• Title/Summary/Keyword: Pt Thin Films

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Growth of Atomic Layer Deposition Platinum on TiO2 (이산화 티타늄 위에서의 원자층 증착법 백금의 성장 특성)

  • Kim, Hyun Gu;Lee, Han-Bo-Ram
    • Journal of the Korean institute of surface engineering
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    • v.48 no.2
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    • pp.38-42
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    • 2015
  • Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

Growth and electrical properties of $MgTiO_3$ thin films ($MgTiO_3$산화물 박막의 성장 및 전기적 특성 연구)

  • 강신충;임왕규;안순홍;노용한;이재찬
    • Journal of the Korean Vacuum Society
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    • v.9 no.3
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    • pp.227-232
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    • 2000
  • $MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

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Microstructure and Properties of $(Sr_{0.85}Ca_{0.15})TiO_3$ Thin Film with Annealing Temperature (열처리온도에 따른 $(Sr_{0.85}Ca_{0.15})TiO_3$박막의 구조 및 특성)

  • 김진사;조춘남;신철기;최운식;김충혁;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.10
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    • pp.802-807
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    • 2001
  • The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

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Fabrication and Properties of SCT Thin Film by RF Sputtering Method (RF 스퍼터링법에 의한 SCT 박막의 제조 및 특성)

  • 김진사;김충혁
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.436-440
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    • 2003
  • The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

Effects of Bottom Electrode to Dielectric and Electrical Properties of MOD Derived Ferroelectric SBT Thin Films (MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향)

  • 김태훈;송석표;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.694-699
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    • 2000
  • S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

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Magnetic Properties and Microstructures of Co-Cr-(Pt)-Ta Magnetic Thin Films Sputtered on Self-textured Substrates

  • Shin, Kyung-Ho;Chang, Han-Sung;Lee, Taek-Dong;Park, Joong-Keun
    • Electrical & Electronic Materials
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    • v.11 no.10
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    • pp.72-77
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    • 1998
  • The effects of Al micro-bumps on the magnetic properties of CoCr(Pt)Ta/Cr films deposited on glass substrates were investigated. The coercivity increased and the coercivity squareness decreased by incorporating Cr/Al underlayers. The cause of the coercivity increase is attributed to the reduction of Co(0002) texture, the increase of magnetic isolation of CoCr(Pt)/Ta grains, and the refinement of CoCr(Pt)/Ta grains deposited on Cr/Al underlayers. The effects of an Al overlayer on the magnetic properties of CoCr(Pt)Ta/Cr films were also studied. The decrease of coercivity squareness is ascribed to the magnetic isolation of CoCr(Pt)Ta grains.

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Fabrication of NiS Thin Films as Counter Electrodes for Dye-Sensitized Solar Cells using Atomic Layer Deposition

  • Jeong, Jin-Won;Kim, Eun-Taek;Park, Su-Yong;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.276.2-276.2
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    • 2016
  • Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from external circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of $90-200^{\circ}C$-could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

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Surface Morphology and Dielectric Properties of SBN Thin Film by RF Sputtering Method (RF 스퍼터링법에 의한 SBN 박막의 표면형상 및 유전특성)

  • Kim, Jin-Sa;Kim, Chung-Hyeok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.8
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    • pp.671-676
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

Formation of nickel oxide thin film and analysis of its electrical properties

  • Noh, Sang-Soo;Seo, Jeong-Hwan;Lee, Eung-Ahn;Lee, Seon-Gil;Park, Yong-Joon
    • Journal of Sensor Science and Technology
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    • v.14 no.1
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    • pp.52-55
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    • 2005
  • Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of $10.5{\mu}{\Omega}cm$ to $2.84{\times}10^{4}{\mu}{\Omega}cm$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of $0{\sim}150^{\circ}C$. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.

The electrical properties of SBT thin films according to various post-annealing of Pt bottom electrode (Pt 하부전극 후열처리 온도에 따른 SBT 박막의 전기적 특성평가)

  • Cha, Won-Hyo;Yoon, Ji-Eon;Lee, Chul-Su;Hwang, Dong-Hyun;Son, Young-Gook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.202-203
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    • 2007
  • Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.

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