• 제목/요약/키워드: Quantum communication

검색결과 186건 처리시간 0.024초

차단층 설계 변수가 GaN 기반 LED 특성에 미치는 영향 (The Effect of Blocking Layer Design Variable on the Characteristics of GaN-based Light-Emitting Diode)

  • 이재현;염기수
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.233-236
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    • 2012
  • 본 논문에서는 차단층 설계 변수에 따른 GaN 기반 LED의 출력 특성을 분석하였다. 사용된 LED의 기본 구조는 GaN 버퍼층을 기반으로 GaN 장벽과 InGaN 양자 우물로 이루어진 활성 영역이 AlGaN EBL(Electron Blocking Layer)과 AlGaN HBL(Hole Blocking Layer) 사이에 구성되어 있다. ISE-TCAD를 이용하여 GaN 기반 LED에서 EBL의 Al 몰분율과 두께, HBL의 Al 몰분율과 도핑 농도에 따른 출력 전력과 내부 양자 효율 특성을 분석하였다.

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확장성 신뢰성 갖춘 양자 컴퓨터를 위한 CMOS 기반 제어 및 센싱 회로 기술 (CMOS Interconnect Electronics Architecture for Reliable and Scalable Quantum Computer)

  • 김주성;한정환;남재원;조건희
    • 전기전자학회논문지
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    • 제27권1호
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    • pp.12-18
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    • 2023
  • 각각의 큐빗(qubit)을 개별적으로 상온의 제어 회로에 연결하는 현재의 회로 기술은 양자 컴퓨터의 확장성, 신뢰성을 갖추는 데 있어 한계를 가지고 있으며, 집적도 측면에서 극저온의 CMOS 기술 기반 인터커넥트 회로 기술을 통해 기존 기술 대비 인터커넥트의 복잡도, 시스템 안정도 및 사이즈, 그리고 가격 경쟁력을 획기적으로 개선할 수 있을 것으로 기대되고 있다. 외부의 전기적 자극에 민감하며 양자 상태를 일정 시간 이상 유지할 수 없는 큐빗의 특성으로 인한 문제를 극복하고, 확장성과 신뢰성을 양자 컴퓨터 실현을 위한 CMOS 기술 기반 집적화된 센싱 및 제어 회로 기술에 대해 소개한다.

전압에 의하여 구동 가능한 12-Laser Diode Array의 광통신에의 응용 (Application of Voltage-Controlled 12-Laser Diode Array in the Optical Fiber Communication)

  • 이상신;지윤규
    • 대한전자공학회논문지
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    • 제27권11호
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    • pp.1-8
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    • 1990
  • 4개의 Quantum well을 갖는 GRINSCH InGaAs/Inp Buried Heterostructure의 laser diode 12개로 구성되어 있는 12-laser diode array를 제작하여, 각 laser diode의 전자 흡수 영역의 인가 전압에 의하여 lasing 작용을 조절할 수 있는 가능성을 조사하였다. 12개의 V가 홈을 갖는 Si V-groove와 12개의 광섬유를 이용하여 12-laser diode array의 빛출력을 coupling하여 전자 흡수영역의 인가 전압의 변화에 따른 각 laser diode의 여러특성을 조사하였다. 마지막으로 12-laser diode array와 Si V-Groove와 광섬유를 이용하여 디지털 논리 gate들로 구성되어 있는 전자 회로 board들 간의 광대역 근거리 통신 및 B-ISDN을 위한 central office와 가입자 간의 통신을 구현하는 방법에 대하여 생각해 보았다.

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On the comparison of mean object size in M/G/1/PS model and M/BP/1 model for web service

  • Lee, Yongjin
    • International Journal of Internet, Broadcasting and Communication
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    • 제14권3호
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    • pp.1-7
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    • 2022
  • This paper aims to compare the mean object size of M/G/1/PS model with that of M/BP/1 model used in the web service. The mean object size is one of important measure to control and manage web service economically. M/G/1/PS model utilizes the processor sharing in which CPU rotates in round-robin order giving time quantum to multiple tasks. M/BP/1 model uses the Bounded Pareto distribution to describe the web service according to file size. We may infer that the mean waiting latencies of M/G/1/PS and M/BP/1 model are equal to the mean waiting latency of the deterministic model using the round robin scheduling with the time quantum. Based on the inference, we can find the mean object size of M/G/1/PS model and M/BP/1 model, respectively. Numerical experiments show that when the system load is smaller than the medium, the mean object sizes of the M/G/1/PS model and the M/BP/1 model become the same. In particular, when the shaping parameter is 1.5 and the lower and upper bound of the file size is small in the M/BP/1 model, the mean object sizes of M/G/1/PS model and M/BP/1 model are the same. These results confirm that it is beneficial to use a small file size in a web service.

