• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 2004.07a
• /
• pp.317-317
• /
• 2004

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 2004.07a
• /
• pp.310-310
• /
• 2004

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.6 s.360
• /
• pp.60-68
• /
• 2007

A technique is presented to extract differential second harmonic output from common source nodes of a cross-coupled P-& N-FET oscillator. Provided the impedances at the common source nodes are optimized and the fundamental swing at the VCO core stays in a proper mode, it is found that the amplitude and phase errors can be kept within $0{\sim}1.6dB$ and $+2.2^{\circ}{\sim}-5.6^{\circ}$, respectively, over all process/temperature/voltage corners. Moreover, an impedance-tuning circuit is proposed to compensate any unexpectedly high errors on the differential signal output. A Prototype 5-GHz VCO with a 2.5-Hz LC resonator is implemented in $0.18-{\mu}m$ CMOS. The error signal between the differential outputs has been measured to be as low as -70 dBm with the aid of the tuning circuit. It implies the push-push outputs are satisfactorily differential with the amplitude and phase errors well less than 0.34 dB and $1^{\circ}$, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.131-137
• /
• 2014

A 120 GHz voltage controlled oscillator (VCO) with a divider chain including an injection locked frequency divider (ILFD) and six static frequency dividers is demonstrated using 65-nm CMOS technology. The VCO is designed based on the LC cross-coupled push-push structure and operates around 120 GHz. The 60 GHz ILFD at the first stage of the frequency divider chain is based on a similar topology as the core of the VCO to ensure the frequency alignment between the two circuit blocks. The static divider chain is composed of D-flip flops, providing a 64 division ratio. The entire circuit consumes a DC power of 68.5 mW with the chip size of $1385{\times}835{\mu}m^2$.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.13 no.3
• /
• pp.239-254
• /
• 1988

In this paper an exciter which performs modulation and amplification is composed of high power(30dBm) VCO(Voltage Controlled Oscillator) using push-pull circuit. Modulation is FSK using PLL(Phase Locked Loop). A single loop PLL synthesizer having sequency range of 42.5-100.5MHz, 25KHz channel spacing and switching time of 1msec converts down the exciter VCO frequency to 1.25MHz. This signal mixed with the FSK modulated signal coming in the phase detector of exciter. The acquisition time of exciter for frequency hoppng is less than 200usec, so the total acquisition time for transmission is less that 1.5msec. There is no need of additional power amplification because power amlifiction by high power VCO is high enough to communicate within near distance. The proposed frequency synthesizer is not complex so it is suitable for low cost slow frequency hopping spread spectrum communication.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.2
• /
• pp.44-52
• /
• 2002

본 논문에서는 RF와 마이크로파 응용을 위한 MEMS 수동 소자에 대한 내용이다. 이 수동 소자들을 만들기 위해서 개발된 3타원 MEMS공정은 기존의 실리콘 공정과 완전한 호환성을 가지고 한 칩으로 집적화 시킬 수 있는 공정이다. 이 3차원 MEMS 공정은 기존 실리콘 긍정이 가지고 있는 한계를 극복하기 위한 방법으로써 개발되었다. 개발된 공정을 이용하여 실리콘 공정에서 구현할 수 없었던 좋은 성능의 인덕터, 트랜스포머 및 전송선을 RF와 마이크로파 응용을 위해서 구현하였다. 저 전압, 높은 차단율을 위한 push-pull 개념을 도입한 MEMS 스위치를 구현하였다. 또한 높은 Q를 갖는 MEMS 인덕터를 최초로 CMOS 칩과 집적화에 성공하여 600kHz 옵셋 주파수에서 -122 dBc/Hz의 특성을 갖는 2.6 GHz 전압 제어 발진기를 제작하였다.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.12
• /
• pp.83-89
• /
• 2014

A ku-band complementary cross-coupled differential voltage controlled oscillator is designed, measured and fabricated using $0.18-{\mu}m$ CMOS technology. A 2.4GHz of very wide frequency tuning at oscillating frequency of 14.5GHz is achieved with presented circuit topology and MOS varactors. Measurement results show -1.66dBm output power with 18mA DC current drive from 3.3V power supply. When 5V is applied, the output power is increased to 0.84dBm with 47mA DC current. -74.5dBc/Hz phase noise at 100kHz offset is measured. The die area is $1.02mm{\times}0.66mm$.