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http://dx.doi.org/10.5695/JKISE.2010.43.3.154

Numerical Modeling of Plasma Characteristics of ICP System with a Pulsed dc Bias  

Joo, Jung-Hoon (Department of Materials Science and Engineering and Plasma Materials Research Center, Kunsan National University)
Publication Information
Journal of the Korean institute of surface engineering / v.43, no.3, 2010 , pp. 154-158 More about this Journal
Abstract
Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.
Keywords
Inductively coupled plasma; Uniformity; Fluid simulation; Pulse bias;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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