• 제목/요약/키워드: Pulse Plasma

검색결과 492건 처리시간 0.028초

Al:ZnO의 펄스 스퍼터 증착에서 주파수에 따른 플라즈마의 특성과 기판 온도 변화 (Plasma Characteristics and Substrate Temperature Change in Al:ZnO Pulse Sputter Deposition: Effects of Frequency)

  • 양원균;주정훈
    • 한국표면공학회지
    • /
    • 제40권5호
    • /
    • pp.209-213
    • /
    • 2007
  • Change of the plasma volume by pulse frequency in a bipolar pulsed DC unbalanced magnetron sputtering was investigated. As increasing the frequency at off duty 10% and at a constant power, the plasma volume was lengthened in vertical direction from the AZO target. When there is an electrically floated substrate, the vertical length of the plasma area was not affected by the pulse frequency. Instead, the diameter of the plasma volume was increased. We found that the temperature rise of a substrate was affected by the pulse frequency, too. As increasing it, the maximum temperature rise of a glass substrate was decreased from $132^{\circ}C\;to\;108^{\circ}C$.

Double Pulse Memory 방식을 이용한 DC Plasma Display Panel의 특성 연구 (Characteristics of DC Plasma Display Panel with Double Pulse Memory)

  • 최경철;신범재;왕기웅
    • 전자공학회논문지B
    • /
    • 제29B권1호
    • /
    • pp.67-75
    • /
    • 1992
  • A new method of driving the PDP(Plasma Display Panel) was proposed and its characteristics were investigated. Applying high frequency non-discharge pulses to an auxiliary anode resulted an increased region of stable operation, decreased delay time and increased light intensity. It is suggested that PDP with DPM (Double Pulse Memory) drive technique improves the delay time, luminance, region of stable operation and luminous efficacy compared to PDP with PPM(Planar Pulse Memory) drive technique developed by NHK Lab. in Japan.

  • PDF

대기압 플라즈마 발생시 인가전압의 상승시간에 따른 영향 (Effect of Rise Time of a Pulse Bias Voltage on Atmospheric Plasma Generation)

  • 김재혁;진상일;김영민
    • 전기학회논문지
    • /
    • 제57권7호
    • /
    • pp.1218-1222
    • /
    • 2008
  • We investigate the effect of rise time of a pulse bias voltage on atmospheric plasma generation. With the faster rise time of the pulse bias, the glow discharge appears to be more uniformly generated along the electrodes. I-V measurement confirms that higher loading power can be obtained using the faster rise time. A new understanding for atmospheric plasma generation at a micro-gap electrode is suggested.

서브마이크로 펄스 전압파형을 이용한 대기압 저온 마이크로 플라즈마 소스 개발 (The Development of Non-thermal Micro Plasma Source Under Atmospheric Pressure by Means of Submicrosecond Pulse Voltage Waveforms)

  • 최준영;이호준;김동현;이해준;박정후
    • 전기학회논문지
    • /
    • 제56권10호
    • /
    • pp.1802-1806
    • /
    • 2007
  • Nowadays, many configurations and applications of small atmospheric plasma source have been investigated with growing interest, as it provides the bacteria inactivation, the surface modification and removal of unwanted small regions, and so on. In this paper, the non-thermal micro plasma source under atmospheric pressure by means of submicrosecond pulse voltage waveforms is suggested. Plasma operates in helium is appears as a small (sub-mm) glow at the tip of a plasma gun. Electrical measurements show that the plasma source operates at low voltage (about 500V) and the power consumption is about 1W at 25kHz. Moreover, the emission spectrum shows the relatively higher emission intensity of oxygen particles than those of helium and nitrogen.

Al doped ZnO 박막 증착을 위한 모듈레이티드 펄스 스퍼터링 (Modulated Pulse Power Sputtering Technology for Deposition of Al Doped ZnO Thin Film)

  • 양원균;주정훈
    • 한국표면공학회지
    • /
    • 제45권2호
    • /
    • pp.53-60
    • /
    • 2012
  • Modulated Pulse Power (MPP) magnetron sputtering is a new high-power pulsed magnetron sputtering (HPPMS) technology which overcomes the low deposition rate problem by modulating the pulse voltage shape, amplitude, and the duration. Highly ionized magnetron sputtering can be performed without arcing because it can be controlled as multiple steps of micro pulses within one overall pulse period in the range of 500-3,000 ${\mu}s$. In this study, the various waveforms of discharge voltage and current for micro pulse sets of MPP were investigated to find the possibility of controlling the strongly ionized plasma mode. Enhanced ionization of the sputtered metal atoms was obtained by OES. Large grained columnar structure can be grown by the strongly ionized plasma mode in the AZO deposition using MPP. In the most highly ionized deposition condition, the preferred orientation of (002) plane decreased, and the resistivity, therefore, increased by the plasma damage.

