1 |
G.P. Kothiyal, S. Hong, N. Debbar, P.K. Bhattacharya, J. Singh, Appl. Phys. Lett. 51 (1987), p1091.
DOI
|
2 |
D.J. Aren, K. Deneffe, C. Van Hoof, J. De Broeck, G. Borfhs, In band structure engineering of semiconductor microstructure, in: R.A. Abram, M. Jacos (Eds.), NATO ARW Series, vol. 189, Plenum, New York, 1988.
|
3 |
S.H. Pan, H. Shen, Z. Hang, F.H. Pollak, A.P. Roth, D. Morris, Phys. Rev. B 38 (1988), p 3375.
DOI
ScienceOn
|
4 |
B.G. Orr, D. Kessler. C.W. Snyder, L. Sander, Europhys. Len. 19 (1992), p33.
DOI
ScienceOn
|
5 |
D. Leonard, K. Pond, P.M. Petroft, Phys. Rev. B 50 (1994), p11687.
DOI
ScienceOn
|
6 |
S.P. DenBaars, C.M. Reaves, V. Bressler-Hill, S. Varma, W.H. Weinberg, P.M. Petroff, J. Cryst. Growth 145(1994), p 721.
DOI
ScienceOn
|
7 |
R.L. Harper Jr., R.N. Bicknell, D.K. Blanks, N.C. Giles, J.F. Schetzina, Y.R. Lee, A.K. Ramdas, J. Appl. Phys. 65 (1989), p624.
DOI
|
8 |
A. Poliment, A. Patane, M. Henini, L. Eaves, P.C. Main, Phys. Rev. B 59 (1999), p5064.
DOI
ScienceOn
|
9 |
A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, M.V. Maximov, Z.I. Alferov, N.N. Ledentsov, D. Bimberg,Appl. Phys. Lett. 75 (1999), p1926.
DOI
|
10 |
K.S. Stevens, M. Kinninburgh and R. Beresford, Appl. Phys. Lett. 66 (1995), p3518.
DOI
ScienceOn
|
11 |
J.M. Gerard, J.B. Genin, J. Lefebvre, J.M. Moison, N. Lebouche and F. Barthe, J. Cryst. Growth 150 (1995), p351.
DOI
ScienceOn
|
12 |
M. Zachau, P. Helgesen, F. Koch, D. Grutzmacher, R. Meyer and P. Balk, Sernicond. Sci. Technol. 3 (1988), p 1029.
DOI
ScienceOn
|