• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.9
• /
• pp.397-407
• /
• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.4
• /
• pp.278-286
• /
• 2011

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• Applied Science and Convergence Technology
• /
• v.23 no.1
• /
• pp.1-13
• /
• 2014

Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.

• 한국초전도학회:학술대회논문집
• /
• 2009.07a
• /
• pp.59-59
• /
• 2009

• Nuclear Engineering and Technology
• /
• v.53 no.4
• /
• pp.1218-1223
• /
• 2021

A hydrophobic ionic liquid including an amino moiety ([DiOcAPmim][NTf₂]) was synthesized. Its extraction behaviors towards Pd(II), Ru(III), Rh(III) were investigated in nitric acid aqueous solution as a function of contact time, effect of concentration of nitric acid, effect of temperature, and effect of co-existing metal ions. The extraction kinetics of Pd(II) was fairly fast and extraction equilibrium can be attained within only 5 min under the [HNO₃] = 2.05 M. When [HNO₃]< 1 M, the extraction percentage of Pd(II), Ru(III), Rh(III) were all above 80%. When [HNO₃] reached 2 M, all of the extraction percentage decreased and in an order of Pd(II)>Ru(III)>Rh(III). When [HNO₃]> 2 M, the extraction performance gradually recovered. The effect of temperature can slightly affect the extraction performance of Pd(II). Furthermore, in simulated high-level liquid waste, [DiOcAPmim][NTf₂] showed a better preference towards Pd(II) under the interference of various other co-existing metal ions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2017.10a
• /
• pp.454-456
• /
• 2017

Current and capacitance-voltage characteristics of tunnel field effect transistor (TFET) with various quantum models were investigated. Density gradient, Bohm quantum potential (BQP), and Vandort quantum correction are used with calibrating against Schrodinger-Poisson model. Drive-currents in all models. are decreased. When only BQP is used, SS and $V_{onset}$ are fixed but drive-current is decreased 3 times more than those of no quantum model. And When BQP with Vandort and density gradient are used, SS increased more than 40 mV./dec and $V_{onset}$ shifted as 0.07 eV.

• Proceedings of the Optical Society of Korea Conference
• /
• 2009.02a
• /
• pp.525-526
• /
• 2009

we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at $720^{\circ}C$ sample as 3 times higher as compared to the as-grown sample. The effect may be assigned to an expected reduction in number of nonradiative recombination centers in the quantum well.

• Progress in Superconductivity and Cryogenics
• /
• v.25 no.1
• /
• pp.1-5
• /
• 2023

The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.8
• /
• pp.44-52
• /
• 1998

The theoretical modeling of transition energy and absorption coefficient for intersubband transitions in quantum wells in presented. We include, as well as hartree and exchange-correlation potentials, boht depolarization effect and exciton-like effect which play great roles in heavily doped cases where practically reasonable absorption coefficients are available. Also, the calculated results are compared with the existing experimental values for .delta.-doped Si quantum wells to check the validity of our theoretical calculation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.08a
• /
• pp.286-286
• /
• 2007