• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.900-909
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• 2018

A $ZnO/TiO_2$ photocatalyst decorated with PbS quantum dots (QDs) was synthesized to achieve high photocatalytic efficiency for the decomposition of dye in aqueous media. A $TiO_2$ porous layer, as a precursor photocatalyst, was fabricated using micro-arc oxidation, and exhibited irregular porous cells with anatase and rutile crystalline structures. Then, a ZnO-deposited $TiO_2$ catalyst was fabricated using a zinc acetate solution, and PbS QDs were uniformly deposited on the surface of the $ZnO/TiO_2$ photocatalyst using the successive ionic layer adsorption and reaction (SILAR) technique. For the PbS $QDs/ZnO/TiO_2$ photocatalyst, ZnO and PbS nanoparticles are uniformly precipitated on the $TiO_2$ surface. However, the diameters of the PbS particles were very fine, and their shape and distribution were relatively more homogeneous compared to the ZnO particles on the $TiO_2$ surface. The PbS QDs on the $TiO_2$ surface can induce changes in band gap energy due to the quantum confinement effect. The effective band gap of the PbS QDs was calculated to be 1.43 eV. To evaluate their photocatalytic properties, Aniline blue decomposition tests were performed. The presence of ZnO and PbS nanoparticles on the $TiO_2$ catalysts enhanced photoactivity by improving the absorption of visible light. The PbS $QDs/ZnO/TiO_2$ heterojunction photocatalyst showed a higher Aniline blue decomposition rate and photocatalytic activity, due to the quantum size effect of the PbS nanoparticles, and the more efficient transport of charge carriers.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.640-644
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• 2008

ZnO/ZnS core/shell nanocrystals (${\sim}5-7\;nm$ in diameter) with a size close to the quantum confinement regime were successfully synthesized using polyol and thermolysis. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) analyses reveal that they exist in a highly crystalline wurtzite structure. The ZnO/ZnS nanocrystals show significantly enhanced UV-light emission (${\sim}384\;nm$) due to effective surface passivation of the ZnO core, whereas the emission of green light (${\sim}550\;nm$) was almost negligible. They also showed slight photoluminescence (PL) red-shift, which is possibly due to further growth of the ZnO core and/or the extension of the electron wave function to the shell. The ZnO/ZnS core/shell nanocrystals demonstrate strong potential for use as low-cost UV-light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.1-8
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• 1990

We made a 12-Laser Diode Array consisting of 12 Graded Index Separate Confinement (GRINSCH) InGaAs/Inp Buried Heterostructure 4 Quantum Well Laser Diodes and examined the potential of controlling lasing operation of each laser diode by the voltage to its electroabsorption region. Using Si V-Groove with 12 V-grooves, a 12-Laser Diode Array, and 12 optical fibers, we investigated the various characteristics of each laser diode by changing the voltage to its electro-absorption region. Finally, we thought over the promising way of implementing optical local area communication between electric circuit boards or between subscribers and a central office using a 12-Laser Diode Array, Si V-groove, and optical fibers.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.10
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• pp.43-50
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• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.42-47
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• 2000

Long-wavelength infrared (LWIR) detectors made of self-assembled quantum dots embedded in the channel region of high electron mobility transistor (HEMT) is demonstrated. Above 180 K, the detector shows low dark currents due to strong confinement effect of electrons in InAs quantum dots and exhibits the broad spectral response ranging from 7 mm to 11 mm. The peak detectivity ($D^*$) of $1.93{\times}10^{10}cmHz^{1/2}/W$ is obtained at 9.4 mm. The photocurrent characteristics as a function of applied bias are similar to that of normal FETs, while the photocurrent decreases as the applied electric field exceeds $2{\times}10^3V/cm$ because of the increased dark current.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.525-528
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• 2004

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in $SiO_2$ is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.272-279
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• 1996

A simple transfer matrix algorithm to analyze the properties of 2 dimensional waveguides is introduced. We applied this algorithm to strained InGaAs/InGaAsP GINSCH MQW laser structures. We studied how optical confinement factor and effective refractive index, which are important in calculating the modal gain, depend on the structure parameters such as waveguide width, shape of GRIN, and number of quantum wells. Especially we suggested that the concept of effective waveguide width is very useful in understanding the GRINSCH waveguide.