• 전기전자학회논문지
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• 제27권3호
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• pp.258-264
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• 2023

본 논문에서는 부하전류에 따라 LDO(Low Drop Out) 레귤레이터의 효과적인 동작과 파괴 방지를 위해 ESD(Electro Static Discharge) 보호회로를 내장한 LDO 레귤레이터를 제안한다. 제안하는 LDO 레귤레이터는 additional feedback current 회로구조를 이용하여 LDO 레귤레이터의 출력전압에 따라 더욱 효과적으로 패스 트랜지스터의 게이트 노드 전압을 조절할 수 있다. 또한 기존의 ESD 보호소자에 P+ bridge를 추가하여 SCR 루프 상의 전류 이득을 감소시켜 홀딩 전압을 약 2V 가량 높인 새로운 구조를 내장하여 ESD 상황에 대해 높은 신뢰성을 가질 것으로 예상된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.2088-2090
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• 1998

A low-cost electronic starter is developed to decrease ignition failure significantly through successive starting trial and to prevent overheating at the end of fluorescent lamp life. Moreover, it has an additional feature of being capable of ignition at the recovered lamp voltage without any circuit correction. The developed electronic starter is consisted of four parts - a half wave rectifier circuit, a timer circuit, a switching circuit and a protection circuit. The protection circuit made up of a transistor and capacitors utilizing capacitive characteristics, carries out successive starting trial and end-of-life protection. Lamp ignition is completed within 0.5 seconds with taking advantage of a high preheating current from the half-wave rectifier circuit. Nevertheless, its performance is proved to be very excellent through a standard switching endurance test.

• 조명전기설비학회논문지
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• 제28권12호
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• pp.6-12
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• 2014

The safety and reliability of the power system short-circuit current, the short-circuit current depends on the failure to obtain the objective is to quickly eliminate the breaking capacity of the circuit-breaker selection of the cable, the insulation of electrical equipment and protective relay an important factor in determining the level correction and protective relay selection scheme to be meaningful. Standards used in the domestic circuit breaker is applied to the production of IEC standard, but the American National Standards (ANSI / IEEE) by NEMA specification of the fault current calculations and the application of the asymmetric coefficient Korea. Therefore, in this paper, the IEC 60909 standard IEC breaker fault current calculation method and the method for selection of system configurations reviewed and protection system for reviewing the configuration of various protective relays appropriate correction and the correction value is main protection, back-up protection the equipment so that the period of protection relay coordination to minimize accidents and accident protection to minimize interruptions proposed for cooperation.

• Journal of Power Electronics
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• 제2권2호
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• pp.88-94
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• 2002

The demand for protection of power electronic application has during the last couple of vears increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight inductance over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection of adding inductance of existing High-speed and new Typower Fuse protection. First, the problem of adding inductance of exiting High-speed and new Typower Fuse DC-link circuit is treated, second a short discussion of protection of the IGBT module is done, and finally, the impect of the high frwquency loading on the currying capability of the fuses is presented.

• 전기전자학회논문지
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• 제19권2호
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• pp.265-270
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• 2015

본 논문에서는 높은 홀딩 전압을 갖는 SCR(silicon-controlled rectifier)기반 양 방향성 ESD 보호회로를 제안하였다. 일반적인 ESD 보호회로와 달리 양방향의 ESD Stress mode의 방전경로를 제공하며 높은 홀딩전압으로 latch-up면역 특성을 갖어 효과적인 ESD보호를 제공한다. 또한, 높은 홀딩전압을 위한 설계변수인 Gate Length와 N+bridge Length의 길이 변화에 따른 시뮬레이션을 Synopsys사의 TCAD 시뮬레이터를 사용하여 확인 하였다. 시뮬레이션 결과 2.1V에서 6.5V까지 홀딩 전압의 증가로 latch-up 면역 특성을 개선 하였으며, 기존 SCR보다 6.5V의 낮은 트리거 전압특성을 갖고 있어 제안된 ESD 보호 회로는 5V 이상의 공급전압을 갖는 application에 적용 가능하다.

• 한국군사과학기술학회지
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• 제21권5호
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• pp.665-674
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• 2018

In this paper, we propose a development results of a D-type non-rechargeable lithium battery($Li/SOCl_2$) on improvement in a low cost protection circuit of discharge for domestic military power source. According to this study, we describe a new design and product with 8-bit microcontroller in the protection circuit which can estimate state of health of the battery regardless of occurring an initial voltage delay. Also this paper discuss and facilitate development as solution to a safety about the non-rechargeable lithium batteries. As a result, we verified a quality of the protection circuit by a development test and evaluation(DT&E) process.

• 전기전자학회논문지
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• 제28권2호
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• pp.204-208
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• 2024

본 논문에서는 ESD 보호회로의 전류구동 특성을 향상시키기 위해 일반적인 저전압용 ESD 보호회로인 LVTSCR의 구조적 변경을 적용한 ESD 보호회로를 제안한다. LVTSCR 구조에서의 electric field와 ESD 전류 경로가 형성 되는 영역을 분리하여 전력 소모를 최소화 하였으며 이에 대한 전기적 특성을 분석하고 전류 구동 특성을 개선하였다. 시뮬레이션을 통한 System-level 특성 저하에 기인하는 구조적인 문제를 분석하였으며 이를 반영하여 특성을 검증하였다. 제안된 ESD 보호회로의 전기적 특성은 TCAD 시뮬레이션을 통해 검증하였으며 HBM 모델링 및 System-level 모델링을 통해 분석하였다. 또한, DB-Hitek사의 0.18um BCD 공정을 통해 silicon 제작 및 HBM 10kV 특성 검증하였다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2001년도 학술대회 논문집
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• pp.80-83
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• 2001

We studied on effective quench protection method to prevent damage from unexpected quench of superconducting magnet for magnetic resonance imaging. And we suggested quench protection circuit that is combined with several protection techniques. This circuit has the capacity to maintain the symmetric nature of the magnetic field and the active shielding effect and to protect shim coils during a quench.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.703-707
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• 2001

The demand for protection of power electronic applications has during the last couple of years increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight increase the over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection. First, the problem of adding inductance of existing High-Speed and new Typower fuses in DC-link circuit is treated, second a short discussion of the protection of the IGBT module is done, and finally, the impact of the high frequency loading on the current carrying capability of the fuses is presented.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 D
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• pp.3019-3021
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• 2005

In this paper we suggest a novel temperature detection method utilized in direct over-temperature protection circuit modeling. The suggested model detects temperature variation using Rds(on) characteristics of MOSFET, while the conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. The temperature-dependant MOSFET model is implemented using Spice ABM(Spice Analog Behavior Model). The direct over-temperature protection circuit was designed including it. We verified effectiveness of the temperature dependant Rds(on) model characteristics and performance of the direct over-temperature protection circuit on PSpice simulation