Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Effect of rapid thermal annealing on InGaP/InGaAlP multiple quantum well structures grown by molecular beam epitaxy

MBE 성장 InGaP/InGaAlP 다중양자우물의 RTA 에 의한 PL 특성 변화

  • 박광욱 (광주과학기술원 정보통신공학과) ;
  • 박창영 (광주과학기술원 정보통신공학과) ;
  • 임재문 (광주과학기술원 정보통신공학과) ;
  • 이용탁 (광주과학기술원 정보통신공학과)
  • Published : 2009.02.12
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Abstract

we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at $720^{\circ}C$ sample as 3 times higher as compared to the as-grown sample. The effect may be assigned to an expected reduction in number of nonradiative recombination centers in the quantum well.

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