을 PL (photoluminescence)과 TRPL (time-resolved PL)을 이용하여 분석하였다. InAs 양자점 성장 동안 In 공급은 계속하면서 As 공급을 주기적으로 차단과 공급을 반복하면서 성장하였다. As 차단과 공급을 1초, 2초, 그리고 3초씩 하면서 InAs 양자점을 성장하였다. 기준시료는 In과 As 공급을 중단하지 않고 20초 동안 성장하였다. As interruption mode로 성장한 시료들의 QD density는 기준시료에 비해 증가하였으며, size distribution도 기준시료에 비해 향상되었다. 기준시료와 비교하였을 때, As interruption mode로 성장한 시료들의 PL 피크는 적색이동 (red-shift)를 보였으며, PL 세기는 2배 이상 증가하였다. PL 소멸곡선은 파장이 증가함에 따라 점차 느려지다가 PL 피크에서 가장 느린 소멸을 보인 후 다시 점차 빠르게 소멸하였다. 시료의 온도를 10 K에서 60 K까지 증가하였을 때 PL 피크 에너지는 변하지 않았으며, PL 소멸시간은 서서히 증가함을 보였다. 온도를 더 증가하였을 때 PL 피크 에너지는 적색이동 하였으며 PL 소멸시간도 빠르게 감소함을 보였다. As interruption mode로 성장한 양자점 시료의 구조적 특성 변화에 의한 광학적 특성 변화를 확인하였다.

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Synthesis and Characterization of CdSe/CdS/N-Acetyl-L-Cysteine/Quercetin Nano-Composites and Their Antibacterial Performance

  • Wang, Kunjie;Li, Mingliang;Li, Hongxia;Guan, Feng;Zhang, Deyi;Feng, Huixia;Fan, Haiyan
    • Journal of the Korean Chemical Society
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    • v.59 no.2
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    • pp.136-141
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    • 2015
  • We have discovered that quercetin, once coated on the CdSe and CdSe-CdS quantum dots (QDs), becoming highly water soluble. In the present work, we have successfully synthesized CdSe/CdS/N-Acetyl-L-Cysteine(NAC)/Quercetin nano-composites in the aqueous solution. The products were characterized using UV-vis spectroscopy, X-ray powder diffraction, fluorescence spectroscopy, and Fourier transform infrared spectroscopy. The transmission electron microscopy (TEM) tests indicated that our nano-composite products are highly stable with homogeneous particle size and great monodispersity. Quercetin coated nano-composite CdSe/CdS/NAC/Quercetin showed different fluorescence behavior from that of CdSe/CdS/NAC. Most amazingly, the synthesized CdSe/CdS/NAC/Quercetin nano-composite exhibits strong antibacterial activity. The combination of the strong fluorescence and its antibacterial activity makes the quercetin modified quantum dots as a potential candidate for cancer targeted therapy and other cancer treatments.

Influence of GaAs/AlGaAs Superlattice Layers on Optical Properties of InAs Quantum Dots (InAs 양자점의 광학적 성질에 미치는 초격자층의 영향)

  • Jeong Yonkil;Choi Hyonkwang;Park Yumi;Hwang Sukhyon;Yoon Jin-Joo;Lee Jewon;Leem Jae-Young;Jeon Minhyon
    • Korean Journal of Materials Research
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    • v.14 no.2
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    • pp.146-151
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    • 2004
  • We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

Photoluminescence Characteristics of InAs Quantum Dots Grown on AlAs Epitaxial Layer (AlAs 에피층 위에 성장된 InAs 양자점의 Photoluminescence 특성연구)

  • Kim, Ki-Hong;Sim, Jun-Hyoung;Bae, In-Ho
    • Korean Journal of Materials Research
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    • v.19 no.7
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    • pp.356-361
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    • 2009
  • The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

Enhancing Performance of 1-aminopyrene Light-Emitting Diodes via Hybridization with ZnO Quantum Dots

  • Choi, Jong Hyun;Kim, Hong Hee;Choi, Won Kook
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.238-243
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    • 2022
  • In this study, a pyrene-core single molecule with amino (-NH2) functional group material was hybridized using ZnO quantum dots (QDs). The suppressed performance of the 1-aminopyrene (1-PyNH2) single molecule as an emissive layer (EML) in light-emitting diodes (LEDs) was exploited by adopting the ZnO@1-PyNH2 core-shell structure. Unlike pristine 1-PyNH2 molecules, the ZnO@1-PyNH2 hybrid QDs formed energy proximity levels that enabled charge transfer. This result can be interpreted as an improvement in surface roughness. The uniform and homogeneous EML alleviates dark-spot degradation. Moreover, LEDs with the ITO/PEDOT:PSS/TFB/EML/TPBi/LiF/Al configuration were fabricated to evaluate the performance of two emissive materials, where pristine-1-PyNH2 molecules and ZnO@1-PyNH2 QDs were used as the EML materials to verify the improvement in electrical characteristics. The ZnO@1-PyNH2 LEDs exhibited blue luminescence at 443 nm (FWHM = 49 nm), with a turn-on voltage of 4 V, maximum luminance of 1500 cd/m2, maximum luminous efficiency of 0.66 cd/A, and power efficiency of 0.41 lm/W.

Aqueous Synthesis and Luminescent Characteristics of Cu:ZnSe Quantum Dots by Internal Doping Method (내부 도핑 법에 의한 Cu 도핑 Cu:ZnSe 양자점의 수계 합성 및 발광 특성)

  • Back, Geum Ji;Hong, Hyun Seon
    • Journal of Powder Materials
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    • v.29 no.5
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    • pp.370-375
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    • 2022
  • Cu-doped ZnSe quantum dots were successfully synthesized in an aqueous solution using an internal doping method. The effects of ligand type, CuSe synthesis temperature, and heating time on Cu-doped ZnSe synthesis were systematically investigated. Of MPA, GSH, TGA, and NAC used as ligands, MPA was the optimal ligand as determined by PL spectrum analysis. In addition, the emission wavelength was found to depend on the synthesis temperature of the internal doping core of CuSe. As the temperature increased, the doping of Cu2+ was enhanced, and the emission wavelength band was redshifted; accordingly, the emission peaks moved from blue to green (up to 550 nm). Thus, the synthesis of Cu:ZnSe using internal doping in aqueous solutions is a potential method for ecomanufacturing of color-tuned ZnSe quantum dots for display applications.