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Modulated Pulse Power Sputtering Technology for Deposition of Al Doped ZnO Thin Film

Al doped ZnO 박막 증착을 위한 모듈레이티드 펄스 스퍼터링

  • Yang, Won-Kyun (Department of Materials Science and Engineering and Plasma Materials Research Center, Kunsan National University) ;
  • Joo, Jung-Hoon (Department of Materials Science and Engineering and Plasma Materials Research Center, Kunsan National University)
  • 양원균 (군산대학교 공과대학 신소재공학과, 플라즈마 소재 응용 센터) ;
  • 주정훈 (군산대학교 공과대학 신소재공학과, 플라즈마 소재 응용 센터)
  • Received : 2012.04.26
  • Accepted : 2012.04.30
  • Published : 2012.04.30

Abstract

Modulated Pulse Power (MPP) magnetron sputtering is a new high-power pulsed magnetron sputtering (HPPMS) technology which overcomes the low deposition rate problem by modulating the pulse voltage shape, amplitude, and the duration. Highly ionized magnetron sputtering can be performed without arcing because it can be controlled as multiple steps of micro pulses within one overall pulse period in the range of 500-3,000 ${\mu}s$. In this study, the various waveforms of discharge voltage and current for micro pulse sets of MPP were investigated to find the possibility of controlling the strongly ionized plasma mode. Enhanced ionization of the sputtered metal atoms was obtained by OES. Large grained columnar structure can be grown by the strongly ionized plasma mode in the AZO deposition using MPP. In the most highly ionized deposition condition, the preferred orientation of (002) plane decreased, and the resistivity, therefore, increased by the plasma damage.

Keywords

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