• Journal of Power Electronics
• /
• v.15 no.1
• /
• pp.10-17
• /
• 2015

A quasi-constant on-time controlled buck front end in combined discontinuous conduction mode and boundary conduction mode is proposed to improve power factor (PF).When instantaneous AC input voltage is lower than the output bus voltage per period, the buck converter turns into buck-boost converter with the addition of a level comparator to compare input voltage and output voltage. The gate drive voltage is provided by an additional oscillator during distortion time to eliminate the cross-over distortion of the input current. This high PF comes from the avoidance of the input current distortion, thereby enabling energy to be delivered constantly. This paper presents a series analysis of controlling techniques and efficiency, PF, and total harmonic distortion. A comparison in terms of efficiency and PF between the proposed converter and a previous work is performed. The specifications of the converter include the following: input AC voltage is from 90V to 264V, output DC voltage is 80V, and output power is 94W.This converter can achieve PF of 98.74% and efficiency of 97.21% in 220V AC input voltage process.

• Journal of Power Electronics
• /
• v.14 no.3
• /
• pp.488-498
• /
• 2014

This paper presents an implementation of selective harmonic elimination (SHE) modulation for a single-phase 13-level transistor-clamped H-bridge (TCHB) based cascaded multilevel inverter. To determine the optimum switching angle of the SHE equations, the Newton-Raphson method is used in solving the transcendental equation describing the fundamental and harmonic components. The proposed SHE scheme used the relationship between the angles and a sinusoidal reference waveform based on voltage-angle equal criteria. The proposed SHE scheme is evaluated through simulation and experimental results. The digital modulator based-SHE scheme using a field-programmable gate array (FPGA) is described and has been implemented on an Altera DE2 board. The proposed SHE is efficient in eliminating the $3^{rd}$, $5^{th}$, $7^{th}$, $9^{th}$ and $11^{th}$ order harmonics, which validates the analytical results. From the results, it can be seen that the adopted 13-level inverter produces a higher quality with a better harmonic profile and sinusoidal shape of the stepped output waveform.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.53 no.2
• /
• pp.65-69
• /
• 2004

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar-$SiH_4$ mixture gases($SiH_4$-0.5%, 2.5%, 5%) over the range of E/N = 0.01~300[Td], P = 0.1, 1, 5.0 [Torr] by Monte Carlo the backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. Electron swann parameters in argon were drastically changed by adding a small amount of mono-silane. The electron drift velocity in these mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tenn approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.82-85
• /
• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.8
• /
• pp.1407-1411
• /
• 2008

In material processing, a laser system with optimal laser parameters has been considered to be significant. Especially, the laser scribing technology is thought to be very important for fabricating DSSC(Dye sensitized solar eel!) modules with good quality. Moreover, the $TEM_{00}$ mode laser beam is the most dominant factor to decide the IPCE(Incident photon to current conversion efficiency) characteristics. In order to get the $TEM_{00}$ mode, a pin-hole is inserted within a simple pulsed Nd:YAG laser resonator. And the spatial field distribution is measured by using three size pin-hole diameters of 2.0, 6.0mm respectively. At that moment, each case has the same laser beam energy by adjusting the discharge voltage and pps(pulse per second). From those results, it is known that the pin-hole size of 2.0mm has the perfect $TEM_{00}$ mode. In addition, at the charging voltage of 1000V, 10pps and the feeding speed of 1.11mm/sec, the SEM photo of FTO(Fluorine-doped tin oxide) thin film layers shows the best scribing trace.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.19 no.8
• /
• pp.102-108
• /
• 2005

In this paper, authors propose novel boost AC-DC converter of high power factor and analyze for waveform and harmonics component of input current. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of at input voltage under the constant duty cycle switching. Therefore, input power factor is nearly unity. Particularly, the stored energy of loss-less snubber capacitor is recovered with input side and increases input current from resonant operation. The result is that input power factor of the proposed converter is higher than that of conventional converter of high power factor. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2009.05a
• /
• pp.384-387
• /
• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation (PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought must desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• Journal of Power Electronics
• /
• v.15 no.2
• /
• pp.309-318
• /
• 2015

This study proposes a dual-output single-stage bridgeless single-ended primary-inductor converter (DOSSBS) that can completely remove the front-end full-bridge alternating current-direct current rectifier to accomplish power factor correction for universal line input. Without the need for bridge diodes, the proposed converter has the advantages of low component count and simple structure, and can thus significantly reduce power loss. DOSSBS has two uncommon output ports to provide different voltage levels to loads, instead of using two separate power factor correctors or multi-stage configurations in a single stage. Therefore, this proposed converter is cost-effective and compact. A magnetically coupled inductor is introduced in DOSSBS to replace two separate inductors to decrease volume and cost. Energy stored in the leakage inductance of the coupled inductor can be completely recycled. In each line cycle, the two active switches in DOSSBS are operated in either high-frequency pulse-width modulation pattern or low-frequency rectifying mode for switching loss reduction. A prototype for dealing with an $85-265V_{rms}$ universal line is designed, analyzed, and built. Practical measurements demonstrate the feasibility and functionality of the proposed converter.

• Journal of Korean Society of Water and Wastewater
• /
• v.31 no.3
• /
• pp.257-262
• /
• 2017

Several disposal processes for waste sludge from wastewater treatment plants such as landfill, ocean dump, incineration, reuse as fuels or fertilizers are practiced. However, ocean dumping is prohibited by international treat. New constructions of landfill sites or incineration facilities are limited by NIMBY and reuse processes are still suffering from low energy yield. Therefore, development of alternative processes for sludge disposal are currently needed. In this study, alternative technique for sludge solubilization using HVI (high voltage impulse) was suggested and verified experimentally. Sludge solubilization was carried out for 90 minutes using HVI discharge with peak voltage of 16 kV and pulse duration for 40 microsecond. About 3~9 % of MLSS and MLVSS concentration were reduced, but the soluble COD, TN, TP of the sludge increased to 372 %, 56 % and 102 % respectively. It indicates that the flocs and/or cells of the sludge were damaged by HVI. These resulted in flocs-disintegration and cells-lysis, which means the internal matters were bursted out of the flocs as well as the cells. Thus, electrical conductivity in bulk solution was increased. All of the results verified that the HVI could be used as an alternative technique for sludge solubilization processes.

• Korean Journal of Materials Research
• /
• v.21 no.12
• /
• pp.703-707
• /
• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.