• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.204-209
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• 2017

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1023_1024
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• 2009

In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.88-99
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1910-1912
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• 1996

This paper presents the results of laboratory experimentals to remove $SO_2$ and $NO_x$ by a pulsed corona discharge in the wire-plate reactor. A rotating spark gap switch was used to generate the pulse by chewing the dc high voltage. Repetition frequency of the pulse was 60Hz and rising time of 50ns. The photo pictures of positive streamer corona taken by ICCD camera, pulse voltage and current were measured using a digital oscilloscope. Simultaneous effects of $C_{2}H_{4}$ injection and heterogeneous chemical reactions on nonthermal plasma process to remove $SO_2$ and $NO_x$ from flue gas were investigated in the present study

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• Journal of Electrical Engineering and information Science
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• v.3 no.3
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• pp.316-321
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• 1998

In recent years, concern has been raised about the technique of controlling electrical breakdown by using laser in many fields. Especially, laser has attracted much attention in the Electro-Discharge Macining(EDM) because of its many merits. Therefore, this research has been performed to obtain fundamental data relevant to discharge processing by using a pulsed Nd:YAG laser. The experiments of laser-guided dc discharge by laser radiation have been carried out at low air pressure ranging from 0.2 to 20 torr. The minimum laser-guided dc discharge voltage V\ulcorner at the given pressures P and distances D between an anode and a cathode was measured. It is found that the minimum laser-guided dc discharge voltage is much lower than the natural discharge voltage V\ulcorner\ulcorner, and the values of V\ulcorner and V\ulcorner as a function of P.D has a similar tendency. The laser output energy Eout decreases with input pulse duration tp increasing, and the more the value of tp increases, the higher that of V\ulcorner is obtained because the number of photons during the discharge time N decreases with t\ulcorner increasing. There is the time lag frequently when the discharge by laser radiation is misguided under the condition of the applied voltage less than V_G.min.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.980-986
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• 2001

Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

• IMMUNE NETWORK
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• v.6 no.3
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• pp.154-162
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• 2006

Background: Dendritic cell (DC)-based cancer immunotherapy is studied for several years. However, it is mainly derived from autologous PBMC or leukapheresis from patient, which has limitations about yield and ability of DC production according to individual status. In order to solve these problems, inquiries about allogeneic DCs are performed but there are no preclinical trial answers for effect or toxicity of allogeneic DC to use for clinical trial. In this study, we compared the anti-tumor effect of allogeneic and autologous DCs from mouse bone marrow stem cells in mouse metastatic melanoma model. Methods: B16F10 melanoma cells ($5{\times}10^4$/mouse) were injected intravenously into the C57BL/6 mouse. Therapeutic DCs were differentiated from autologous (C57BL/6: CDC) or allogeneic (B6C3F1: BDC) bone marrow stem cells with GM-CSF, SCF and IL-4 for 13days and pulsed with B16F10 tumor cell lysate (Blys) for 18hrs. DC intra-peritoneal injections began on the 8th day after the tumor cell injection by twice with one week interval. Results: Anti-tumor response was observed by DC treatment without any toxicity especially in allogeneic DC treated mice (tumor burden score: $2.667{\pm}0.184,\;2.500{\pm}0.463,\;2.000{\pm}0.286,\;1.500{\pm}0.286,\;1.667 {\pm}0.297$ for saline, CDC/unpulsed-DC: U-DC, CDC/Blys-DC, BDC/U-DC and BDC/Blys-DC, respectively). IFN-${\gamma}$ secretion was significantly increased in allogeneic DC group stimulated with B16F10 cell lysate ($2,643.3{\pm}5,89.7,\;8,561.5{\pm}2,204.9.\;6,901.2{\pm}141.1pg/1{\times}10^6$ cells for saline, BDC/U-DC and BDC/Blys-DC, respectively) with increased NK cell activity. Conclusion: Conclusively, promising data was obtained that allogeneic DC can be used for DC-based cancer immunotherapy.