• 제목/요약/키워드: Protective device

검색결과 272건 처리시간 0.027초

반도체 소자를 이용한 테슬라 코일의 설계 및 제작 (A Study on Design and Implementation of the Tesla Coil using Semiconductor Device)

  • 김영선;김동진;이기식
    • 전기학회논문지
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    • 제65권9호
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    • pp.1571-1576
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    • 2016
  • A Tesla coil is an electrical resonant transformer circuit invented by Nikola Tesla in 1891. It is used to produce high-voltage, low-current, high frequency alternating-current electricity. Tesla coil can generate a long streamer with several million volts of electricity as a high voltage device. It is basically consists of a voltage transformer, high voltage capacitor, spark gap, primary coil, secondary coil and toroid. It is difficult to appear in the output size of the streamer is controlled by the spark gap. The general decision method of the length of streamer is to display the electric output in accordance with the design specifications in initial development plan. Design specifications and the electric output is determined by the application of facilities. In this paper the spark gap is replaced with periodic switching semiconductor device to control output voltage easily in order to apply overvoltage protective circuit due to a secondary coil and a performance test. In these days, their main use is for entertainment and educational displays of the museum, although small coils are still used as leak detectors for high vacuum systems.

고정밀 전류센서를 이용한 이중 차단용 전기화재 방재장치에 관한 연구 (A Study on Electrical Fire Disaster Prevention Device used in Double Circuit Break)

  • 박동필;곽동걸;정도영;김춘삼;신호준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.2102-2103
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    • 2008
  • The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The occurrence factor of the fire is electric arc or spark accompanied with electrical faults. Residual Current Protective Device(RCD) of high sensitivity type used at low voltage wiring cuts off earth leakage and overload, but the RCD can't cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied low voltage distribution panel are prescribed to rated breaking time about 30[ms](KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To be improved on such problem, this paper is proposed to a electrical fire disaster prevention device(EFDPD) for a RCD trip or a self circuit-breaking function on electric arc or spark due to electrical fire. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.

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비선형 부하에 적용이 가능한 IED에 관한 연구 (A Study on the Intelligent Electronic Device for Non-Linear Loads)

  • 박종찬;김병진;김수곤;전희종
    • 전력전자학회논문지
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    • 제8권5호
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    • pp.381-388
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    • 2003
  • 본 논문에서는 IED(Intelligent Electronic Devices)에서의 고조파 문제를 연구하였다. 최근 전력전자 기술의 급격한 발전으로 비선형부하에 의한 전력 품질의 왜곡이 심각해지고 있다. 연속적인 고조파 전류는 전련기기의 수명을 단축시키고 발열 문제가 발생하며 비정상적인 동작을 유발한다. 이러한 문제를 해결하기 위한 디지털 보호계전 시스템에서 전통적인 방법으로 전력을 계측하면 고조파의 영향을 고려할 수 없다. 이러한 문제를 해결하기 위하여 본 연구에서는 TMS320C32 DSP와 CPLD를 이용한 IED prototype을 구현하여 실험을 통해 성능을 확인하였다.

[ 0.1\;μm ] SOI-MOSFET의 적정 채널도핑농도에 관한 시뮬레이션 연구 (Investigation of Optimal Channel Doping Concentration for 0.1\;μm SOI-MOSFET by Process and Device Simulation)

  • 최광수
    • 한국재료학회지
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    • 제18권5호
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    • pp.272-276
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    • 2008
  • In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

저압 배전선로의 누전 및 배선용 차단기의 오동작 방지를 위한 고속형 전기안전 보호장치 (Electric Safety Protection Device of High Speed for Incapable Operation of ELB and MCCB Using the Low Voltage Distribution Line)

  • 곽동걸;정도영
    • 전기학회논문지
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    • 제56권11호
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    • pp.1925-1929
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    • 2007
  • This paper is studied on a novel Electric Safety Protection Device (ESPD) of high speed for incapable operation of Earth Leakage Circuit Breaker (ELB) and Molded_case Circuit Breaker (MCCB) using the low voltage distribution line. The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The occurrence factor of the fire is electric arc or spark accompanied with electrical faults. Residual Current Protective Device (RCD), that is ELB and MCCB, of high sensitivity type used at low voltage wiring cuts off earth leakage and overload, but the RCD can't cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied low voltage distribution panel are prescribed to rated breaking time about 30[ms] (KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To be improved on such problem, this research development is proposed to a novel ESPD of high speed to trip of distribution line on electric arc or spark due to electrical fire. Some experimental results of the proposed ESPD are confirmed to the validity of the analytical results.

