Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Mode Locking of AlGaAs Semicondctor Laser Traveling Wave Amplifiers

AlGaAs 진행파 반도체 레이저 광증폭기의 모드록킹

  • 이창희 (한국전자통신연구소 광통신 연구실) ;
  • 강승구 (한국전자통신연구소 반도체실 연구실) ;
  • 정기웅 (금성중앙연구소 기초1실) ;
  • 임시종 (금성중앙연구소 기초1실) ;
  • 유태경 (금성중앙연구소 기초1실)
  • Published : 1995.01.01
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Abstract

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

Keywords