• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• 전력전자학회논문지
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• 제24권3호
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• pp.153-160
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• 2019

This study proposes a current source-type pulse generator to improve output voltage and current waveforms under a capacitively coupled plasma (CCP) system. The proposed circuit comprises two parallel-connected current source-type converters. These converters can satisfy the required output waveforms of plasma processing. The parallel-connected converters operate without reverse current fault by applying a time-delay control technique. Conventional voltage source converters based on pulse power supply exhibit drawbacks in short-circuit current, and problems occur when they are applied to a CCP system. The proposed pulse power supply based on a current source converter fundamentally solves the short-circuit current problem. Therefore, this topology can improve the voltage and current accuracy of a CCP system.

• 한국자동차공학회논문집
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• 제7권5호
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• pp.73-80
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• 1999

To decrease NOx and SOx using PPCP(Pulse-induced Plasma Chemical Process). This study is tried to obtain the relation and the basic data under the various conditions such the initial concentrations of NOx and SOx. The additional amount of hydrocarbon gases. The concentration of oxygen and input power etc. Especially, this study is focused on the effects of the additional hydrocarbon gases on the decrease of NOx and SOx.

• 한국표면공학회지
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• 제43권3호
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• pp.154-158
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• 2010

Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

• 전기학회논문지
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• 제56권11호
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• pp.2004-2009
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• 2007

A new high-speed drive method for the plasma display panel is proposed. In this method, the address period is inserted for the rest period of the sustain pulses and the priming pulse is applied on the entire panel at the same time overlapping with the sustain period. The ramp shaped priming pulse can be made with a simple drive circuit in this technology and the stable sustain discharge can be induced even by a narrow scan pulse in help of the space charge generated from the address discharge. From the experiments, it is ascertained that the priming pulse hardly influences the sustain discharge. Moreover, the voltage margin of the sustain discharge is almost constant though that of the address discharge broadens with narrowing the scan pulse width. And, if the time interval between the scan pulse and the sustain pulse is within $6{\mu}s$, the voltage margin of the address and the sustain discharges are unaffected though the applied position of the scan pulse is changed. High-speed driving with the address pulse of $0.7{\mu}s$ width was achieved and the address voltage margin of 20V and the sustain voltage margin of 10V were obtained.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.27-27
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• 2000

TDEAT precursor를 이용하여 DC-Pulse Plasma MOCVD 방법과 Thermal MOCVD 방법으로 각각 TiN 박막을 증착하였다. 본 논문에서는 DC-Pulse Plasma MOCVD 방 법으로 증착된 TiN 박막과 Therrnal MOCVD 방법으로 증착된 TiN 박막의 전기적 특성에 관하여 비교 분석하였다. 동일한 조건 하에서 각각의 방법으로 증착된 박막은 4-point probe를 이용하여 면저항을 측정하였고, XRD를 이용하여 박막의 성장방향을 관찰하였으며, FE-SEM을 이용하여 박막의 두께와 단면 사진, 표면형상을 관찰하였으며, AES depth profile을 통해 두께에 따른 Ti, N, 잔류 C와 0의 함량을 분석하였으며, XPS를 통해 C의 결합형태를 파악하고자 하였다. 분석결과 DC-Pulse Plasma MOCVD 방법으로 증착된 TiN 박막이 Thermal MOCVD 방법으로 증착된 TiN 박막에 비해 전기적 특성은 매우 우수하였으며, 치밀한 구조의 박막을 가지는 것으로 나타났다. 또한, 잔류 C, O의 함량이 낮은 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.176.2-176.2
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• 2013

Property of optical diagnostics for pulse-discharged plasma in liquid and its biological applications to proteins are investigated by making use of high voltage Marx generator. The Marx generator has been consisted of 5 stages, where each charging capacitor is 0.5 ${\mu}F$, to generate a high voltage pulse with rising time of $1{\mu}s$. We have applied an input voltage of 6 kV to the each capacitor of 0.5 ${\mu}F$. High voltage pulsed plasma has been generated inside a polycarbonate tube by a single-shot operation, where the breakdown voltage is measured to be 7 kV, current of 1.2 kA, and pulse width of ~ 1 ${\mu}s$ between the two electrodes of anode-cathode whose material is made of tungsten pin, which are immersed into the liquids. We have investigated the emitted hydrogen lines for optical diagnostics of high voltage pulsed plasma. The emission line of 656.3 nm from $H-{\alpha}$ and 486.1 nm from $H-{\beta}$ have been measured by a monochromator. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium conditions, the electron temperature and density of the high voltage pulsed plasma in liquid could be obtained by the Stark broadening of optical emission spectroscopy. For the investigation of the influence of pulsed plasma on biological proteins, we have exposed it onto the proteins such as hemoglobin and myoglobin. The structural changes in these proteins and their analysis have also been obtained by circular dichroism (CD) and ultraviolet (UV) visible spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

• 한국표면공학회지
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• 제34권5호
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• pp.395-402
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• 2001

An induction thermal plasma system have been newly designed for advanced operation with a pulse modulated mode to control the plasma power in time domain and to create non-equilibrium effects such as fast quenching of the plasma to produce new functional materials in high rate. The system consists of MOSFET power supply with a maximum power of 50 kW with a frequency of 460 kHz, an induction plasma torch with a 10-turns coil of 80 mm diameter and 150 mm length and a vacuum chamber. The pulse modulated plasma was successfully generated at a plasma power of 30 kW and a high pressure of 100 kPa, with taking the on and off time as 10 ms, respectively. Measurements were carried out on the time-dependent spectral lines emitted from Ar species. The dynamic behavior of plasma temperature in a pulse cycle was estimated by the Boltzmann plot and the excitation temperature of Ar atom was found to be changed periodically from around 0.5 to 1.7 eV during the cycle. Two application regions of the induction thermal plasma newly generated were introduced to material processing with high rate synthesis based on non equilibrium effects, and to the finding of new arc quenching gases coming necessary for power circuit breaker, which is friendly with earth circumstance alternative to SF6 gas.

• 전기학회논문지
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• 제56권1호
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• pp.151-155
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• 2007

A compact discharge plasma system with a photocatalyst has been proposed and investigated experimentally for application to air conditioners. It was found that there was intense ultra violet radiation with high energy of 3.2 eV from the corona discharge due to the DC-biased pulse voltage applied on a wire. An electrophotochemical reaction took place apparently on the surfaces of the photocatalyst of $TiO_2$ irradiated ultra violet front the discharge plasma in the proposed plasma system. The proposed discharge plasma system with the photocatalyst of $TiO_2$ showed very high removal efficiency of VOCs by tile additional electrophotochemical reactions on the photocatalyst. The proposed discharge plasma system also showed very high removal efficiency of particles such as smokes, suspended bacteria, and pollen and mite allergens by the electrostatic precipitation part. This type of corona discharge plasma system with a photocatalyst can be used as an effective means of removing both indoor pollutant gases and particles including suspended allergens.