한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Sol-Gel법으로 제작한 PZT(10/90)/PZT(90/10)이종층 박막의 구조 및 유전특성

Structural and Dielectric Properties of PZT(10/90)/PZT(90/10) Heterolayered Thin Films Prepared by Sol-Gel Method

  • 김경태 (광운대학교 전자재료공학과) ;
  • 정장호 (광운대학교 전자재료공학과) ;
  • 박인길 (신성대학 전자과) ;
  • 이성갑 (서남대학교 전자전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 1998.11.01
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초록

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

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