SCM 435 강의 플라즈마 질화처리시 펄스 인자의 영향 (Influence of Pulse Parameters on the Plasma Nitriding of SCM435 Steels)

  • 송동원;이인섭
    • 한국재료학회지
    • /
    • 제11권12호
    • /
    • pp.1063-1067
    • /
    • 2001
  • The effect of the pulse parameters(pulse ratio and frequency) on the characteristics of the nitrided layer in the pulsed plasma nitrified SCM435 Steels was investigated. Material properties of the nitrided layer were analysed by employing optical microscope, scanning electron microscope(SEM), X-ray diffractometer(XRD) and micro-Vickers hardness tester. It was found that both the compound layer thickness and the surface hardness decreased with decreasing of pulse ratios. At high pulse ratio, the compound layer thickness and the surface hardness were rapidly decreased with decreasing frequency compared to lower pulse ratios.

  • PDF

펄스 모듈레이션된 고주파 플라즈마의 시변 특성 (Time variation characteristic of pulse-modulated high frequency plasma)

  • 이선홍;이대성;조용성;김동현;이호준;박정후
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2004년도 하계학술대회 논문집 C
    • /
    • pp.1817-1819
    • /
    • 2004
  • From the plasma application point of view, electron temperature and density are one of the most important parameters for plasma process. But it is only available to control plasma by adjusting external factors like gas pressure and input power. In this paper, pulse-modulated plasma is generated by modulating 13.56GHz RF power with 1, 5, 10kHz pulse. And Langmuir probe technique is used to study the distribution of electron temperature and density. When modulated pulse is off, electron temperature decreases gradually in form of exponential decay. The value t of exponential decay slope is 33.619, 13.834, 10.803 in 1kHz. 5kHz. 10kHz. This implies that this method can be used to control electron temperature and density.

  • PDF

Sustain 구간중 Address 전극에 인가되는 전압 펄스 폭에 따른 3차원 방전형상 분석 (The 3- dimensional analysis for the discharge of PDP according to the pulse width of voltage applied to the address electrode during sustain period)

  • 권형석;최훈영;이승걸;이석현
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2002년도 하계학술대회 논문집 C
    • /
    • pp.1830-1833
    • /
    • 2002
  • We measured 3-dimensional temporal behavior of the light emitted from AC plasma display panel(PDP) at various auxiliary voltage pulse width supplied to the address electrode in sustain period using scanned point detecting system. In the case of applying an auxiliary address voltage pulse, the light emission starts at the inner edges of the cathode so the larger discharge volume toward address electrode can be obtained compared with the normal sustain discharge. Especially, when the auxiliary voltage pulse width is the $2{\mu}s$, the maximum luminance and long emission time can be obtained.

  • PDF

Effect of Power Mode of Plasma Anodization on the Properties of formed Oxide Films on AZ91D Magnesium Alloy

  • Lee, Sung-Hyung;Yashiro, Hitoshi;Kure-Chu, Song-Zhu
    • 한국재료학회지
    • /
    • 제28권10호
    • /
    • pp.544-550
    • /
    • 2018
  • The passivation of AZ91D Mg alloys by plasma anodization requires deliberate choice of process parameters due to the presence of large amounts of structural defects. We study the dependence of pore formation, surface roughness and corrosion resistance on voltage by comparing the direct current (DC) mode and the pulse wave (pulse) mode in which anodization is performed. In the DC plasma anodization mode, the thickness of the electrolytic oxide film of the AZ91D alloy is uneven. In the pulse mode, the thickness is relatively uniform and the formed thin film has a three-layer structure. The pulse mode creates less roughness, uniform thickness and improved corrosion resistance. Thus, the change of power mode from DC to pulse at 150 V decreases the surface roughness (Ra) from $0.9{\mu}m$ to $0.1{\mu}m$ and increases the corrosion resistance in rating number (RN) from 5 to 9.5. Our study shows that an optimal oxide film can be obtained with a pulse voltage of 150 V, which produces an excellent coating on the AZ91D casting alloy.

Duplex Stainless Steel의 저온 플라즈마 침질탄화시 Pulse Frequency 및 Duty Factor에 따른 표면 특성평가 (The Influence of Pulse Frequency and Duty Factor on Surface Characteristics during Low Temperature Plasma Nitrocarburizing Treatment of Duplex Stainless Steel)

  • 천창석;이인섭
    • 한국표면공학회지
    • /
    • 제47권5호
    • /
    • pp.221-226
    • /
    • 2014
  • A low temperature plasma nitrocarburizng was implemented on the duplex stainless steel to achieve the enhancement of surface hardness without degradation of its corrosion resistance. Attempts were made to investigate the influence of Pulse frequency and Duty factor of pulsed power in a high Pulse frequency regime on the surface characteristics of the hardened layer. The hardened layer (S-phase) was formed on all of the treated surfaces. Surface hardness reached up to 1300 $HV_{0.1}$ which is about 4.6 times higher than that of the untreated material (280 $HV_{0.1}$). The thickness of the hardened layer tends to increase lightly with the higher Pulse frequency and the higher Duty factor. The corrosion resistance of nitrocarburized duplex stainless steel was almost similar to that of the untreated material. Both the Pulse frequency and the Duty factor do not have a significant influence on the corrosion property of plasma treated duplex stainless steel.