• Food Science of Animal Resources
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• v.35 no.6
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• pp.800-806
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• 2015

We investigated the effects of a pulsed electric field (PEF) treatment on microbial inactivation and the physical properties of low-fat milk. Milk inoculated with Escherichia coli, Saccharomyces cerevisiae, or Lactobacillus brevis was supplied to a pilot-scale PEF treatment system at a flow rate of 30 L/h. Pulses with an electric field strength of 10 kV/cm and a pulse width of 30 µs were applied to the milk with total pulse energies of 50-250 kJ/L achieved by varying the pulse frequency. The inactivation curves of the test microorganisms were biphasic with an initial lag phase (or shoulder) followed by a phase of rapid inactivation. PEF treatments with a total pulse energy of 200 kJ/L resulted in a 4.5-log reduction in E. coli, a 4.4-log reduction in L. brevis, and a 6.0-log reduction in S. cerevisiae. Total pulse energies of 200 and 250 kJ/L resulted in greater than 5-log reductions in microbial counts in stored PEF-treated milk, and the growth of surviving microorganisms was slow during storage for 15 d at 4℃. PEF treatment did not change milk physical properties such as pH, color, or particle-size distribution (p<0.05). These results indicate that a relatively low electric-field strength of 10 kV/cm can be used to pasteurize low-fat milk.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.45-50
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• 2006

Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.6
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• pp.1-9
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• 2015

This paper introduces a zero-dimensional modeling on the plasma generation in electrothermal gun operation. The plasma generator consists of alumina bore and aluminum electrodes which is electrically powered by outer pulse forming network and, traditionally, its numerical simulations have employed time-dependent one-dimensional governing equations. However, by assuming isothermal approximation along the bore and choked bore exit condition, present analysis simplifies the mass and energy equations into zero-dimensional approximation of plasma conditions coupled with mass ablation model and plasma property evaluation. The numerical results show good agreement with the corresponding one-dimensional computations and thus verify the present modeling approach.

• Vacuum Magazine
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• v.4 no.1
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• pp.12-15
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• 2017

The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) is a 0.1 nm hard X-ray FEL which aims at providing photon flux higher than $1{\times}10^{12}$ photons/pulse using a 10-GeV electron linac. The vacuum system of the machine consists of an injector section including an S-band photocathode RF gun, 10-GeV electron linac section based on S-band normal conducting accelerating structures and a 150-m long out-vacuum undulator system. We introduce the present status of PAL-XFEL vacuum systems.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.285-286
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• 2014

Recently, the unipolar gate power source is preferred in inverter system because of cost reduction reason. In this case, designer uses 0V source for turning-off the switching devices instead of negative voltage at Vee source. If the gate driver circuit has some stray inductance, the gate voltage would happen a surge voltage. This paper analyzes that of stray inductance effect during the switching behavior in the circuit and the proposed solutions were verified by pulse test.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of Korean Society of Forest Science
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• v.85 no.3
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• pp.396-408
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• 1996

The purposes of this study were to standardise the forest working system to design the intensity of working system in felling operation of the thinning forest in our country as well as to contrive the improvement of working method and the increase of productivity. For the purpose of investigating these, element working was classified by felling operation in softwood thinning forest, and a pulse rate were measured and analyzed. The results were as follow : 1. From the analysis of the pulse frequence measurment, the average pulse showed 108 pulse per minute for worker A in the total of pure working time, 130 pulse per minutes for worker B, 119 pulse per minute for worker C and 125 pulse per minute for worker D, respectively. 2. From the results of the pulse frequence analysis according to element working classification, the highest pulse frequence represented 115 pulse per minute for worker A in the circumference, 131 pulse per minute for worker B in the movement, 122 pulse per minute for worker C in the limbing operation and 128 pulse per minute for work D in hang-up. 3. If the original pulse frequence was 100% for workers, the working intensity showed as follow : worker A was 160%(original pulse frequence was 61=100%) for the total of the working intensity and 188% for the circumference among element working. Worker B was 220%(original pulse frequence was 57=100%) for the total of the working intensity and 229 for movement among element working. Worker C was 159%(original pulse frequence was 73=100%) for the total of the working intensity and 168% for limbing operation among the element working. Worker D was 156%(original pulse frequence was 70=100%) for the total of working intensity and 182% for hang-up among element working. 4. At the limit point of Labor performance rating, showing the total of working intensity, overtime pulse rate per minute was 30 for worker A, 207 for worker B, 14 for worker C and 67 for worker D. Worker B was highest in working intensity, and got physically a big load.