Identity-Based Key Management Scheme for Smart Grid over Lattice

  • Wangke, Yu;Shuhua, Wang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제17권1호
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    • pp.74-96
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    • 2023
  • At present, the smart grid has become one of the indispensable infrastructures in people's lives. As a commonly used communication method, wireless communication is gradually, being widely used in smart grid systems due to its convenient deployment and wide range of serious challenges to security. For the insecurity of the schemes based on large integer factorization and discrete logarithm problem in the quantum environment, an identity-based key management scheme for smart grid over lattice is proposed. To assure the communication security, through constructing intra-cluster and inter-cluster multi-hop routing secure mechanism. The time parameter and identity information are introduced in the relying phase. Through using the symmetric cryptography algorithm to encrypt improve communication efficiency. Through output the authentication information with probability, the protocol makes the private key of the certification body no relation with the distribution of authentication information. Theoretic studies and figures show that the efficiency of keys can be authenticated, so the number of attacks, including masquerade, reply and message manipulation attacks can be resisted. The new scheme can not only increase the security, but also decrease the communication energy consumption.

Use of Self Assembled Monolayer in the Cathode/Organic Interface of Organic Light Emitting Devices for Enhancement of Electron Injection

  • Manna, U.;Kim, H.M.;Gowtham, M.;Yi, J.;Sohn, Sun-young;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1343-1346
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    • 2005
  • Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

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Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors

  • Mao, Ling-Feng
    • ETRI Journal
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    • 제44권3호
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    • pp.504-511
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    • 2022
  • Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

Single-bit digital comparator circuit design using quantum-dot cellular automata nanotechnology

  • Vijay Kumar Sharma
    • ETRI Journal
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    • 제45권3호
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    • pp.534-542
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    • 2023
  • The large amount of secondary effects in complementary metal-oxide-semiconductor technology limits its application in the ultra-nanoscale region. Circuit designers explore a new technology for the ultra-nanoscale region, which is the quantum-dot cellular automata (QCA). Low-energy dissipation, high speed, and area efficiency are the key features of the QCA technology. This research proposes a novel, low-complexity, QCA-based one-bit digital comparator circuit for the ultra-nanoscale region. The performance of the proposed comparator circuit is presented in detail in this paper and compared with that of existing designs. The proposed QCA structure for the comparator circuit only consists of 19 QCA cells with two clock phases. QCA Designer-E and QCA Pro tools are applied to estimate the total energy dissipation. The proposed comparator saves 24.00% QCA cells, 25.00% cell area, 37.50% layout cost, and 78.11% energy dissipation compared with the best reported similar design.

Hybrid Resource Allocation Scheme in Secure Intelligent Reflecting Surface-Assisted IoT

  • Su, Yumeng;Gao, Hongyuan;Zhang, Shibo
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제16권10호
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    • pp.3256-3274
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    • 2022
  • With the rapid development of information and communications technology, the construction of efficient, reliable, and safe Internet of Things (IoT) is an inevitable trend in order to meet high-quality demands for the forthcoming 6G communications. In this paper, we study a secure intelligent reflecting surface (IRS)-assisted IoT system where malicious eavesdropper trying to sniff out the desired information from the transmission links between the IRS and legitimate IoT devices. We discuss the system overall performance and propose a hybrid resource allocation scheme for maximizing the secrecy capacity and secrecy energy efficiency. In order to achieve the trade-off between transmission reliability, communication security, and energy efficiency, we develop a quantum-inspired marine predator algorithm (QMPA) for realizing rational configuration of system resources and prevent from eavesdropping. Simulation results demonstrate the superiority of the QMPA over other strategies. It is also indicated that proper IRS deployment and power allocation are beneficial for the enhancement of system overall capacity.

Effect of p-type a-SiO:H buffer layer at the interface of TCO and p-type layer in hydrogenated amorphous silicon solar cells

  • Kim, Youngkuk;Iftiquar, S.M.;Park, Jinjoo;Lee, Jeongchul;Yi, Junsin
    • Journal of Ceramic Processing Research
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    • 제13권spc2호
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    • pp.336-340
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    • 2012
  • Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.