• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.367-370
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• 2004

We fabricated PLT(5) thin film on $Pt/TiO_x/SiO_2/Si$ substrate by using sol-gel method and investigated leakage current, switching and retention properties. The leakage current density of PLT(5) thin film was $3.56{\times}10^{-7}A/cm^2$ at 4V. In the examination of switching properties, pulse voltage and load resistance were $2V{\~}5V$ and $50{\Omega}{\~}3.3k{\Omega}$, respectively. Switching time had a tendency to decrease from 520ns to 140ns with the increase of pulse voltage, and also the time was increased from 140ns to $13.7{\mu}s$ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time was about 143kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching was about $10\%$. Also, polarization in retention was decreased as much as about $8\%$ after $10^5$s.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.990-995
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• 1998

본 연구에서는 PZT(20/80)과 PZT(80/20) 금속 alkoxide용액을 Pt/Ti/$SiO_2$/Si 기판위에 상호 반복시킨 강유전성 PZT(20/80)/PZT(80/20) 이종층 박막을 제작하였다. 건조와 소결을 한번 행한 PZT 이종층 박막의 평균 두께는 약 80~90 nm이었다. 제작된 모든 PZT 박막은 rosette상이 없는 치밀하고 균질한 미세구조를 나타내었으며, 하부의 PZT층은 열처리시 상부 PZT층은 열처리시 상부 PZT 박막의 페로브스카이트 형성에 대해 nucleation site로 작용하였다. 유전상수, 피로특성 및 누설전류특성 등은 단일 조성의 PZT(20/80), PZT(80/20) 박막에 비해 우수한 특성을 나타내었다.

• 전기화학회지
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• 제13권1호
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• pp.10-18
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• 2010

Nanostructured metal oxides have been widely used in the research fields of photoelectrochemistry, photochemistry and opto-electronics. Dye-sensitized solar cell is a typical example because it is based on nanostructured $TiO_2$. Since the discovery of dye-sensitized solar cell in 1991, it has been considered as a promising photovoltaic solar cell because of low-cost, colorful and semitransparent characteristics. Unlike p-n junction type solar cell, dye-sensitized solar cell is photoelectrochemical type and is usually composed of the dye-adsorbed nanocrystalline metal oxide, the iodide/tri-iodide redox electrolyte and the Pt and/or carbon counter electrode. Among the studied issues to improve efficiency of dye-sensitized solar cell, nanoengineering technologies of metal oxide particle and film have been reviewed in terms of improving optical property, electron transport and electron life time.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 추계학술대회 논문집
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• pp.403-405
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• 2009

본 연구에서는 염료태양전지의 제작 시 고가의 TCO전극을 사용하지 않고 간단히 광전극을 대체할 수 있는 방법으로 메쉬전극을 이용하는 TCO-less 염료태양전지를 제작하였다. 메쉬전극을 이용한 TCO-less 염료태양전지의 구조는 "Glass / 메쉬전극($TiO_2$를 딥코팅 한 후 염료를 흡착시킴) / 전해질 / 멤브레인 필터 / 상대전극(Pt-coated TCO) / Glass" 로 구성된다. 제작된 샘플의 광전변환 효율은 약 1.5% 였으며 fill factor는 0.55로 나타났다. 향후 계획으로 효율을 향상 시킬 수 있는 방법을 도입하여 광전류밀도와 fill factor를 개선하는 연구를 진행할 예정이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.140-143
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• 2005

Carbon Nanotube(CNTs) counter electrode is a promising alternative to Platinum counter electrode for dye sensitized solar cells (DSSCs). In this study, CNT counter electrodes having different visible light transmittance were prepared on fluorine-doped tin oxide (FTO) glass surface by spray coating method. Microstructural images show that there are CNT-tangled region coated on FTO glass counter electrodes. Using such CNT counter electrodes and screen printed $TiO_2$ electrodes, DSSCs were assembled and its I-V characteristics have been studied and compared. Light energy conversion efficiency of DSSCs increased with decreasing in light transmittance of CNT counter electrode. Efficiency of DSSCs having CNT counter electrode is compatible to that of Pt counter electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.691-694
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• 2004

염료감응형 태양전지는 다공질 $TiO_2$ 전극막, 광감응형 염료, 전해질, 상대전극으로 구성된, 전기화학적 원리를 응용한 신형태양전지이다. 염료감응형 태양전지의 상대전극으로 주로 Pt가 사용되고 있는데 본 연구에서는 탄소나노튜브를 사용하여 상대전극으로서의 가능성을 조사하였다. 제조된 탄소나노튜브 상대전극은 cyclic voltammetry와 Impedance spectroscopy을 이용하여 전기화학적 특성을 측정하였다. 또한 탄소 나노튜브 상대 전극이 태양전지의 효율 및 그 특성에 미치는 영향을 알아보기 위하여 단위 셀 태양전지를 제조하여 단파장 하에서의 광전특성을 측정하고, 이를 바탕으로 탄소나노튜브의 상대전극으로서의 가능성을 제시하였다.