• Journal of Acupuncture Research
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• v.25 no.4
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• pp.51-58
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• 2008

Objectives : Sypsun-points are located at the tips of all fingers, 0.1 chon(寸) from the finger nails, totaling 10 points on both hands. These points have been used for emergency care, fainting, epilepsy, cerebrovascular accidents, hypertension, unconsciousness, high fever etc. in oriental medicine. The most common technique is bleeding with a needle at these points. We investigated whether Venesection at the Sybsun-points has effects on blood pressure and body temperature and pulse rate in humans aged from 20 to 30 who had no specific past history and whose vital signs are in normal range. Methods : 67 persons were studied from March to June 2008. They were composed of Sample group(n=36) and Normal group(n=31). Both two groups kept a steady state an hour before venesection. In both group, we checked blood pressure and body temperature and pulse rates 6 times( 30min. before and just before treatment, and just after, 30, 60, 90min after treatment). All study environments were same between sample and normal group. But only, normal group didn't carry out venesection at the Sybsun-points. Results : In a comparison of before and after venesection at the Sybsun-points, any Statistical significance was not evaluated. Though pulse rate in sample group was significantly decreased after venesection(p<0.05), it has no statistical significance because normal group's pulse rate was also significantly decreased and between two groups had no statistical difference. Conclusions : Though further study is needed, our findings suggest that venesection at the Sybsun-points has no significant effect on blood pressure and body temperature, and pulse rate in humans who had no specific past history and whose vital signs are in normal range. Also in that case, we may know that pain and tension result from venesection at the Sybsun-points have no significant effect on blood pressure and body temperature and pulse rate.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.1
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• pp.69-77
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• 2005

To optimize and limit the axial length of the baffle of the KSR-III engine, stability rating tests using pulse gun as one of artificial disturbance devices have been done. Generally a rocket engine can be considered to be dynamically stable if a certain imposed external perturbation or pressure oscillation in rocket combustion chamber could be suppressed within a short time period. Decay time and other parameters for the evaluation of stabilization ability of an engine to external perturbation have been analyzed to quantify stabilization capacity of engine, in other words, dynamic stability margin. Baffle not covering flame zone enough which can be considered as collision region of injector wasn't be able to suppress external perturbation sufficiently. The limit of combustion stability margin of engine is assumed to be 50 mm length baffle of the KSR-III engine.

• Journal of IKEEE
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• v.15 no.2
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• pp.134-142
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• 2011

This paper describes a tripple-mode high-efficiency DC-DC buck converter. The DC-DC buck converter operate in PWM(Pulse Width Modulation) mode at moderate to heavy loads(100mA~500mA), in PFM(Pulse Frequency Modulation)at light loads(1mA~100mA), and in LDO(Low Drop Out) mode at the sleep mode(<1mA). In PFM mode DPSS(Dynamic Partial Shutdown Strategy) is also employed to increase the efficiency at light loads. The triple-mode converter can thus achieve high efficiencies over wide load current range. The proposed DC-DC converter is designed in a CMOS 0.18um technology. It has a maximum power efficiency of 96.4% and maximum output current of 500mA. The input and output voltages are 3.3V and 2.5V, respectively. The chip size is 1.15mm ${\times}$ 1.10mm including pads.