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http://dx.doi.org/10.4313/JKEM.2003.16.7.641

Formation of Dielectric Carbon Nitride Thin Films using a Pulsed Laser Ablation Combined with High Voltage Discharge Plasma  

김종일 (한국기술교육대학교 정보기술공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.7, 2003 , pp. 641-646 More about this Journal
Abstract
The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.
Keywords
High voltage discharge plasma; Dielectric carbon nitride thin film; Infrared spectroscopy(IR); X-ray diffraction(XRD);
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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