• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.123-126
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• 2003

RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32％.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1670-1676
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• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

• Journal of the Optical Society of Korea
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• v.8 no.4
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• pp.163-167
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• 2004

We propose and demonstrate an external optical modulation method based on TE/TM-mode absorption nulls in a Multiple Quantum Well(MQW) Fabry-Perot laser diode(FP-LD). The center wavelength of the absorption nulls is rapidly shifted to short-wavelength by the small current change(~1mA) in the FP-LD, which can modulate an optical signal with more than 10 dB of extinction ratio(ER). The shift of the center wavelength comes from the refractive index change due to anomalous dispersion and the plasma effect in MQW FP-LD waveguide. Non-inverting and inverting signals are made by TE- and TM-mode absorption nulls at 155.52 Mbps and BERs for the signals are measured.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.14-17
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• 2007

Magnetic properties of transition metal doped $La_{0.5}Ca_{0.5}(Mn_{0.98}TM_{0.02})O_3$(TM=Cr and Ti) are studied. The samples are synthesized by the conventional solid-state method. Using vibrating sample magnetometer magnetization-temperature measurement were carried out with zero field cooling and field cooling at 50 Oe. Cr-doped sample shows cluster or spin glass like behavior while Ti doped does not. Curie temperature obtained were decreased from that of LCMO(245.5 K). Curie temperatures of Cr-doped and Ti-doped samples are 235.5 K and 232.7 K, respectively. The temperature-dependent coercivity $H_c(T)$ was also measured. The coercive force continuously decreases with the substitution of Cr and Ti, The result can be understood in terms of the interaction between defect and domain wall.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.725-728
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• 2011

Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of EL2 centers was to be expected in the immediate vicinity of the dislocations. More recent work indicates that contrary to the expected behavior the photoqu$\acute{e}$nching of transmission images at T=80K does not appreciably change the image structure itself but more largely the uniform background level of absorption. Such investigations show that the transmission images of isolated dislocations (Indium doped materials) or cell structures of tangled dislocations (undoped materials) can be partly attributed to scattered light; similar operation at T=10K removes the dark features associated to EL2 but still preserves the skeleton of the pattern which is due to scattering. A result of the measurements is that dislocations must not be considered any longer as inexhaustive EL2 reservoirs. The lifetime of the photoqu$\acute{e}$nching mechanism is shown to vary differently for EL2 centers located close to the dislocations or in the matrix. In this paper we will develop the details of infrared image photoqu$\acute{e}$nching experiments in the vicinity of dislocations; undoped and In doped GaAs materials will be shown. These results will be discussed in the light of surface etching experiments.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.16 no.1
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• pp.3-12
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• 2006

We propose a direct communication protocol using entanglement swapping. The safety of this protocol is guaranteed by the basic properties of entanglement swapping. This protocol is efficient to transmit two classical bits of information per one session. This efficiency is better than that of ping-pong protocol suggested by Bostrom and Felbinger. Even if an eavesdropper intervenes in midway, the eavesdropper will be detected with the probability of $75\%$ in the verification process of one bit. Therefore the perfect security is guaranteed if we use enough amount of bits for the verification process.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.314-314
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• 2016

In this paper, the effects of carrier concentration on dielectric constant of ITO films were investigated by spectroscopic ellipsometry. From SE results, we find the pronounced shift of the ${\varepsilon}1$ peaks toward high energy with concentration; while contrarily, the ${\varepsilon}2$ values at low energy region increases with decreasing concentration. These shifts are attributed to the Burstein-Moss and free-carrier absorption effects within ITO films. With increases carrier concentration, the values of extinction coefficients show quite different behaviors in range of wavelength from 200 to 1200 nm. The reduction in k at ${\lambda}{\leq}500nm$, while increasing at ${\lambda}{\geq}500nm$ was observed. The QE of HJ solar cells behaviors can be roughly classified into two regions: short-wavelengths (${\leq}650nm$) and long-wavelengths region (${\geq}650nm$). With increasing carrier concentration as well as energy band gap, QE shows improvement at short-wavelength, while at long-wavelength QE shows opposite trend. Widening band gap energy due to Burstein-Moss shift is the key to improve QE in short-wavelength; simultaneously FCA effect due to optical scattering is attributed to the reduction in QE at long-wavelength. In spite of band gap extension, Jsc calculated from QE decreases from 34.7 mA/cm2 to 33.2 mA/cm2 with increasing carrier concentration. It demonstrated that FCA effect may more govern Jsc in the HJ solar cells.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.1
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• pp.101-108
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• 2017

As the quantum gate matrix is a $r^{n+1}{\times}r^{n+1}$ dimension when the radix is r, the number of control state vectors is n, and the number of target state vectors is one, the matrix dimension with increasing n is exponentially increasing. If the number of control state vectors is $2^n$, then the number of $2^n-1$ unit matrix operations preserves the output from the input, and only one can be performed the unitary operation to the target state vector. Therefore, this paper proposes a new method of function embedding that can replace $2^n-1$ times of unit matrix operations with deterministic contribution to matrix dimension by arithmetic power switch of the unitary gate. The proposed function embedding method uses a binary literal switch with a multivalued threshold, so that a general purpose hybrid MCU gate can be realized in a $r{\times}r$ unitary matrix.