• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.343-344
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• 2012

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.367-370
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• 2016

QFN(Quad Flat No-leads package) is one of the SMD(Surface Mount Device). Since there is no lead in QFN, there are many defects on solder. Therefore, we propose an efficient mechanism for QFN solder defect detection at this paper. For this, we employ Convolutional Neural Network(CNN) of the Machine Learning algorithm. QFN solder's color multi-layer images are used to train CNN. Since these images are 3-channel color images, they have a problem with applying to CNN. To solve this problem, we used each 1-channel grayscale image(Red, Blue, Green) that was separated from 3-channel color images. We were able to detect QFN solder defects by using this CNN. Later, further research is needed to detect other QFN.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.18-23
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• 2016

QFN (Quad Flat No-leads Package) is one of the SMD (Surface Mount Device). Since there is no lead in QFN, there are many defects on solder. Therefore, we propose an efficient mechanism for QFN solder defect detection at this paper. For this, we employ Convolutional Neural Network (CNN) of the Machine Learning algorithm. QFN solder's color multi-layer images are used to train CNN. Since these images are 3-channel color images, they have a problem with applying to CNN. To solve this problem, we used each 1-channel grayscale image (Red, Green, Blue) that was separated from 3-channel color images. We were able to detect QFN solder defects by using this CNN. In this paper, it is shown that the CNN is superior to the conventional multi-layer neural networks in detecting QFN solder defects. Later, further research is needed to detect other QFN.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.9
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• pp.899-905
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• 2009

There are many different types of surface defects on semiconductor Integrated Chips (IC's) caused by various factors during manufacturing process, such as Scratch, Flash, Resin bleed, and Melting. These defects must be detected and classified by an inspection system for productivity improvement and effective process control. Among defects, in particular, Resin bleed and Melting are the most difficult ones to classify accurately. The brightness value and the shape of Resin bleed and Melting defects are so similar that normally it is difficult to classify the Resin bleed and Melting. In this paper, we propose a segmenting method and a set of features for detecting and classifying the Resin bleed and Melting defects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• Journal of the Institute of Convergence Signal Processing
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• v.10 no.2
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• pp.120-126
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• 2009

There are many different types of surface defects on semiconductor Integrated Chips (IC's) caused by various factors during manufacturing process, such as cracks, foreign materials, chip-outs, chips, and voids. These defects must be detected and classified by an inspection system for productivity improvement and effective process control. Among defects, in particular, foreign materials and chips are the most difficult ones to classify accurately. A vision system composed of a carefully designed optical system and a processing algorithm is proposed to detect and classify the defects on QFN(Quad Flat No-leads) packages. The processing algorithm uses features derived from the defect's position and brightness value in the Maximum Likelihood classifier and the optical system is designed to effectively extract the features used in the classifier. In experiments we confirm that this method gives more effective result in classifying foreign materials and chips.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.12
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• pp.2503-2510
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• 2015

This paper presents a single-phase energy measurement IC to measure electric power quantities. The entire IC includes two programmable gain amplifiers (PGAs), two ${\sum}{\Delta}$ modulators, a reference circuit, a low-dropout (LDO) regulator, a temperature sensor, a filter unit, a computation engine, a calibration control unit, registers, and an external interface block. The proposed energy measurement IC is fabricated with $0.18-{\mu}m$ CMOS technology and housed in a 32-pin quad-flat no-leads (QFN) package. It operates at a clock speed of 4,096 kHz and consumes 10 mW in 3.3 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.108-114
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• 2016

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.8
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• pp.3103-3120
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• 2015

This paper presents a single-phase energy metering chip with built-in calibration function to measure electric power quantities. The entire chip consists of an analog front end, a filter block, a computation engine, a calibration engine, and an external interface block. The key design issues are how to reduce the implementation costs of the computation engine from repeatedly used arithmetic operations and how to simplify calibration procedure and reduce calibration time. The proposed energy metering chip simplifies the computation engine using time-division multiplexed arithmetic units. It also provides a simple and fast calibration scheme by using integrated digital calibration functionality. The chip is fabricated with 0.18-μm six-layer metal CMOS process and housed in a 32-pin quad-flat no-leads (QFN) package. It operates at a clock speed of 4096 kHz and consumes 9.84 mW in 3.3 V supply.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.295-301
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• 2011

A triple-band transceiver module for 2.3/2.5/3.5 GHz mobile WiMAX, IEEE 802.16e, applications is introduced. The suggested transceiver module consists of RFIC, reconfigurable/multi-resonance MIMO antenna, embedded PCB, mobile WiMAX base band, memory and channel selection front-end module. The RFIC is fabricated in $0.13{\mu}m$ RF CMOS process and has 3.5 dB noise figure(NF) of receiver and 1 dBm maximum power of transmitter with 68-pin QFN package, $8{\times}8\;mm^2$ area. The area reduction of transceiver module is achieved by using embedded PCB which decreases area by 9% of the area of transceiver module with normal PCB. The developed triple-band mobile WiMAX transceiver module is tested by performing radio conformance test(RCT) and measuring carrier to interference plus noise ratio (CINR) and received signal strength indication (RSSI) in each 2.3/2.5/3.5 GHz frequency.