• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• 통합자연과학논문집
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• 제8권3호
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• pp.147-152
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• 2015

Photoluminescent porous silicon (PSi) were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 620 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon nanocrystal in porous silicon. As-prepared PSi was sonicated, fractured, and centrifuged in toluene to obtain photoluminescence silicon quantum dots. BET and BHJ methods were employed to study the specific surface area of as-prepared PSi. Optical characterization of red photoluminescent silicon nanocrystal was investigated by UV-vis and fluorescence spectrometer. Also SEM and TEM images of porous silicon and nanoparticles were investigated.

• 대한전자공학회논문지TE
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• 제37권5호
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• pp.17-27
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• 2000

SCH 양자우물 레이저에서 수치적 모델을 이용하여 캐리어의 양자우물 subband 점유에 따른 광 이득, 광 미분 이득과 재결합 전류를 계산하고, 이를 해석적 캐리어 포획 및 탈출 모델과 연계하여 양자우물 주입 전류와 SCH bulk 캐리어의 관계를 도출하였다. 이를 토대로 SCH 영역과 양자우물의 캐리어 비율과 전류 비율을 얻고, 이에 따른 광 이득과 광 미분 이득의 변화를 고찰하였다.

• 전자통신동향분석
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• 제3권4호
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• pp.3-12
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• 1988

Epilayer growing process has been recognized as a key technology for successful GaAs based devices and integrations. These may include HEMT, multiple quantum well structures, band gap engineering, and quantum confinement heterostructures. The fabrication of epilayers in these devices must meet very stringent requirements in terms of crystallinity, composition, film thickness and interface quality. In particular, the quality of interfaces is getting more important because the film thickness, and flatness, roughness and stability at interface of ultrathin films cause critical effects on the device performance. This article reviews the current status of modern epitaxial techniques which have been developed in the last few years. First, the new techniques PLE, GI, MEE, TSL based on MBE technique will be reviewed and their technical importance will be stressed. Secondly, MOMBE, GSMBE, CBE which combine the advantages of MBE and MOCVD will also be discussed. Thirdly, the new sophisticated epitaxial technique, ALE, of which mechanism is totally different from others, will also be reviewed. Finally, areas which should be exploited more extensively to accomplish these techniques will be addressed.

• 한국진공학회지
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• 제7권s1호
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• pp.25-29
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• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• Nano
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• 제13권10호
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• pp.1850114.1-1850114.7
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• 2018

Here we report an optimized hot-injection method and a phase transfer strategy for the synthesis of water-soluble $CuInS_2$ QDs with desired properties. The structure and morphology studies demonstrate that the resulting QDs are $CuInS_2$ tetragonal phase with well-defined facets. It is also found that the crystal size gradually increases with the increase of reaction temperature, while the surface of QDs with pre- and post-phase transfer is functionalized with hydrophobic and hydrophilic ligands, respectively. Spectroscopy measurements reveal the size-dependent optical properties of $CuInS_2$ QDs, demonstrating the quantum confinement effect in this system.

• 진공이야기
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• 제3권3호
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• pp.4-9
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• 2016

Nanowires have excellent properties such as high crystallinity, good mechanical properties, quantum confinement effect and high chemical activity, and thus are promising building blocks for many applications. Here we firstly review the fabrication of nanowires by top-down and bottom-up process. We then review nanowires as building blocks for bio applications including bio sensing, cell signaling and cell stimulating. It shows that nanowires are promising for the development of advanced bio technologies that can address ultrahigh sensitivity, and long term cell signaling and stimulating without cell damages.

• 전자공학회논문지D
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• 제36D권3호
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• pp.75-84
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• 1999

주입전류가 문턱전류 이상일 때 선폭증가계수, 구속계수, 내부손실과 레이저의 길이가 λ/4 위상천이 DFB레이저의 단일모드 이득차와 발진주파수의 변화에 미치는 영향에 대하여 체계적으로 연구하였다. 구속계수나 선폭증가계수와 구속계수의 곱으로 주어지는 변수보다 선폭증가계수가 단일모드 이득차 및 발진주파수에 미치는 영향이 크다. 내부손실이나 레이저 길이 각각의 값보다 내부손실과 레이저 길이의 곱으로 정의되는 정규화된 내부손실이 DFB 레이저의 단일모드 이득차 및 발진주파수의 변화에 미치는 영향이 크다. 정규화된 내부손실이 같은 경우에는 내부손실계수보다 레이저의 길이가 동작특성에 미치는 영향이 큼을 알 수 있었다. 또한 양자우물 레이저가 builk 레이저에 비하여 선폭증가계수가 작기 때문에 구속계수와 정규화된 내부손실 값의 변화에 따른 단일모드 이득차의 감소와 발진주파수의 변화가 작음을 보았다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.163-166
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• 2009

다중접합 초 고효율 태양전지 제조를 위해 SiC 매트릭스를 이용한 실리콘 양자점 초격자 박막을 제조하고 특성을 분석하였다. $SiC/Si_{1-x}C_x$(x ~ 0.31)로 실리콘 양자점 초격자 박막을 Si과 C target을 이용한 co-sputtering법으로 초격자 박막을 제조하고, $1000^{\circ}C$에서 20분간 열처리를 하였다. high resolution transmission electron microscopy 사진으로 약1~7nm 크기인 양자점 생성과 분포 밀도를 확인할 수 있었으며, grazing incident X-ray diffraction (GIXRD)를 통해서 Si(111)과 $\beta$-SiC(111)이 생성되었음을 알 수 있었다. Auger electron spectroscopy (AES)측정에서 stoichiometric SiC층과 Si-rich SiC층의 Si 원자농도 (56%, 69%)와 C 원자 농도 (44%, 31%)를 알 수 있었으며, Fourier transform infra-red spectroscopy (FTIR)측정에서 SiC 픽의 위치가 767에서 $800cm^{-1}$으로 이동하는 것을 알 수 있었다.