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http://dx.doi.org/10.5515/KJKIEES.2016.27.2.108

Design of a 2.6 GHz GaN-HEMT Doherty Power Amplifier IC for Small-Cell Base Station Systems  

Lee, Hwiseob (School of Information and Communication Engineering, Sungkyunkwan University)
Lim, Wonseob (School of Information and Communication Engineering, Sungkyunkwan University)
Kang, Hyunuk (School of Information and Communication Engineering, Sungkyunkwan University)
Lee, Wooseok (School of Information and Communication Engineering, Sungkyunkwan University)
Lee, Hyoungjun (Wave Electronics Co., Ltd.)
Yoon, Jeongsang (Wave Electronics Co., Ltd.)
Lee, Dongwoo (Wave Electronics Co., Ltd.)
Yang, Youngoo (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.27, no.2, 2016 , pp. 108-114 More about this Journal
Abstract
This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.
Keywords
GaN-HEMT; Doherty Power Amplifier; Small-Cell Base Station; LTE;
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Times Cited By KSCI : 2  (Citation Analysis)
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