• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.388-391
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• 2008

A new reset waveform with negative ramp pulse was proposed. Comparative experiments between the negative and positive waveforms were performed. During reset period, IR distributions and luminance of black and white conditions were measured with the 42-inch XGA PDP module. The negative waveform improved contrast ratio about 15.4 ~ 22.5 % than the positive waveform by lowing the black luminance in reset period. Z bias (= Vbb) of the positive waveform was 27 V higher than the negative waveform.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.675-678
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• 2006

We developed a Flat Fluorescent Lamp(FFL) with a high luminance by using the same discharge mode as PDP. Our FFL has the simple and unique structure where the glass substrates are used as dielectric layers. The panel has a striped line shape of 7 inch diagonal size. The Xe-Ne-He mixture gas was used to generate the plasma, and the gas discharge characteristics under both total gas pressure and partial gas pressure were investigated. The panel showed a maximum high luminance $7,270cd/m^2$ under bias of 20KHz pulse of 3KV.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.158-158
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• 2009

TiN 코팅은 뛰어난 기계적 성질 및 내식성으로 산업전반에 걸쳐 널리 이용되고 있다. 본 연구에서는 비대칭 바이폴라 펄스 DC 반응성 마그네트론 장비를 이용하여 바이어스전압, 펄스주파수 및 Duty를 변화시키면서 TiN 박막을 제작하였다. 위와 같은 3가지 플라즈마 변수의 변화에 따른 TiN 박막의 결정 배향성 및 미세구조에 미치는 영향에 대해 주목하였다.

• Progress in Superconductivity
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• v.1 no.2
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• pp.105-109
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• 2000

We have designed and fabricated a single-flux-quantum(SFQ) four-stage shift register using YBCO bicrystal Josephson junctions, and tested its operations using a digital measurement set-up. The circuit consists of 4 shift register stages and a read SQUID placed next to each side of the shift register. Each SQUID was inductively coupled to the nearby shift register stage. The major obstacle in testing the circuits was the interference between the two read SQUIDs, and we could get over the problem by determining the correct operation points of the SQUID from the simultaneously measured modulation curves. Loaded data ('1' or '0') were successfully shifted from a stage to the next by a controlled current pulse injected to the bias lines located between the stages, and the corresponding correct data shifts were observed with the two read SQUIDs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Current Optics and Photonics
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• v.2 no.6
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• pp.508-513
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• 2018

We report the development of a theoretical model describing the strong field tunneling of electrons in an extremely small nanogap (having a width of a few nanometers) that is driven by terahertz-pulse irradiation, by modifying a conventional semiclassical model that is widely applied for near-infrared wavelengths. We demonstrate the effects of carrier-envelope phase difference and strength of the incident THz field on the tunneling current across the nanogap. Additionally, we show that the dc bias also contributes to the generation of tunneling current, but the nature of the contribution is completely different for different carrier-envelope phases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.883-891
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• 2013

In wireless smart phone charging scenario, the transmitter pad is larger than the size of the receiver pad. Thus, it is important to supply a constant power to the receiver regardless of its location. In this paper, we propose a new method to regulate the receiver's power by adjusting a drain bias of class E power amplifier. The proposed LF-band wireless power transfer system is as follows: a buck converter power supply which is controlled by a pulse width modulation(PWM) IC TL494, a class E amplifier using a low cost IRF510 power MOSFET, a transmitter coil whose dimension is $16cm{\times}18cm$, a receiver coil whose dimension is $6cm{\times}8cm$, and a full bridge rectifier using Schottky diodes. A measured performance show a maximum output power of 4 W and system efficiency of 67 % if we fix the bias voltage. If we adjust the bias voltage, the received power can be maintained at a constant power of 2 W regardless of receiver pad location.

• Journal of Korea Water Resources Association
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• v.41 no.4
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• pp.379-394
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• 2008

Recently, extreme precipitation events beyond design capacity of hydraulic system have been occurred and this is the causes of failure of hydraulic structure for flood prevention and of severe flood damage. Therefore it is very important to understand temporal and spatial characteristics of extreme precipitation events as well as expected changes in extreme precipitation events and distributional characteristics during design period under future climate change. In this paper, climate change scenarios were used to assess the impacts of future climate change on extreme precipitation. Furthermore, analysis of future extreme precipitation characteristics and I-D-F analysis were carried out. This study used SRES B2 greenhouse gas scenario and YONU CGCM to simulate climatic conditions from 2031 to 2050 and statistical downscaling method was applied to establish weather data from each of observation sites operated by the Korean Meteorological Administration. Then quantile mapping of bias correction methods was carried out by comparing the simulated data with observations for bias correction. In addition Modified Bartlett Lewis Rectangular Pulse(MBLRP) model (Onof and Wheater, 1993; Onof 2000) and adjust method were applied to transform daily precipitation time series data into hourly time series data. Finally, rainfall intensity, duration, and frequency were calculated to draw I-D-F curve. Although there are 66 observation sites in Korea, we consider here the results from only Seoul, Daegu, Jeonju, and Gwangju sites in this paper. From the results we found that the rainfall intensity will be increased and the bigger intensity will be occurred for longer rainfall duration when we compare the climate conditions of 2030s with present conditions.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.