우주발사체에 적용되는 지상 엄브리칼 체결장치의 구성과 기능

  • 김용욱;김대래;이정호;오승협
    • 천문학회보
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    • 제37권2호
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    • pp.151.1-151.1
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    • 2012
  • 우주발사체와 발사지원설비를 연결하여 추진제 공급과 전기신호 송수신 등을 가능하게 하는 메커니즘을 엄브리칼 장치라고 한다. 국내 우주발사체의 경우 액체산소와 케로신을 추진제로 사용하며, 질소, 공기 및 헬륨 등의 가스를 밸브구동, 공간 퍼지, 추진제 가압에 이용한다. 본 논문에서는 우주센터의 발사대설비에 적용된 엄브리칼 장치 중 추진제 및 고압가스 공급을 위한 자동체결장치(auto coupling device)의 구성, 기능 및 발사 준비를 위한 프로세스에 대해 기술하고 있다. 자동체결장치는 발사체 하부 두 곳에 연결되며, 산화제 공급측의 체결장치(coupling device 1)와 연료 공급측의 체결장치(CD 2)로 구성된다. 이 장치는 발사체와의 접촉면에서 기밀을 확보한 상태에서 내부의 탱크, 밸브, 인터스테이지 등에 추진제 및 각종 가스를 공급하는 통로역할을 하며, 발사준비가 완료된 후에는 발사체 이륙 전 또는 이륙과 동시에 발사체로부터 자동으로 분리된다. 각각의 체결장치 구성품으로는 발사체 이륙시 발생하는 고온의 화염으로부터 장치를 보호하는 PD(protective device), 접촉면에 기밀을 제공하고 추진제 누출을 방지는 MCP(multi-channel plate), 접촉면을 보호하기 위한 덮게, 각종 연결 배관의 전진과 후진을 위한 캐리지, 발사체와의 체결을 지지하는 그립 등이 있다. 발사 준비를 위해서 사전에 장치의 독립운용시험을 통해 각 구성품의 상태와 기능을 점검하고 장치의 작동성을 검증한다. 이후 발사체를 모사하는 기체 및 관제설비와 종합적으로 연계 시험과 모사시험을 수행하여 최종적으로 발사준비상태를 확인하게 된다. 이러한 자동체결장치의 운용 경험은 한국형발사체의 지상지원설비 개발에 활용할 수 있을 것이다.

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바우 스러스터 터널 그리드 개선을 위한 연구 (A Development of New Device for Bow Thruster Tunnel Grids)

  • 김성표;박제준;전동수;김용수;이춘주
    • 대한조선학회논문집
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    • 제43권3호
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    • pp.304-312
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    • 2006
  • For protection of the thruster against mechanical damage and reduction of tunnel resistance at ship forward speed, the tunnel grids are normally installed. Some of ship operators however, have a strong distrust of the protective function of the tunnel grids and so they do not want to install the protective grids for higher thruster efficiency. Since the grids should be installed at very close to the side shell as far as possible in due consideration of flow direction to minimize additional resistance induced by tunnel openings, it has been too hard and time consuming work to install the grids on the curved and chamfered tunnel entrances considering its relatively low resistance reduction effect. DSME (Daewoo Shipbuilding & Marine Engineering Co., Ltd) developed a substituting device named TG (Tunnel Guides) for bow thruster tunnel grids which is characterized by higher resistance reduction, higher thruster efficiency and easy to installation. This paper provides the principle idea of the TG with short history of the development using CFD calculations and model experiments in MOERI (former KRISO).

비평의 본질로서의 예술성과 비평의 제문제 (Criticism as a Protective Device of Art)

  • 김춘희
    • 인문언어
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    • 제1권2호
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    • pp.141-158
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    • 2001
  • Criticism of today finds itself in an awkward situation, for it is now being transformed in the same way that literature and the arts were transformed by the avant-garde movements at the end of the 19th century and the beginning of the 20th century. It is characterized predominantly by a break with harmony and with the values of realism. As such, it is driven by a post-modem ethos, an artistic, social, and cultural phenomenon that veers toward open, fragmentary, and indeterminate forms. In this paper, I examine today's most urgent social and cultural issues with reference to artistic production and criticism, in order to illuminate the true nature of criticism. The outstanding questions in the world of art criticism are given in five categories: the lack of critical reality in argumentative criticism; the problem of artistic and literary production in global capitalism; the artistic mind and its consciousness of socio-historical ideology; anxiety of the rise of cyberjournalistic criticism; and the question of subordination to western systems in the field of interpretation and criticism. For my analysis, I have tried to formulate a three-dimensional critique structure that will help us organize the relationships between the points of argument: 1) criticism as a creative force behind the artist; 2) criticism as critique of artistic production; and 3) criticism as critique of other critics. This multi-layered structure will be appropriate to our task of interpretation and evaluation, as the proposed complex structure of criticism will be able to embrace the diverse aspects of our problematic argument. In the final analysis, my argument resolves itself into a question of art, more specifically into a question of criticism as a protective device of art in an age threatened by globalization and cultural monopolization.

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RCD와 SPD의 접속 위치에 따른 보호협조 (Protection Coordination Associated with Connection Location of Residual Current Devices and Surge Protective Devices)

  • 이복희;박희열;신건진;배관영;류춘형;이강희
    • 조명전기설비학회논문지
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    • 제27권3호
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    • pp.100-106
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    • 2013
  • In this paper, in order to analyze lightning impulse response characteristics in combined installations of SPDs and RCDs, surge protection coordination between SPDs and RCDs are experimentally investigated by using the combination wave generator. Six different types of single-phase residual current operated circuit-breakers with integral overcurrent protection for household and similar uses(RCBOs) being present on the domestic market are tested according to KS C IEC 61009-1 standard. As a result, when a class I SPD is located on the source side of an RCBO, all kinds of specimens are able to provide the proper coordination between the SPD and RCBOs without nuisance tripping, unintended operation or damage due to test impulse currents. However, in the case that the class II SPD is located on the load side of RCBOs, a lot of L-N mode injected currents is split into the RCBO, and a few RCBOs are damaged. Coordination between SPDs and RCDs is not valid and a role of SPDs is of no use. When combining SPDs with RCDs, it is necessary to select SPDs and RCDs in consideration of the protection voltage level of metal oxide varistor embedded in RCDs.

OLED 내구성에 미치는 무기/에폭시층 보호막의 영향 (The Effect of Passivation Film with Inorganic/Epoxy Layers on Life Time Characteristics of OLED Device)

  • 임정아;주성후;양재웅
    • 한국표면공학회지
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    • 제42권6호
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    • pp.287-293
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    • 2009
  • The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.